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效应
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  effeet
    This paper derives the Dual-Gate MOSFET'S physical models based on the single gate MOSFE'S physical model. The model consider not only the effect of drain voltage modulation on channel but the effeet of the gate voltage on channel carrier mobility as well. Dual-Gate MOSFET V-I charcteristics derived from the models are compared with experiment.
    本文以单栅MOSFET的物理模型为基础,导出了双栅MOSFET的物理模型,该模型中,不仅考虑了漏压对沟道长度的调制效应,而且也考虑了栅压对沟道中载流子迁移率的影响,由该模型导出的双栅MOSFET的V—I特性与实验结果做了比较,二者符合得很好,并对器件的V—I特性从物理机制上进行了详细讨论。
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  “效应”译为未确定词的双语例句
    Study on the Key Processes and Modeling of SiC Field-Effect Devices
    碳化硅场效应器件的模型及关键工艺技术研究
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    6mm Waveband(40-60GHz) GaAs Gunn Diode
    6毫米波段(40~60GHz)砷化镓体效应二极管
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    Results for Accelerated Life Test of Model WT55 1.25cm-Gunn Diodes
    WT55型1.25厘米体效应管加速寿命试验
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    Simulation of Charge Storage in Silicon Switching Transistor
    Si开关晶体管电荷存贮效应的模拟
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    A X-Band 500-700mW Gunn Diode
    X波段500-700毫瓦体效应
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  effeet
This was significant in both subtypes, and indicated that the threshold for the positive effeet of warmth was higher for fathers than for mothers.
      
Propranolol, but not metoprolol, reversed this insulin-antagonistic effeet of adrenaline.
      
The kaliuretic effeet of sodium chtoride in rats, therefore, is assumed to be due to an increase in the excretion of sodium rather than of chloride.
      
The nephrotic syndrome presumably caused by an immune complex glomerulonephritis constitutes a major side effeet attendant upon chronic administration of penicillamine.
      
The effeet of long-term storage on the viability and regeneration eapacity of somatic embryogenic white spruce tissue (Picea glauca) was investigated.
      
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The current stablizer, reported in this paper, is part of a φ-ray spectrometer. Principally, it can also be used in other apparatus requiring stablized current. The stablizer can supply a maximum current of 100 A with a degree of stablity of 0.02% in ten minutes.

论文中所叙述的磁场电流稳定器是β谱仪的一部分。基本上它也能应用在其他需要稳定电流的仪器上。它能控制的电流最大可到100安。稳定的程度是在10分钟内电流的变动不超过0.02%。稳定器采用负反馈伺服控制原理。首先将通过标准电阻的直流电流的误差讯号加以放大。为了避免直流电压放大器的漂移效应,我们桥式式平衡调制器将直流讯号变成交变讯号后再用交流放大,然后用相灵敏解调器恢复直流讯号。在这一过程中需要的增益大约是2×10~4,我们要考虑到调制器输出点在没有讯号输入时零电位的保持,调制器的载波成分输出问题,和经过放大后调制输出讯号的波形畸变。我们把放大后的讯号再加以功率放大来控制直流发电机的激励磁场,这样就能达到稳定电流的目的。因为在系统中存在着电容和电感,讯号在系统中傅递时就有时间延迟,在闭环系统就会产生低频振荡的不稳定现象。所以在系统中安装抵消这种振荡的镇定网络也是一种必要的措施。论文的最后部分描述稳定器的部件,具体的安排,运转结果和性能。

Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that the diffusion...

Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that the diffusion coefficient rises very rapidly when the concentration exceeds 1019/cm3.

用四探针测量薄层电导方法及阳极氧化去层技术,测定了磷在硅中扩散的具体分布,在恒表面浓度下,它们偏离余误差函数分布。如认为这是由于扩散系数是杂质浓度的函数,实验得到了当杂质浓度大于10~(19)原子/厘米~3时,扩散系数随杂质浓度增加而增大的强烈依赖关系。 用同样方法测定了磷通过二氧化硅层后在硅中扩散的具体分布,研究了这些杂质分布的特性,实验表明,不同厚度的氧化层在1300℃高温下仍具有掩蔽效应,在完全掩蔽失效时间附近,杂质分布的共同特点是表面浓度较低(~10~(17)原子/厘米~3)、结较浅(~1微米)。对不同厚度的氧化层,经过足够的时间后,硅中表面浓度不受氧化层厚度的影响,而只由扩散源的蒸气压决定。磷通过氧化层后扩散的具体分布情况还与扩散源的性质、条件等密切相关。扩散过程中观察到的氧化层厚度增长有可能影响表面附近杂质的具体分布情况。

Several film-resistor materials and the general requirements for the surface of the substrate are described. The insulation resistance of the substrates at high temperature were measured. The effects of various subsrates upon the load lives of the three kinds of film resistors were investigated. It has been pointed out from the tests of the metal film resistor that the initial changes of the resistance were semi-permanent on D.C. load and the electrochemical corrosion of the films was gradual and relatively...

Several film-resistor materials and the general requirements for the surface of the substrate are described. The insulation resistance of the substrates at high temperature were measured. The effects of various subsrates upon the load lives of the three kinds of film resistors were investigated. It has been pointed out from the tests of the metal film resistor that the initial changes of the resistance were semi-permanent on D.C. load and the electrochemical corrosion of the films was gradual and relatively long. This effect had much to do with the test conditions and could be slowed down by derating. The different contents of Na+ and k+ in the substrate showed quite different effect.This paper presents some possible methods for improving the D. C. aging performance of film resistors. By comparing the load lives of the newer and older substrates it is considered to be very effective to add alkali-earth metal oxides as the flux for the ceramic substrate.

本文叙述了几种薄膜电阻器的材料和对瓷体表面的一般要求。测试了基体的高温绝缘电阻特性;研究了不同基体对三种薄膜电阻器负荷寿命的影响。金属膜电阻器的试验指出:直流负荷时,开始阻值变化呈半永久性,薄膜的电化学腐蚀破坏是逐渐的、比较长期的。这一过程与试验条件有关:当降低比负荷功率时可以减缓这一效应;基体中鉀、钠含量不同,这一效应有显著差别。 文中指出了改善薄膜电阻器直流老化性能的一些可能措施。根据新、老瓷体电阻器的负荷寿命对比的结果,作者认为有效的措施是:采用以碱士金属氧化物为助熔剂的陶瓷基体。

 
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