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形状分析
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  “形状分析”译为未确定词的双语例句
    The pulse-shapes were obtained by numerial calculating the Q-switched rate equations and the influence of the pulse-shapes on OPG were analysed.
    通过调Q脉冲的速率方程的数值计算得到脉冲形状,分析了脉冲形状对光参量振荡的影响。
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  shape analysis
A Statistical Method of Pulse Shape Analysis and Its Application to Nuclear Spectroscopy
      
The line shape analysis confirmed the presence of a spatially modulated, incommensurate cycloidal spin structure in BiFeO3 and allowed the actual spin distribution to be reproduced throughout the cycloid length.
      
Spectral-peak-shape analysis demonstrates the high hydrophilicity of hydrogenated single-walled carbon nanotubes, whereas the sorption of atmospheric oxygen is insignificant as compared with the sorption of water.
      
A discussion is given of background reduction by material selection, detector segmentation, pulse shape analysis, and electroformation of copper parts and granularity.
      
Multi-sensor image registration using multi-resolution shape analysis
      
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Gas sensitive materials have different active energy for various gases, and the active energy will hechanged along with temperature's changing. According to this theory, a new method of knowledge acquisition is presented in this paper. By analyzing the V~t curves which obtained by experiments, hasing on the knowledge andexperience, data concourse are divided automatically. the knowledge model is constructed in self--adaptive way. Analgorithm is suggested, too. It is very important to gas sensing and properties'...

Gas sensitive materials have different active energy for various gases, and the active energy will hechanged along with temperature's changing. According to this theory, a new method of knowledge acquisition is presented in this paper. By analyzing the V~t curves which obtained by experiments, hasing on the knowledge andexperience, data concourse are divided automatically. the knowledge model is constructed in self--adaptive way. Analgorithm is suggested, too. It is very important to gas sensing and properties' expressing of the gas sensitive materials.

文章针对选定的半导体气敏材料对不同气体具有不同反应活化能,且反应温度变化时活化能变化曲线不同的特性,提出了一种知识获取方法,根据试验获得的电压峰谱图中谱线形状的分析,参照领域知识和经验,实现数据集的区间自动分段,自适应建立知识模型,并给出了相应的算法。该方法对半导体气敏材料的检测及性能表征具有十分重要的意义。

Key issues about extraction of target character in creation of IR image environment is studied. It presents a multi stage data flow that consists of three level functional modules, which are adaptive background perception and subtracting operation, selection of automatic threshold used for clutter suppression, shape analyzing and target character recognition. A morphology based data processing approach proposed in this paper is applied to background estimation. Experimental results show that the method is...

Key issues about extraction of target character in creation of IR image environment is studied. It presents a multi stage data flow that consists of three level functional modules, which are adaptive background perception and subtracting operation, selection of automatic threshold used for clutter suppression, shape analyzing and target character recognition. A morphology based data processing approach proposed in this paper is applied to background estimation. Experimental results show that the method is able to provide good filtering results and robust adaptability to image environment with clutter background.

研究了图像环境生成过程中红外目标特征信息提取所面临的重要技术问题 ,提出了自适应背景感知与对消处理、抑制背景的自动门限选取和形状分析与目标特征识别的层次化数据处理流程 .基于数学形态学理论实现了图像背景感知的应用研究算法 .实验测评表明 ,该算法对复杂变化的图像环境具有良好的滤波性能和稳健的适应能力 .

A new method of laser-induced wet etching with mask-projection,which is used to etch holes on GaAs wafer,is proposed.In this experiment,a CW 0.53 μm Nd:YAG laser,a chrome mask and H_2SO_4-H_2O_2 solution are used.By analyzing the principles of etching and the main parameters which affect the facture quality,a high quality etch hole with 30 μm diameter is gained(The condition is:(H_2SO_4∶H_2O_2∶H_2O=4∶1∶20),photon intensity=11.7 W/cm~2).And two ameliorative methods,which are important to improve the facture quality,are...

A new method of laser-induced wet etching with mask-projection,which is used to etch holes on GaAs wafer,is proposed.In this experiment,a CW 0.53 μm Nd:YAG laser,a chrome mask and H_2SO_4-H_2O_2 solution are used.By analyzing the principles of etching and the main parameters which affect the facture quality,a high quality etch hole with 30 μm diameter is gained(The condition is:(H_2SO_4∶H_2O_2∶H_2O=4∶1∶20),photon intensity=11.7 W/cm~2).And two ameliorative methods,which are important to improve the facture quality,are brought up:amelioration of instruments and reshaping the laser beam.As its advantages of exactitude and cheapness,this new method can be widely used in the area of semiconductor's minuteness machining.

提出了一种掩膜投影的激光诱导液相腐蚀方法,采用波长0.53μm的倍频Nd:YAG连续激光器、镀Cr掩膜板、H2SO4和H2O2混合溶液,在GaAs基片上制作腐蚀孔。通过对腐蚀原理的分析,对影响加工精度的溶液配比和激光功率密度进行了实验研究,得出了H2SO4∶H2O2∶H2O=4∶1∶20、激光功率密度11.7 W/cm2的最佳实验组合,并在此条件下得到了直径为30μm的高质量腐蚀孔。通过对腐蚀孔的横向与底面形状的分析,从改进实验装置和进行激光束空间整形2方面提出了改进的方法,对提高掩膜投影法的加工精度具有重要意义。

 
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