能带不连续 band offset(1) band offsets(1)   band offset      X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported. The band offset between the X valley in AlAs barrier and the Γ valley in GaAs well given by the period in reciprocal field was found to be very close to the commonly adopted value. Owing to the well developed oscillatory feature,a new and sensitive experimental way to quantitatively study the Γ X coupling strength was provided.      报道了非对称GaAs／AlAs双势垒结构（DBS）中的Γ－X－Γ磁隧穿振荡现象，用磁场倒数周期求得AlAs层中X谷和GaAs层中Γ谷之间的能带不连续值与通常公认值符合很好．良好的振荡特性可作为定量研究Γ－X耦合强度的灵敏的实验办法 短句来源   band offsets      Determining Band Offsets of InAs/GaAs with Formation of Self-assembled InAs Quantum Dots      InAs/GaAs自组装量子点结构的能带不连续量 短句来源   相似匹配句对      Determining Band Offsets of InAs/GaAs with Formation of Self-assembled InAs Quantum Dots      InAs/GaAs自组装量子点结构的能带不连续量 短句来源      Design of The Energy Band For Heterojunction Bipolar Transistors      异质结双极晶体管的能带设计 短句来源      (3)Lim 1~*(λ)=O and l~*(λ)will be discontinuous at λ=O.      (3)处不连续. 短句来源      THE DERIVATION OF THE ENERGY BAND GRADIENT      能带梯度的推导 短句来源      Discontinuous gas exchange in insects      昆虫不连续气体交换 短句来源 查询“能带不连续”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   band offset In contrast to group-III arsenide-based quantum dots, group-III nitride-based quantum dots are much smaller in size and have less conduction band offset. 例句来源       Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs fr 例句来源       To determine the valence-band offset ΔEV and the built-in charge in the heterojunction, the Poisson equation was solved numerically on a nonuniform coordinate grid. 例句来源       The conduction-band offset parameter QC was determined from the DLTS and cathodoluminescence data. 例句来源       If the annealing is performed at Ura=0, no dipole is formed and the band offset is controlled by the conditions of heteroboundary formation during the structure growth. 例句来源       更多             band offsets An analysis is made of the interface contribution to the anisotropy induced by an external electric field for coinciding and different band offsets at the interfaces. 例句来源       Band offsets in Zn1-xCdxTe/ZnTe single-quantum-well structures grown by molecular-beam epitaxy on GaAs(001) substrates 例句来源       The effect of internal elastic strain on the band offsets and QC at the CdxZn1-xTe quantum well interfaces was calculated; the results of calculations agree well with experimental data. 例句来源       Simulation of the luminescence-line shift in a magnetic field allowed us to determine more accurately the band offsets at the ZnSSe/ZnMnSe interface. 例句来源       The design of the laser structure was chosen on the basis of the calculated band offsets at the heteroboundaries in the active region of the waveguide. 例句来源       更多                    The bard offset cccuring at abrupt heterc-interface in heterojunction devices has been studied for many years. It has been demonstrated that by present developing technology,the fabrication of true abrupt or grede heterojunction seems not difficult. Particalarly,in the GaAs/AlGaAs system, MBE and MOCVD are available to grow for this purpose. However,relatively little research has been carried on the optical properties of hetero-interface of such layers. The spikes and notches in the discontinuous energy bar...             在轻掺杂或不掺杂的GaAs/AlGaAs异质结LPE晶体中,在1.4K的温度下发现了一条新的、由于量子限制效应而出现的PL光谱线—H线。处于GaAs PL光谱的激子跃迁和最浅受主(C)跃迁之问的此H线是一条较宽(半宽～9meV)、拖有一长波方向尾的、而且其峰值能量随激发强度的增加而以对数线性方式移向激子线的高能端(移动超过8meV)的光谱线。H线与温度有密切的关系。随着温度的上升,H线移向较低能的受主跃迁边(达到2meV)而且发光强度很快下降,并在约14K处消失。阶梯蚀刻样品的PL实验证明了H线来源于GaAs/AlGaAs异质结的界面。一个异质结界面的能带不连续模型及其存在的类三角势阱的量子限制效应作用较满意地解释了H线的产生及变化的发光现象,实验表明,H线与此势阱限制的束缚载流子有密切的关系。 文摘来源          Thi-film heterojunction Z_nS_e(Z_(n1-x)Ca_xTe)_(1-y)(In_2Te_3)_y of Ⅱ-Ⅵ compounds developed by vacuum evaporation method Photoelectric properties of the heterojunction, e. g, the photocurrents-voltage characteristics, forward current-voltage characteristics anb dark cu(?)ent-voltage characteristics, are discussed in detail.             近年来,不少科技工作者从结晶学方面对Ⅱ—Ⅵ族化合物异质结制作技术进行深入地研究,制成一些具有优良性能的从可见光到近红外范围的光电器件,并获得广泛应用。一般说来,形成异质结的条件是构成异质结的材料应具有良好的相容性,要求异质结界面处原子,排列相似。但实际上由于材料的晶格常数、电子亲和能及热膨胀系数等的差异,还有制作工艺质量问题,常常在异质结界面产生大量的悬挂键和缺陷,造成结界面能带的不连续,对异质结性能产生严重影响。我们用真空蒸发方法,以Ⅱ—Ⅵ族化合物ZnSe、ZnTe及CdTe等为材料,制成ZnSe—(Zn_(1-x)Cd_xTe)_(1-y)(In_2Te_3)_y(x=0.2～0.5,y=0.02～0.07)薄膜异质结。用这种异质结作摄象管靶或其它光电器件。从结晶学来看,上述三种材料都是闪锌矿结构,理论上可以形成异质结,但由于晶格失配率大,是一种晶格不匹配异质结。本文简单叙述并讨论这种异质结的一些光电特性。 文摘来源          X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported.The band offset between the X valley in AlAs barrier and the Γ valley in GaAs well given by the period in reciprocal field was found to be very close to the commonly adopted value.Owing to the well developed oscillatory feature,a new and sensitive experimental way to quantitatively study the Γ X coupling strength was provided.             报道了非对称ＧａＡｓ／ＡｌＡｓ双势垒结构（ＤＢＳ）中的Γ－Ｘ－Γ磁隧穿振荡现象，用磁场倒数周期求得ＡｌＡｓ层中Ｘ谷和ＧａＡｓ层中Γ谷之间的能带不连续值与通常公认值符合很好．良好的振荡特性可作为定量研究Γ－Ｘ耦合强度的灵敏的实验办法 文摘来源   << 更多相关文摘         相关查询: 能带 不连续 能带结构 能带论 杂质能带 电子能带 能带近似法 能带断错 能带间距 能带图 激发能带 不连续相  对查询结果不满意

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