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应变补偿     
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  strain compensation
     Research on Fabrication of Polarization Insensitive Semiconductor Optical Amplifier with Strain Compensation Structure in InP Base
     InP基应变补偿结构偏振不灵敏半导体光放大器制作的研究
短句来源
     Strain Compensation Effects of Si1-x-y Gex Cy Alloys
     Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性
短句来源
     For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer.
     为了制备偏振不灵敏的半导体光放大器 (SOA) ,将有源区设计为由 4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。
短句来源
     A new control approach is presented with a "local strain compensation" and a low cutoff frequency inertial link feedback in place of the differential one.
     提出了“局部激励应变补偿”和把通常的微分负反馈改为低截止频率的惯性环节正反馈的控制新方案。
短句来源
     The results show that by control of the As composition in the materials, the strain can be controlled and good strain compensation can be reached, this is coincident with theoretical calculation.
     结果表明 ,通过对材料中的As组份调节 ,可以对材料中的应变进行控制 ,达到良好的应变补偿效果 ,实验结果和理论计算相当吻合。
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  strain-compensated
     Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers
     MOVPE生长1.3μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究
短句来源
     DESIGN AND FABRICATION OF 1.3μm UNCOOLED ALGaInAs/InP STRAIN-COMPENSATED QUANTUM WELL LASERS
     1.3μm无致冷AlGaInAs/InP应变补偿量子阱激光器设计与制作
短句来源
     Strain-Compensated InGaAs/InAlAs Quantum Cascade Laser\+*
     应变补偿InGaAs/InAlAs量子级联激光器
短句来源
     A vertical-cavity surface-emitting laser( VCSEL) structure which employs InAsP/InGaAsP strain-compensated multiple quantum wells and InP/InGaAsP distributed Bragg reflector( DBR) mirrors were grown by gas-source molecular-beam epitaxy( GSMBE) on InP( 100) substrates.
     采用气态源分子束外延(GSMBE)技术在InP(100)衬底上生长了InAsP/InGaAsP应变补偿量子阱为有源层和InP/InGaAsP分布布拉格反射镜(DBR)为上、下腔镜的垂直腔面发射激光器(VCSEL)结构。
短句来源
     Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers
     室温激射应变补偿5.5μm量子级联激光器(英文)
短句来源
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  strained compensated
     Low Threshold 1.3μm InGaAsP/InP Strained Compensated Multi Quantum Well DFB Lasers Grown by LP MOCVD
     低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长
短句来源
     Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD
     1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长
短句来源
     A 1.3 μm InGaAsP/InP strained compensated multi quantum wells structure grown by low pressure metalorganic chemical vapor deposition (LP MOCVD) was proposed.
     报道了用低压金属有机物化学气相淀积(LP-MOCVD)方法外延生长InGaAsP/InP应变补偿多量子阱结构。
短句来源
  strain-compensation
     The strain- compensation characteristics of Si1 - x - y Gex Cy ternary alloys m ade by Solid Phase Epitaxial Recrystal- lization ( SPER) are studied. Itshould be pointed out that because of the difference in both the projected range ( Rp) and the straggle of ions (ΔRp) for Ge and C,the ratio of Ge/ C is not a constant at different depth,as leads to the difference in strain- com pensation effects.
     研究了 Si1 - x- y Gex Cy 三元系材料的应变补偿特性 ,分析了固相外延方法制备的样品中注入离子的分布对应变补偿效果的影响 ,指出由于 Ge和 C的投影射程及标准偏差不同 ,二者在各处的组分比并不恒定 ,存在着纵向分布 ,因此各处的应变补偿情况也不尽相同 .
短句来源
     Gauss formula is used to analyze the strain- compensation at different position in the alloy layers. The conclusion drawn shows that the ratio of the peak densities of Ge and C ions( NGe/ NC) should be within a lim it when there ex- ists a full strain compensated area in the epitaxial layers.
     利用高斯公式对不同位置的应变补偿效果进行了分析 ,得出了外延层中存在应变完全补偿区域时 Ge、C的峰值浓度比 NGe/ NC应满足一定的取值范围 .
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  strain compensation
High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers.
      
The degree of strain compensation of the layers has been investigated by high resolution X-ray diffraction and simple application of the linear elasticity theory.
      
The computed results show that band offsets are functions of strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical gain and the threshold current density.
      
Thus, we are investigating the use of built in strain compensation in buffer layers.
      
The strain compensation of SiGe by substitutional carbon was observed by XRD.
      
  strain-compensated
Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3-1.55 μm spectral range
      
We have studied the radiative properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices, which are intended for the active regions of lasers operating at 1.3-1.55 μm.
      
Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices
      
The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied.
      
Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices
      
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