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|  | | 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。 | |
High-intensity PL was observed at a temperature of 80 K, with a peak half-width of 30-50 meV and a peak wavelength in the range from 2 to 4.5 μm, depending on the QW width, which varied between 4 and 20 nm, respectively.
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It is shown that σ and EU, quantities representing the scale of the exciton-localization effects, vary linearly with the photoluminescence-peak wavelength in the range from the ultraviolet to the green region of the spectrum.
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Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.
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At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW.
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For Na8 a single broad resonance is observed, the peak wavelength is in excellent agreement with the model.
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| | The experimental study about parameter h was reported. The measurement results using broadband source and narrowband source were compared. A device for parameter h measuring with a lamp was proposed. It can work in wavelength from 0.4μm to 1.8μm. The bandwidth can be adjusted from 10nm to 70 nm. The results were accurate and reliable. | | 对保偏参数h的测量进行了实验研究。对宽带光源与窄带光源的测量结果进行对比分析后,提出一种使用高精度白光源的h参数测量装置。用此装置可以在0.4μm到1.8μm波长范围的中心波长连续可调测量,谱带宽度可以在10nm到70nm间连续可调。获得的测量结果准确可靠。 | | 文摘来源 | | WT5BZ]Al xGa 1-x As Bragg reflector was designed and researched in order to increase the absorbability of photon near the GaAs band gap. According to the character of absorption of solar spectrum, the theoretical calculation and design of Al xGa 1-x As Bragg reflector with the peak wavelength of 850 nm was made by means of moving the matrix. The Bragg reflector with the peak wavelength of 850 nm was grown epitaxially on the Ge ... | | 为提高GaAs/Ge太阳电池对光的吸收 ,我们对Ge衬底Bragg反射器进行了研究。根据GaAs材料对太阳光谱的吸收特点 ,通过转移矩阵的方法 ,对中心波长为 85 0nm的AlxGa1-xAs系材料Bragg反射器进行了光反射的理论计算和设计。依据理论设计 ,利用低压金属有机化合物化学气相沉积 (LP MOCVD)技术在Ge衬底上外延生长中心波长为 85 0nm的Bragg结构 ,测得的反射谱与理论设计相吻合 ,X Ray双晶衍射测得的Bragg周期厚度为 1 1 0nm。制作出具有埋层Bragg结构的GaAs/Ge太阳电池。对整个电池吸收系数的测试结果表明具有埋层Bragg结构的太阳电池的吸收系数低于无Bragg结构的电池。AM 1 .5光谱下电池I V曲线测试结果为 :Voc=1 .0 33V ,Jsc=2 6 .0 4mA/cm2 ,FF =82 .5 2 % ,η =2 2 .2 % ,对电池性能作了初步研究 | | 文摘来源 | | The experimental results using two different configuration on high-power Yb-doped double-cladding fiber superfluorescent source (SFS) pumped by 975 nm laser diode are reported. In single-pass forward (SPF) and single-pass backward (SPB) design, the maximum superfluorescent output power is 1.46W and 1.82W, while the slope efficiency is 23.4% and 29.2% respectively. In double-pass forward (DPF) configuration using the dichroic mirror as the front cavity mirror, the maximum superfluorescent output power is 2.1... | | 采用大功率半导体激光器抽运25m掺Yb双包层光纤,在单程装置中,前向(SPF)和后向(SPB)分别获得了1.46W和1.82W最大超荧光功率,斜度效率分别为23.4%和29.2%,3dB带宽最大为11nm。采用特定范围波长双色镜作为前腔镜,形成双程前向(DPF)装置,获得最大超荧光输出功率2.12W,此时斜度效率为43.2%,中心波长在1070nm,输出光谱平坦性较好,3dB带宽从单程的11nm提高到42nm。 | | 文摘来源 | |   | | << 更多相关文摘 |
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