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     Treatment of human rectal adenocarcinama in nude mice with ~(131)I-labeled MC_3 monoclonal antibody
     ~(131)I标记抗人 结结癌单克隆抗体MC_3对裸鼠载人肠癌的治疗作用
     The depth of deeper junction is about 12μm and that of the shallower one is about 0.5μm.
     深结结深为12μm左右,浅结结深0.5μm左右.
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     Results Of 198 cases,ileocolonic intussusception 160 patients(80.8%),Cecocolic intussusception 21 patients(10.6%),colocolonic intussusecption 17 patients(8.6%),air enema reduction rate was 83% overall in childhood with acute intussusception.
     结果  198例儿童急性肠套叠 ,回结型 16 0例 ( 80 .8% ) ,盲结型 2 1例 ( 10 .6 % ) ,结结型 17例 ( 8.6 % ) ,空气灌肠复位率为 83 %。
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     Through synthesizing the change of intensity, elongation and other mechanical properties, and characterizing the surface configuration of fiber produced under different condition with SEM and OPM, the best spinning technology was confirmed.
     通过研究分析在不同纺丝工艺参数下制得纤维的拉伸断裂强度、断裂延伸率和结结强度等力学性能的变化,并用扫描电子显微镜(SEM)和偏光显微镜(OPM)对纤维的表面形态进行了表征,确定了最佳的纺丝工艺条件。
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     Parameters and characteristics of TiPtAu GaAs Schottky junction of MESFETs were analyzed by a two exponential analytical method, and parameter extraction and I V curve simulation of this junction were finished. Six junction parameters were extracted by numerical fit of an experimental I V curve.
     运用双指数函数模型方法分析了影响 MESFET的 Ti Pt Au-Ga As肖特基势垒结特性的各种因素及各因素间的关系 ,编制了 MESFET肖特基势垒结结参数提取和 I-V曲线拟合软件 ,实现了通过栅源正向 I-V实验数据提取反映肖特基势垒结特性的六个结参数和得到相应结参数下的理论数据 ,与实验数据吻合良好。
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     Chinese Knot
     中国
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     PHOTOCURRENT IN A DIFFUSED p-n JUNCTION
     扩散p-n的光电流
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Semiconductor color sensitive device is a new type of semiconductor photosensitive devices. It is fabricated by two p-n junctions with different junction depths in the same Si substrate. The depth of deeper junction is about 12μm and that of the shallower one is about 0.5μm. It can detects the wavelengths of incident light because the responses of these two different p-n junctions to short circuit currents in different wavelengths are different.This device may be used to detecting wavelengths from 5000 A to...

Semiconductor color sensitive device is a new type of semiconductor photosensitive devices. It is fabricated by two p-n junctions with different junction depths in the same Si substrate. The depth of deeper junction is about 12μm and that of the shallower one is about 0.5μm. It can detects the wavelengths of incident light because the responses of these two different p-n junctions to short circuit currents in different wavelengths are different.This device may be used to detecting wavelengths from 5000 A to 11000A conveniently and quickly. It can also be applied to various fields relating to the colors, such as: the color test of some colors and dyestuffs, the color distinction of printed matter; the color modulation of color strips of color TV set and of color film copies. This article mainly discusses the basic principles, the results of development and its theoretical analysis of Si semiconductor sensitive device.

半导体色敏器件,是一种新型的半导体光敏器件.它是由同一硅基片上两个深浅不同的PN结构成.深结结深为12μm左右,浅结结深0.5μm左右.利用这两个深浅不同的PN结,对波长不同的光的短路电流响应不同,来检测入射光的波长.这种器件可以方便、快速地检测波长在5000~11000A范围内光波的波长.而且还可用于一些颜色、染料的色检查,印刷物的色判别,彩色电视彩条和彩色电影拷贝的色调等与颜色有关的各个领域.本文主要介绍硅色敏器件的基本原理、试制结果及其理论分析.

Collection efficincies and short-circuit current of solar cells for flat-bandgap and gra-ded-bandgap window layer p-Ga1-xAlxAs/p-GaAs/n-GaAs structures are calculated as a function of various parameters.The results show that a thin window layer and drift field caused by graded Al mole fraction can effectively reduce the surface recombination effect improve short wavelength response and increase short-circuit current of the cell.The influences of p-n junction depth (thickness of p-GaAs layer),velocity of surface...

Collection efficincies and short-circuit current of solar cells for flat-bandgap and gra-ded-bandgap window layer p-Ga1-xAlxAs/p-GaAs/n-GaAs structures are calculated as a function of various parameters.The results show that a thin window layer and drift field caused by graded Al mole fraction can effectively reduce the surface recombination effect improve short wavelength response and increase short-circuit current of the cell.The influences of p-n junction depth (thickness of p-GaAs layer),velocity of surface recombination and diffusion length of separate layers on behavious of solar cells are also discussed.In order to get large short-circuit current,the electron diffusion length of window should be larger than its thickness and the electron diffusion length of p-GaAs layer should be three times larger than p-n junction depth.If the electron diffusion leng-th of p-GaAs layer is defined,there is a optimum junction depth in which short-circuit current of the cell will be maximum.

本文对p-Ga_(1-x)Al+xAs/p-GaAs/n-GaAs太阳电池收集效率的光谱响应和短路电流进行了计算,表明窗口层和窗口层漂移电场能有效地减小表面复合的影响,提高短波区的光谱响应。本文还讨论了窗口层厚度、Al组分、p-n结结深、表面复合速度和扩散长度对电池性能的影响。指出要得到大的短路电流,窗口层的电子扩散长度应大于窗口层厚度,p-GaAs区的电子扩散长度应大于三倍结深。在p-GaAs电子扩散长度一定的条件下,有一最佳结深,短路电流有极大值。

In this paper the design optimization of p-Alx Ga1-x As/p-GaAs/n-GaAs solar cell is discussed.In the optimization calculation,empirical relations are adopted between the diffusion length,resistivity and doping concentration of GaAs and the optimum refraction index and thickness of anti-reflection layer.Series resistance Rs and 10% areas of the electrode shadow are also taken into account in the computation.A direct sequential search technique is used to work out an optimization computer program with BASIC.Three...

In this paper the design optimization of p-Alx Ga1-x As/p-GaAs/n-GaAs solar cell is discussed.In the optimization calculation,empirical relations are adopted between the diffusion length,resistivity and doping concentration of GaAs and the optimum refraction index and thickness of anti-reflection layer.Series resistance Rs and 10% areas of the electrode shadow are also taken into account in the computation.A direct sequential search technique is used to work out an optimization computer program with BASIC.Three optimized parameters are: doping concentrations of GaAs in each side of junction NA,ND and depth d2 of p-n junction.The results of optimization involving maximum AMO efficiency and optimum parameters of structure and material of the solar cell are listed in a table.The effects of NA,ND,d2,R,and shunt resistance Rsh on device performances are presented.The influence of diffusion length on calculated results is also discussed.

采用GaAs扩散长度、电阻率与掺杂浓度的经验关系,考虑p-n结空间电荷区的产生和复合,计及10%的电极遮光面积及串联电阻R_s,在最佳单层抗反射膜条件下,以p-GaAs与n-GaAs区的掺杂浓度N_A、N_D及p-n结结深d_2为优化参数,用直角单纯形加速法对p-Al_xGa_(1-x)As/p-GaAs/n-GaAs结构的太阳电池作了最优化计算,得到了最佳电池的材料,结构参数以及最大AM0效率。讨论了电池性能与N_A、N_D、d_2、R_s的关系。分析了扩散长度的经验关系对优化结果的影响。

 
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