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   降低生长 的翻译结果: 查询用时:0.021秒
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降低生长
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  “降低生长”译为未确定词的双语例句
     Whereas, when higher wheat ratio (about 73%)in diets, performance and nutrient digestibility in growing pigs were decreased significantly (p<0.05), and growth of beneficial microbe was also inhibited significantly (p<0.05).
     相反,日粮中小麦占谷物组成的比例过高(达73%)则会降低生长猪的日增重(p<0 .05)和营养物质的消化率(p<0.05),提高料重比(P<0.05)和pH值(P<0.05),抑制有益微生物的生长(P<0.05);
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     The results show that the overpotential and resistivity both first decrease and then increase with increase of the sputtering pressure,which changed from 0.5Pa to 4.0Pa.
     实验结果显示在溅射气压从0.5Pa到4.0Pa的范围内变化时,随溅射气压升高,材料晶化率降低,生长速率下降,过电位和电阻率都是先减小再增大;
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     In the treatments of VF and CC,the T/R ratio decreased significantly,and the contents of cytokinin(CTKs),indole-3-acetic acid(IAA) and gibberellic acid(GA4) in the leaves increased by some extents,and the contents of CTKs,IAA,ABA in the tuber roots also increased and their peaks appeared early about 3-4 weeks.
     脱毒和氯化胆碱浸根处理可显著降低生长前、中期的T/R值,不同程度地提高功能叶叶片的IAA含量、CTKs含量和GA4含量,提高膨大高峰期块根的CTKs含量、ABA含量和IAA含量,并使高峰期提早出现3~4周;
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     In_(1-x)Ga_xAs(x(?) 0.47) epilayers grown by LPE with gradual deduction in the star-ting growth temperature T_σ have been investigated by use of Electron Probe MicroZone Analysis and Cathodoluminescence.
     用电子探针微区分析和阴极荧光研究了LPE生长In_(1-x)Ga_xAs(x~0.47)时用逐次降低生长起始温度T_g的方法生长的外延片.
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     RESULTS Different dosage of Compound Rhubarb Mixture can improve gastrointestinal peristalasis of mice and increase the levels of motilin, subtance P, with reduce the content of somatostatin in small intestine of mice significantly.
     结果 复方大黄合剂各剂量均能促进小鼠的胃肠蠕动功能 ,与正常对照组相比有显著差异 ; 复方大黄合剂各剂量均能显著提高小鼠小肠组织胃动素、P物质的含量 ,而降低生长抑素的水平。
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     Growth promoters tended to decrease the globulin and urea N of serum.
     生长促进剂有降低血清球蛋白和尿素N的趋势。
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     As the temperature decreased,the weight of CaOxa crystals also decreased since the diffusion rate decreased.
     随着温度降低,CaOxa的生长速度减小.
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     the blood sugar decreased.
     血糖降低
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     The ratio of renal flow volume to cardiac output was also decreased.
     心输出量降低 ;
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     growth of diameter ,height and volume;
     材积生长
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  degrowth
Locomotory strategies in freshwater triclads and their effects on the energetics of degrowth
      
Littoral snails had a more pronounced tissue degrowth during winter.
      
Quantitative analysis of cell types during growth, degrowth and regeneration in the planarians Dugesia mediterranea and Dugesia
      
These mAb's should be important tools in study of tissue and cell morphology, regeneration, and growth and degrowth.
      
This change from growth to degrowth and utilization of endogenous glycogen reserves correlated with a change in the thickness of the microxic layer (>amp;lt;0.2 mg O2 1-1) above the sediment surface.
      
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A preliminary field experiment on the highly leached soil in north Zhan- jiang Prefecture showed that application of N fertilizer significantly enhan- ced the growth of immature rubber trees, but reduced the uptake of Mg and aggravated Mg deficiency remarkably. Mg fertilizer caused a significant dec- rease in Mg deficiency, enhancing Mg content in leaves and speeding up the growth of rubber trees significantly. The significant increase in growth was brought about by application of P in combination with N but...

A preliminary field experiment on the highly leached soil in north Zhan- jiang Prefecture showed that application of N fertilizer significantly enhan- ced the growth of immature rubber trees, but reduced the uptake of Mg and aggravated Mg deficiency remarkably. Mg fertilizer caused a significant dec- rease in Mg deficiency, enhancing Mg content in leaves and speeding up the growth of rubber trees significantly. The significant increase in growth was brought about by application of P in combination with N but no effect was shown on the uptaking of nutrients. Application of K hindered the uptake of Mg and aggravated the symptoms of Mg deficiency, thus retarding the growth a bit during the initial two years.The effect of K fertilizer applied on rubber growth changed from negative to positive in the third year because Mg fertilizer had been applied in combination with K fertilizer for three years.

在高度淋溶的湛江北部丘陵红壤上,大田初步试验显示:施用氮肥对橡胶幼树的生长有极显著的促进作用,但会提高叶片的氮/镁值,极显著地加剧镁缺乏症。镁肥能极显著地减轻镁缺乏症,提高叶片的镁含量并显著增加胶树生长量。磷肥与氮、镁肥配合能显著提高胶树的生长量,对养分吸收则看不出效应。钾肥会妨碍胶树对镁素的吸收,提高钾/镁值,加重镁缺乏症,从而略为降低生长量。但钾肥是与镁肥配合使用的,第三年镁素营养已得到满足,钾肥对胶树的生长效应就由负变正。

In_(1-x)Ga_xAs(x(?)0.47) epilayers grown by LPE with gradual deduction in the star-ting growth temperature T_σ have been investigated by use of Electron Probe MicroZone Analysis and Cathodoluminescence.The results Show that with this method thegrowth solution can be used many a time repeatedly,and that epilayers with good re-peatability can be obtained.

用电子探针微区分析和阴极荧光研究了LPE生长In_(1-x)Ga_xAs(x~0.47)时用逐次降低生长起始温度T_g的方法生长的外延片.结果表明,采用这种方法可以多次使用生长溶液,得到组分一致性比较好的In_(1-x)Ga_xAs(x~0.47)外延片.

GaSb single crystals witn large diameter (D>25mm) and low dislocation demsity (<10cm~(-2)) grown by a horizontial method are reported forthe first time Novel procedures for suppressing dislocation, such as controlling she shape of interface, expelling the factor of occurrence twin, melting-back of seed, have been diseribed in detial. By zone refining the ingots for 2-3 tirues prior to the growth, crystals can be successfully grown at a low temperature gradient (AT=4℃/cm). It is the most important for the reduction...

GaSb single crystals witn large diameter (D>25mm) and low dislocation demsity (<10cm~(-2)) grown by a horizontial method are reported forthe first time Novel procedures for suppressing dislocation, such as controlling she shape of interface, expelling the factor of occurrence twin, melting-back of seed, have been diseribed in detial. By zone refining the ingots for 2-3 tirues prior to the growth, crystals can be successfully grown at a low temperature gradient (AT=4℃/cm). It is the most important for the reduction of axial thermal stress which allways generate a high density dislocation at the growth interface, in particular to GaSh. Chemical EPD observation and X-ray diffraction rocking curves show that there is a higher dislocation density on the wafers cut from the end of the crystal ingots. The generation of those defects is also discussed.

本文首次报导水平法生长大直径(D≥25mm)低位错密度(<10cm~(-2))的高完整性GaSb单晶。详细地叙述了控制界面形状,消除产生孪晶的因素,回熔缩颈等有关生长工艺。讨论了在不出现组分过冷的前提下尽量降低生长界面处的温度梯度的实验结果和实施途径,这有利于把产生位错的界面热应力降至最低。通过化学蚀的EPD观测和X射线衍射测试结果,分析了晶体中后部位错密度增高及其产生的原因。

 
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