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A lateral magnetotransistor made with buried p-layer CMOS technology is described. The device is constructed with a double base, double collector npn transistor. In the device,the lateral injection effect is suppressed,that is,the injection will be concentrated in the middle of the emitter area and the minority carriers in the neutral base area is double deflected, thus climinating the lateral reactive current. The buried p-layer is to eliminate the vertical reactive current. The device has an excellent linear... A lateral magnetotransistor made with buried p-layer CMOS technology is described. The device is constructed with a double base, double collector npn transistor. In the device,the lateral injection effect is suppressed,that is,the injection will be concentrated in the middle of the emitter area and the minority carriers in the neutral base area is double deflected, thus climinating the lateral reactive current. The buried p-layer is to eliminate the vertical reactive current. The device has an excellent linear response to magnetic field. 本文介绍了一种用P埋层CMOS工艺制造的横向磁敏晶体管(LMT)。器件结构是双基极、双集电极npn晶体管。它具有抑制侧向注入效应,即将注入集中于发射区的中部,在中性基区的少数载流子受到双重偏转作用,消除了横向无功电流。在CMOS工艺的基础上加了P埋层,消除了纵向无功电流。器件对磁场有良好的线性响应。 It was reported that there is a sudden change on light transthessivity of crystal mag ma at its saturationtemperature. In order to study the mechanism, the phenomenon of the sudden change on crystal diffusion layer nearby the syrup saturation temperature was record ed with the holographic interferometry. The bend of light beam on the interface of the crystal particle andits diffusionlayer was analyzed accordance with the diffraction law of light trans drissivity of magma does not decreased until the supersaturated... It was reported that there is a sudden change on light transthessivity of crystal mag ma at its saturationtemperature. In order to study the mechanism, the phenomenon of the sudden change on crystal diffusion layer nearby the syrup saturation temperature was record ed with the holographic interferometry. The bend of light beam on the interface of the crystal particle andits diffusionlayer was analyzed accordance with the diffraction law of light trans drissivity of magma does not decreased until the supersaturated magma was heated,and the alter of diffusion layer plays an important part in this sudden change of light transmissivity. 用全息干涉的实时法记录了结晶的浓度扩散层在饱和温度发生突变的现象,依据光的折射原理分析了浓度扩散层和晶粒对光线的偏转作用,提出了晶浆透光率在其饱和温度发生突变的机理。并且进行了实验验证。 Mica_containing glass-ceramics before and after hot_pressing treatment were investigated by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). It is found that mica crystals randomly dispersed in the glass matrix before hot_pressing orientate preferentially after hot_pressing treatment,combining with the viscous flow of the residual glass phase. After hot_pressing treatment,both fracture toughness and bending strength constantly increase with the crystallization time and hot_pressing... Mica_containing glass-ceramics before and after hot_pressing treatment were investigated by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). It is found that mica crystals randomly dispersed in the glass matrix before hot_pressing orientate preferentially after hot_pressing treatment,combining with the viscous flow of the residual glass phase. After hot_pressing treatment,both fracture toughness and bending strength constantly increase with the crystallization time and hot_pressing deformation. This is attributed to the variation of the microstructure, i.e., mica crystals preferentially oriente in the glass matrix,which effectively deflect the crack propagation along the direction of hot_pressing. 用X射线衍射(XRD)和扫描电镜(SEM)对经过热压处理前后微晶玻璃进行了分析.结果发现,微晶玻璃中随机取向的云母晶体在热压过程中随着残余玻璃相的高温粘滞流动而发生定向排列.热压后定向排列的云母晶体对沿热压方向扩展的裂纹的偏转作用增强,使得热压方向上微晶玻璃的强度和断裂韧性增加.
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