It was discovered that,the addition of n-type semiconductor CeO_2 to Ni catalyst would decrease carbon deposition activity of CH4 and C_2H_6 cracking,whereas the addition of p-type semiconductor Co_3O_4 would increase carbon deposition activity of CH_4 and C_2H_6 cracking.
The photoelectrochemical properties of n-type semiconductor CdS_(1-x) Sex (X=0.05, 0.1, 0.15, 0.3, 0.5) liquid junction photoelectrochemical cell prepared bypowder sintering pressed electrodes are described in this paper.
Besides the effect of specific surface, it has been revealed that NiTPP supported on n-type semiconductors (NiTPP /ZnO, NiTPP/TiO2 and NiTPP/Cr2O3) showed more marked catalytic activities than NiTPP supported on other types of supports (NiTPP/CuO, NiTPP/SiO2 and NiTPP/Ni2O3 ) .
Seebeck coefficient measurements results show that the glass is of n-type semiconductors, conductivity of the glass σ lies in the range from 3.72×10￣(-5) to 1. 82×10￣(-6)S·cm￣(-1) at 473K.
N type semiconductor oxides, such as ZnO, MgO, Ni_2O_3 and SnO_2, are there- fore tested to be used as catalyst in electroless plating to substitute for precious metals.
Using a static state method to measure its sensitive characteristic,the measurement indicates that the sensor appears N type semiconductor to NO_2,the sensitivity is 7.45 times when the gas density is 0.010%;
With different incident light wavelength,transient photocurrent spectra showed different characteristics. A characteristics of n type semiconductor appeared in Ti 4+ doped Fe 2O 3 nanocrystalline electrode;
Ultra micron SnO2 and WO3 attribute to N type semiconductor substance, the formers have the electricity in surface interspaces former, the grain boundary interface potential barrier, the absorption gas producing energy level former and AET former.
Zn∶Al is the material of N type semiconductors. It exhibits low resistant, highly transparent. This paper is devoted to the preparation of ZAO by dc and rf magnetron sputtering and the influence of deposition parameters on the resistance.
This indirectly testifies that ferromagnetism in the aforementioned n-type semiconductor is associated with the exchange interaction of magnetic ions via conduction electrons rather than with the formation of Co clusters in the material.
RF response and capacitance-voltage and current-voltage characteristics of n-type semiconductor crystals CdF2:In, CdF2:Ga, and CdF2:Y with a Schottky barrier were studied.
The Mott-Schottky analysis indicated that the passive film appeared an n-type semiconductor, and the donor density of passive film increased with increasing Sn content.
The ratio between recombination coefficients corresponding to the thermal-collisional and Lax capture mechanisms is calculated at different degrees of compensation at a cryogen temperature (T = 4.2 K) for n-type semiconductors.
The results showed the oxide layers to be n-type semiconductors with a bandgap between 2.6 and 3.3?eV and a flatband potential of approximately -300 to +400?mV (relative to the SCE).
It might be suggested that the sites responsible for the electrondonor on magnesia, alumina, and silica (insulators) surfaces involved OH- ions and those on the zinc oxide and titania (n-type semiconductors) surfaces involved conduction electrons.
At present, almost all TCO thin films are n-type semiconductors as it is extremely difficult to fabricate a p-type TCO semiconductor.
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Conversely, there are n-type semiconductors where the main carriers are the electrons.
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For n-type semiconductors, RH is negative, while for p-type it is positive.
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Tin oxide thin films are n-type semiconductors with high transparency and very good electrical conductivity.
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This article is to report the results of study of the properties of the amorphous silicon film (GD-aSiHx) prepared by the glow discharge technique by measuring it electrical conductivity and photoconductivity. The experimental results indicate that the GD-aSiHx material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-aSiHx, the mobility gap Eg of 1.65 eV is obtained. Str...
A sucessful reproducible method of preparation of semiconductor photoelectrode which was used as photoanode in the PEC cell for solar energy conversion has been described.Titanium dioxide film was thermally formed in the titanium plate in an electric furnace and was reduced in the argon or hydrogen atmosphere for obtaining a n-type semiconductor photoelectrode. The photoelectrochemical properties and the spectrum response of the PEG cell consisted of titanium dioxide was investigated, and the evolution of h...
Both the open circuit potential and stability of an illuminated photo-electrochemical electrode depend on the composition of electrolytic solution in which the electrode is immersed. The open circuit potential varies linearly with the logarithm of light intensity. The potentials of n-type semiconductor photoelectrodes shift to more positive values as the concentrations of oxidants in solutions increase, but they are almost unaffected by the concentrations of the reductants. Formula of photopotential was der...
n型半导体
n-type semiconductor
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