The isolation performance,Kink effect and inverse narrow width effect of the STI isolation structure are also analyzed with a 2 dimension device simulator,namely Medici and a 3 dimension device simulator,Davinci.
NANODEV: A Nanoelectronic-Device Simulation Software System
The sparse matrix technique in the device simulation can decrease, storage greatly with less CPU time and its implementation is very easy.
The device simulation played a very important role in best understanding BBD's behavior, because it could easily take into account parameters strongly affecting the behavior of BBD's, e.g.
As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to conventional devices.
Stabilized finite elements for semiconductor device simulation
Several examples are given that have been successful in solving the coupled nonlinear PDEs which arise in semiconductor device modelling.
Simulation calculations and device modelling of such solar cells have increased our understanding of amorphous semiconductors and their devices.
A hierarchical library of predefined partial differential equations and boundary conditions for microelectromechanical device modelling is created.
The possibility of developing an extension of density functional methods but using generalised currents as coordinates is examined as a possible route for future device modelling at atomistic scales in the presence of strong many body effects.
Massively parallel methods for semiconductor device modelling
Thus polarization effects can be taken into account in a traditional device simulator.
Considerable effort was spent on our two-dimensional device simulator MINIMOS-NT to get it ready for simulation of devices with high complexity in respect to materials, geometries, etc.
Being an ancestor of the well-known MOS device simulator MINIMOS , its experience with Si devices was inherited.
Thereby, MINIMOS-NT became a generic device simulator accounting for a variety of micro-materials, including group IV semiconductors, III-V compound semiconductors and their alloys, and non-ideal dielectrics.
The theoretical analysis has been done for bothp- andn-channel FESCs by employing a two-dimensional device simulator which is based on current continuity and Poisson equations.