助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   共基 的翻译结果: 查询用时:0.017秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

共基
相关语句
  common-base
     Based on a 0.35 μm SiGe BiCMOS technology,two types of preamplifier were designed by using common-base and common-emitter plus common-base input stage respectively.
     基于0.35μm SiGe BiCMOS工艺,设计了共基极和共发共基两种输入结构的前置放大器.
短句来源
     We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
     本文从包括埋层影响的集区杂质分布出发,求出了寄生PNP晶体管的共基极电流放大系数。
短句来源
     The circuit consists of five elements, where the only nonlinear element is a common-base transistor pair with the characteristics of a current-controlled nonlinear resistor.
     该电路由5个元件组成,其中唯一的非线性元件是无反馈结构共基极晶体管对,其特性是电流控制的非线性电阻.
短句来源
     By adopting a simple and easy, we get the calculation formula of common-emitter and common-base configuration loop gain of oscillator circuit of three-point capacitance, hence work out an improved design of quiescence collector current and feedback.
     采用一种简便方法,得到了共基和共射组态电容三点式振荡电路环路增益的近似计算公式,并由此找出了静态集电极电流和反馈系数的优化设计方案。
短句来源
     In this paper,the CE-CB amplifier is analyzed with high frequency response in detail,the relation of the upper cut-off frequency and common-base amplifier upper cut-off frequency of this amplifier is obtained,and characteristic of this amplifier is also analyzed.
     该文对常用的共射—共基放大电路进行了高频响应的详细分析,给出了此电路的上限截止频率与共基放大电路上限截止频率的关系,并分析了此电路的特点.
短句来源
  “共基”译为未确定词的双语例句
     Analysis of GSM/WCDMA Networks Construction Based on Sharing Station Address
     GSM/WCDMA网络共基站建设分析
短句来源
     The rank of biodegradability was PCP>2,3,4,6-TeCP>2,4,6-TCP>2,4-DCP, the relation between the chlorophenol removing rate and its toxicity wasn't obviously under the conditions of glucose was used as co-substrate.
     PCP等四种氯酚降解难易程度依次为:PCP>2,3,4,6-TeCP>2,4,6-TCP>2,4-DCP,在共基质条件下,其自身去除率与各自毒性的关系不明显。
短句来源
     Interference Analysis between Macro WCDMA and Macro GSM1800 BS Co-located
     WCDMA和GSM1800宏蜂窝共基站干扰分析
短句来源
     The anaerobic biodegradation of PCP was followed by pseudo first-order kinetics with glucose as co- substrate (the COD concentration of glucose was 1800~1900mg/L).
     葡萄糖为共基质条件下(COD浓度为1800~1900mg/L),PCP的厌氧降解符合准一级反应动力学。
短句来源
     With glucose as co-substrate,anaerobic degradation kinetics of 2,4dinitrophenol(2,4-DNP) were investigated in batch culture.
     研究了间歇试验条件下,2,4-二硝基酚(2,4-DNP)与葡萄糖共基质时的厌氧降解动力学.
短句来源
更多       
  相似匹配句对
     High Frequency Response of the CE-CB Amplifier
     共射—共基电路的高频响应
短句来源
     Two Methods of Computation of Common-Bass Amplifier
     共基极放大电路的两种计算方法
短句来源
查询“共基”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  common-base
In this paper we explore the design of a new class of low-noise "current-mode" optical preamplifier based upon common-base and common-gate input stages.
      
Two current-mode designs are considered, firstly an improved bipolar common-base configuration and secondly a GaAs MESFET common-gate configuration.
      
A current steering transistor shunts the common-base cascode transistor to step down the LNA gain by 15 dB.
      
A rather standard Gilbert-multiplier type with common-base input stage has been implemented.
      
As has been discussed in Chapter 2, the common-base configuration has higher breakdown voltage compared to common-emitter.
      
更多          


This article attempts to propose theoretical computing formulas for input offset voltage and common mode rejection ratio of common emitter differential amplifier, common emitter-common base differential cascode amplifier and common emitter-common grid differential cascode amplifier. It proves that Early effect plays an important role so far as input offset and common mode rejection characteristics are concerned.In the past analysis on differential amplifiers offset characteristic and common mode rejection characteristic...

This article attempts to propose theoretical computing formulas for input offset voltage and common mode rejection ratio of common emitter differential amplifier, common emitter-common base differential cascode amplifier and common emitter-common grid differential cascode amplifier. It proves that Early effect plays an important role so far as input offset and common mode rejection characteristics are concerned.In the past analysis on differential amplifiers offset characteristic and common mode rejection characteristic have been separately dealt with as two different questions. And, in discussing offset characteristic the existance of Early effect, the essence of the matter has been neglected. However, if Early effect if analyzed as the leading factor, input offset characteristic and common mode characteristic of differential amplifier will fundamentally be unified in conception. Such an analysis will clearly show how differential amplifier circuits have been developed.The results thus obtained have led to the design of low drift operational module. The article analyzes the drift contribution to the input offset voltage from the nonideal characteristic of the following stage and gives the method to match low drift.In this operational module, open loop gain and common mode rejection ratio are no less than 120dB and offset voltage drift is no more than ?±0.5μV/℃. Hence, it can be used as high quality general purpose operational devices for automatic control and automatic detecting system.

本文以Early效应为主导线索,分析推导了共射(CE)差分级及共射-共基(CE-CB)、共射-共栅(CE-CG)串接差分级的输入失调电压Vos与共模抑制比(CMRR)的理论计算公式。证明Early效应对输入失调特性与共模抑制特性起着重要作用。文中还分析了后随级的非理想特性对输入失调电压温漂的影响,指出了实现低漂移功能块的匹配方法。据此分析而制作的低漂移运算功能块,其开环增益与共模抑制比均不低于120dB,失调电压温漂不大于±0.5μV/℃。 这种可用分立元件组装或可与单片集成前置级混合组装的功能块,可以作为自动控制与自动检测系统的高性能通用运算元件。

High precision integrated circuit operational amplifier KD205 designed and developed by our factory is described in this paper. High-β transistor and differential cascode amplifier are adopted as input stage. "Double chip integrated method" of npn and pnp transistors are used. Therefore, it is possible to Use complete vertical pnp transistors with good performance, avoiding the use of lateral pnp transistors of poor frequency response. KD205 features simple circuit structure, good performance, law technical...

High precision integrated circuit operational amplifier KD205 designed and developed by our factory is described in this paper. High-β transistor and differential cascode amplifier are adopted as input stage. "Double chip integrated method" of npn and pnp transistors are used. Therefore, it is possible to Use complete vertical pnp transistors with good performance, avoiding the use of lateral pnp transistors of poor frequency response. KD205 features simple circuit structure, good performance, law technical requirement, high product yield and convenience for mass production.

本文介紹我厂設計和研制成功的高精度集成电路运算放大器KD205。該产品在电路上采用高β晶体管、共射——共基串接形式作为輸入級;在工艺上采用npn晶体管和pnp晶体管“分片集成法”,避免用頻响差的横向pnp晶体管,而用高性能的完全縱向pnp晶体管。电路結构簡单,性能良好;工艺要求低、成品率高,便于成批生产。

This paper puts forward a new scheme for besigning a transistorized millivoltmeter of high sensitivity, high input impedance, wide frequency, range and wide measuring range. It also gives an analysis of the main crcuit which is characterized by a common base-common collector combination series voltage and negative feedback amplifier, and a transistor for both detection and d. c. amplifier. The frequency response linearity, sensitivity and stabilily of a small singal detection have been so well achievel that...

This paper puts forward a new scheme for besigning a transistorized millivoltmeter of high sensitivity, high input impedance, wide frequency, range and wide measuring range. It also gives an analysis of the main crcuit which is characterized by a common base-common collector combination series voltage and negative feedback amplifier, and a transistor for both detection and d. c. amplifier. The frequency response linearity, sensitivity and stabilily of a small singal detection have been so well achievel that she suppression of the gain of the amplifier can be made possible for the increasing of the frequency range. In this circuit transostois of low f_r may be used. and the crcuit has the following advantages also: simplified compensating performance. low noise, good temperature stability and high exchangeability transitois. The cost of such a transistor millivoltmeter is low,production and maintenace are simple and conveient.

本文提出一种全晶体管化的高灵敏度、高输入阻抗、宽频带、宽量程毫伏表设计的新方案,并对主要电路行进分析.其特点是采用共基—共集组合电压串联负反馈放大电路,并用晶体管检波兼直流放大.较好地解决了小信号检波的频响、线性、灵敏度和稳定性问题,以便压缩放大器的增益来扩宽频带.分析与实践证明,这种方案的优点是可以选用'T较低的管子,并简化了补偿手续,噪声小,温度稳定性好,管子互换性强、成本低便于生产使用与维修.经有关标准计量单位鉴定合格,已正式投入批量生产.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关共基的内容
在知识搜索中查有关共基的内容
在数字搜索中查有关共基的内容
在概念知识元中查有关共基的内容
在学术趋势中查有关共基的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社