For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer.
The strain- compensation characteristics of Si1 - x - y Gex Cy ternary alloys m ade by Solid Phase Epitaxial Recrystal- lization ( SPER) are studied. Itshould be pointed out that because of the difference in both the projected range ( Rp) and the straggle of ions (ΔRp) for Ge and C,the ratio of Ge/ C is not a constant at different depth,as leads to the difference in strain- com pensation effects.
Gauss formula is used to analyze the strain- compensation at different position in the alloy layers. The conclusion drawn shows that the ratio of the peak densities of Ge and C ions( NGe/ NC) should be within a lim it when there ex- ists a full strain compensated area in the epitaxial layers.
High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers.
The degree of strain compensation of the layers has been investigated by high resolution X-ray diffraction and simple application of the linear elasticity theory.
The computed results show that band offsets are functions of strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical gain and the threshold current density.
Thus, we are investigating the use of built in strain compensation in buffer layers.
The strain compensation of SiGe by substitutional carbon was observed by XRD.
Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3-1.55 μm spectral range
We have studied the radiative properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices, which are intended for the active regions of lasers operating at 1.3-1.55 μm.
Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices
The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied.
Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices