A N-silicon crystal is stressed in the (100) axis, in the meantime a electric field is applied along the (100) and the [010] direction resspectively. As a result the variation of conductivity takes place mostly because of the variation of electronic mobility when electrons transfer between the valleys.
A process of electroless copper plating and its pretreatment of semiconductor N-silicon were introduced,(using) sodium hypophosphite as reducer and nickel sulfate as re-activation agent.
Deep level parameters of the dislocations were measured byDLTS technique, one peak E_v+0.33 eV in p-Si and two peaks E_c-0.37 eV and E_c-0.50 eVin n-Si have been obtained respectively.
The experimental results show that the maching speed of n-doped silicon micro-EDM in demonized water is higher than in kerosene,and the wear of the electrode is also higher,and roughness is almost the same. Demonized water is a kind of better dielectric fluid.
Thickness and resistivity of anodic borosilicate coatings synthesized on n-type silicon were studied in relation to the conditions in which the final forming potentials are reached and to the content of boric acid in an ethylene glycol solution.
The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 1013 cm-3 is investigated as a function of temperature in the range 10-300 K.
It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?1015cm-3 at T>amp;gt;45 K.
Switching from a state with a steady-state nonequilibrium depletion and low current into the "on" state with a high current and low voltage drop on the structure is observed in highly doped n+-polysilicon-tunnel-oxide-n-silicon structures.
The acoustic emission method is employed for an experimental investigation of the effect of a magnetic field on the mobility of edge dislocations in a plastically deformed n-silicon sample carrying a current.
It is shown that thermal nitridation of the surface layers of the glass samples at a temperature of 375-495°C and a pressure of 0.1-1.0 MPa for 1-20 h brings about the breaking of the Si-O-Si bonds and the formation of the Si-N-Si and Si-N bonds.
The observed kinetics of the MCC generation current for the MCCs induced in an n-Si MOS structure at 293 K experimentally confirms the realization of these conditions.
Paramagnetic centers with free valences at silicon [(≡Si-O-)2Si· (-NH2) and (≡Si-O-)2Si· -N(-Si≡)2] and nitrogen atoms [≡Si-N· -H and ≡Si-N· -Si≡] were detected.
Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric field, four electron states exist in the silicon energy gap.
The TiO2 powder was dispersed in aqueous solutions of poly(3,4-ethylendioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS), and the blends were coated on n-doped silicon substrates to achieve simple design heterojunctions.
Ti(Si(1-x)Ge(x))2 formation on narrow lines was carried out on phosphorous doped material, because of the well known difficulties of forming silicide on heavily n-doped silicon.
n型硅
n-type silicon
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