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器件模拟     
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  device simulation
     The device simulation of AlGaAs/GaAs resonant tunneling diode(RTD)is performed by ATLAS,SILVACO softwares,and RTD I-V characteristics are obtained with different structures.
     使用SILVACO公司的器件模拟软件ATLAS对AlGaAs/GaAs共振隧穿二极管(RTD)进行了器件模拟,得到了不同结构的RTD的I-V特性曲线。
短句来源
     Application of CGS Algorithm for Semiconductor Device Simulation
     CGS算法在半导体器件模拟中的应用
短句来源
     Characteristics analysis of AlGaAs/GaAs resonant tunneling diode by device simulation
     器件模拟对AlGaAs/GaAs RTD的特性分析(英文)
短句来源
     Analysis and Design for Deep Submicron Semiconductor Device Simulation
     深亚微米半导体器件模拟方法的分析与设计
短句来源
     The trade off process parameters was designed with themixed process and device simulation, and the substrate material fabrication flowwas developed and searched at the same time.
     通过将工艺模拟和器件模拟相结合,设计了器件的工艺步骤和工艺参数,针对该器件对衬底材料的特殊要求,设计了SOI材料的制备流程,进行了材料制备的探索工作。
短句来源
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  device modeling
     Determination of Parameters for P-N Junction Device Modeling
     P-N结器件模拟参数的确定
短句来源
     Nonstationary Transport Equations and the Extraction of Related Parameters for Semiconductor Device Modeling
     用于器件模拟的非稳态输运方程及有关参数的提取
短句来源
     For its device modeling, 1-dimensional analytical models, 2dimensional numeric or semi-numeric models and Monte Carlo models for small feature size device have been developed in recent years.
     在器件模拟这一领域,已经发展了一维分析模型、二维数值模型或半数值模型以及针对小尺寸器件的MonteCarlo模型。
短句来源
     To reduce the computational work, when the parameters needed in modeling begin to function is discussed on the basis of the formula for semiconductor device modeling.
     在给出半导体器件模拟基本方程的基础上,为减少模拟过程中的运算量,对模拟中所需的参数在何种状况下才开始起作用加以讨论。
短句来源
  device modelling
     Application of the Coupled Finite-Element Method to Semi-Conductor Device Modelling
     半导体器件模拟中耦合—有限元法应用的研究
短句来源
     The examples indicate that using regression model instead of process and device modelling is superior in process optimized design and device performance prediction.
     实例表明,在工艺优化设计和器件性能预测中用回归模型代替工艺-器件模拟具有较大的优越性。
短句来源
  device simulator
     This program has been integrated into device simulator PISCES 2H.
     本程序已被集成到器件模拟软件PISCES-2H中。
短句来源
     The full process is simulated by SSUPREM4 together with the device simulator S PISCES. It has been applied to practical production.
     与集成电路器件模拟软件S-PISCES联用模拟了SSUPREM4 的全工序, 并把它应用于实际生产。
短句来源
     SMDS——A Semiconductor Device Simulator Designed with Object oriented Technology
     SMDS——一个采用面向对象技术设计的半导体器件模拟软件
短句来源
     Small-signal high frequency characteristics of 4H-SiC MESFETs have been studied with the two-dimensional device simulator MEDICI based on the operation model of 4H-SiC MESFETs developed in this paper.
     建立了4H SiCMESFETs的模型,运用二维器件模拟软件MEDICI对4H SiCMESFETs的高频小信号特性进行了研究.
短句来源
     The isolation performance,Kink effect and inverse narrow width effect of the STI isolation structure are also analyzed with a 2 dimension device simulator,namely Medici and a 3 dimension device simulator,Davinci.
     使用器件模拟软件 Medici和 Davinci分析了 STI结构的隔离性能以及沟槽隔离 MOSFET的 Kink效应和反窄宽度效应
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  device simulation
NANODEV: A Nanoelectronic-Device Simulation Software System
      
The sparse matrix technique in the device simulation can decrease, storage greatly with less CPU time and its implementation is very easy.
      
The device simulation played a very important role in best understanding BBD's behavior, because it could easily take into account parameters strongly affecting the behavior of BBD's, e.g.
      
As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to conventional devices.
      
Stabilized finite elements for semiconductor device simulation
      
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  device modeling
Spatial navigation and causal analysis in a brain-based device modeling cortical-hippocampal interactions
      
The diffusion length is nearly independent of temperature, which is interesting for device modeling.
      
We prove asymptotic stability results for nonlinear bipolar drift-diffusion-Poisson Systems arising in semiconductor device modeling and plasma physics in one space dimension.
      
Most of the groups are deal with the nanomaterial technology and only few of them have activities in nanostructure science and engineering, in new concepts and device modeling and technology.
      
Given are an example of device modeling, system-level modeling, and the temperature decay of a biomedical sensor chip.
      
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  device modelling
Several examples are given that have been successful in solving the coupled nonlinear PDEs which arise in semiconductor device modelling.
      
Simulation calculations and device modelling of such solar cells have increased our understanding of amorphous semiconductors and their devices.
      
A hierarchical library of predefined partial differential equations and boundary conditions for microelectromechanical device modelling is created.
      
The possibility of developing an extension of density functional methods but using generalised currents as coordinates is examined as a possible route for future device modelling at atomistic scales in the presence of strong many body effects.
      
Massively parallel methods for semiconductor device modelling
      
更多          
  device simulator
Thus polarization effects can be taken into account in a traditional device simulator.
      
Considerable effort was spent on our two-dimensional device simulator MINIMOS-NT to get it ready for simulation of devices with high complexity in respect to materials, geometries, etc.
      
Being an ancestor of the well-known MOS device simulator MINIMOS [1], its experience with Si devices was inherited.
      
Thereby, MINIMOS-NT became a generic device simulator accounting for a variety of micro-materials, including group IV semiconductors, III-V compound semiconductors and their alloys, and non-ideal dielectrics.
      
The theoretical analysis has been done for bothp- andn-channel FESCs by employing a two-dimensional device simulator which is based on current continuity and Poisson equations.
      
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