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gap薄膜
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  “gap薄膜”译为未确定词的双语例句
     Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure properties of the films have been measured using double crystal X-ray diffractometry (DCX) and electron microscope. The DCX rocking curves and energy dispersion spectrum show that a single crystal GaP/Si film has been obtained.
     我们用MOCVD方法在Si衬底上异质外延GaP薄膜,通过X光双晶衍射和能谱分析,在国内用MOCVD方法首次获得了GaP/Si的单晶薄层,并研究了它们的结构特性.
短句来源
     Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure properties of the films have been measured using double crystal X-ray diffractometry (DCX)and electron microscope. The DCX rocking curves and energy dispersion spectrum show that a single crystal GaP/Si film has been obtained.
     我们用MOCVD方法在Si衬底上异质外延GaP薄膜,通过X光双晶衍射和能谱分析,在国内用MOCVD方法首次获得了GaP/Si的单晶薄层,并研究了它们的结构特性。
短句来源
     GaP films have been prepared by RF magnetron sputtering of single crystalline gallium phosphide The deposition rate, composition, structure, hardness and optical properties of GaP films have been also investigated The results show that the atom ratio of gallium to phosphor is near 1∶1 and the deposited films are amorphous compound GaP;
     利用磁控溅射法成功地制备出 Ga P薄膜 ,并对 Ga P薄膜的沉积速率、成分、结构及红外光学性能进行了研究。 结果表明 ,沉积薄膜中 Ga与 P的原子比接近 1∶ 1,形成了 Ga P化合物 ,呈非晶态结构。
短句来源
     GaP films with different deposition parameters had been prepared on the ZnS substrate by radio frequency(RF) magnetron sputtering. The affection of different deposition parameters, such as RF power, gas pressure, gas flow rate and film thickness on infrared transmission of GaP films were analysed with FTIR.
     采用射频磁控溅射方法在ZnS衬底上制备了不同工艺参数下的GaP薄膜 ,并通过FTIR分析了工艺参数对GaP薄膜红外透过率的影响规律。
短句来源
     Gallium phosphide thin film has been deposited by RF magnetron sputtering with high-purity Ar as the working gas and single crystal GaP disc as the target,and germanium carbon thin film has been deposited by reactive RF magnetron sputtering in high-purity Ar and CH_4 mixture with single crystal Ge disc as the target as well.
     采用射频磁控溅射法,以高纯Ar为工作气体、单晶GaP圆片为靶制备了GaP薄膜; 用射频磁控反应溅射法在高纯Ar和CH4的混合气体中,以单晶Ge圆片为靶制备了GeC薄膜。
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  相似匹配句对
     Silan-based Thin Films
     硅烷薄膜
短句来源
     Physcis of the Thin Film
     《薄膜物理学》
短句来源
     Historical Development of GAP
     GAP的发展
短句来源
     Pulsed measurement of GaP.N photoluminescence
     GaP:N光致发光的脉冲测量
短句来源
     Effect of technical parameters on deposition rate of GaP films depositted by magnetron sputtering
     工艺参数对磁控溅射磷化镓(GaP)薄膜沉积速率的影响
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  gallium phosphide films
Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films
      
Electroluminescence and photoluminescence of gallium phosphide films
      
Electrical and optical properties of gallium phosphide films
      
The electrical and optical properties of gallium phosphide films, prepared by the explosive evaporation and three-temperature methods, are studied.
      
Gallium phosphide films prepared by explosive evaporation having perfect structure possess the best electrical and optical properties.
      
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The techniques combining microelectronic materials with optoelectronic's are important aspects of functional devices in future.Because of its small lattic mismatch with Si(≤0.4%),GaP has been recognized as the first candidate for attempting Ⅲ/V-on-Si epitaxial growth.One objective of GaP/Si structure is to achieve monolithic integration of GaP light-emitting diodes on large area,low cost and high thermal conductivity Si substrates.Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure...

The techniques combining microelectronic materials with optoelectronic's are important aspects of functional devices in future.Because of its small lattic mismatch with Si(≤0.4%),GaP has been recognized as the first candidate for attempting Ⅲ/V-on-Si epitaxial growth.One objective of GaP/Si structure is to achieve monolithic integration of GaP light-emitting diodes on large area,low cost and high thermal conductivity Si substrates.Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure properties of the films have been measured using double crystal X-ray diffractometry (DCX) and electron microscope.The DCX rocking curves and energy dispersion spectrum show that a single crystal GaP/Si film has been obtained.

微电子和光电子材料兼容的技术是未来功能器件中的一个重要方向,它可以将成熟的Si集成工艺和GaP优良的发光特性结合起来,完成新一代微型显示和集成光学元件.我们用MOCVD方法在Si衬底上异质外延GaP薄膜,通过X光双晶衍射和能谱分析,在国内用MOCVD方法首次获得了GaP/Si的单晶薄层,并研究了它们的结构特性.

The techniques combining microelectronic materials with optoelectronic's are important aspects of functional devices in future. Because of its small lattic mismatch with Si(≤0.4%),GaP has been recognized as the first candidate for attempting Ⅲ/Ⅴ-on-Si epitaxial growth. One objective of GaP/Si structure is to achieve monolithic integration of GaP light-emitting diodes on large area, low cost and high thermal conductivity Si substrates. Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure...

The techniques combining microelectronic materials with optoelectronic's are important aspects of functional devices in future. Because of its small lattic mismatch with Si(≤0.4%),GaP has been recognized as the first candidate for attempting Ⅲ/Ⅴ-on-Si epitaxial growth. One objective of GaP/Si structure is to achieve monolithic integration of GaP light-emitting diodes on large area, low cost and high thermal conductivity Si substrates. Heteoepitaxy of GaP film grown by MOCVD on silicon was investigated. The structure properties of the films have been measured using double crystal X-ray diffractometry (DCX)and electron microscope. The DCX rocking curves and energy dispersion spectrum show that a single crystal GaP/Si film has been obtained.

微电子和光电子材料兼容的技术是未来功能器件中的一个重要方向,它可以将成熟的Si集成工艺和GaP优良的发光特性结合起来,完成新一代微型显示和集成光学元件。我们用MOCVD方法在Si衬底上异质外延GaP薄膜,通过X光双晶衍射和能谱分析,在国内用MOCVD方法首次获得了GaP/Si的单晶薄层,并研究了它们的结构特性。

GaP films with different deposition parameters had been prepared on the ZnS substrate by radio frequency(RF) magnetron sputtering. The affection of different deposition parameters, such as RF power, gas pressure, gas flow rate and film thickness on infrared transmission of GaP films were analysed with FTIR. From which a group of optimum parameters were selected to have prepared 10.5 μm GaP film on substrate with a better bonding strength and obtained a multiplayer of DLC/GaP according to designed requirement....

GaP films with different deposition parameters had been prepared on the ZnS substrate by radio frequency(RF) magnetron sputtering. The affection of different deposition parameters, such as RF power, gas pressure, gas flow rate and film thickness on infrared transmission of GaP films were analysed with FTIR. From which a group of optimum parameters were selected to have prepared 10.5 μm GaP film on substrate with a better bonding strength and obtained a multiplayer of DLC/GaP according to designed requirement. Results show the antireflection property of DLC/GaP films is excellent, and the increase of the mean transmission in 8~11.5 μm waveband is 5.69%, which can meet the application requirement.

采用射频磁控溅射方法在ZnS衬底上制备了不同工艺参数下的GaP薄膜 ,并通过FTIR分析了工艺参数对GaP薄膜红外透过率的影响规律。利用优化后的工艺参数成功地制备了厚为 10 .5 μm的GaP膜 ,根据膜系设计结果制备了DLC/GaP膜系。实验表明 ,GaP厚膜与基体结合性能较好 ,光学性能亦有所改善 ;DLC/GaP膜系的红外增透效果良好 ,在 8~ 11.5 μm波段平均透过率净增 5 .6 9% ,足以满足 8~ 11.5 μm增透要求。

 
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