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红外电视
相关语句
  infrared television
    The Physical Foundation of Pyroelectric Infrared Television Thermometry
    热释电红外电视测温的物理基础
短句来源
    Temperature Equation for the Pyroelectric Infrared Television Set
    热释电红外电视系统测温方程研究
短句来源
  infrared tv
    A HIGH-SENSIBILITY PEV INFRARED TV SYSTEM
    高灵敏度热释电摄象管红外电视系统
短句来源
    A Study of Signal Transfer Function of Chopping Mode Infrared TV
    斩波模式红外电视信号传递函数研究
短句来源
    Designing and Realization With A New Method For Eye Movement Measuring System Based On Infrared TV
    基于红外电视法眼动仪新方案的设计与实现
短句来源
    Taking into consideration, the expression for the signal transfer function of chopping mode infrared TV is derived. The effect of readout time on the operating characteristic of chopping mode is discussed. In order to obtain the best signal transfer function, a range of 60 ℃~70 ℃ of the readout phase angle should be selected.
    推导出在计入相位滞后时,斩波模式红外电视信号传递函数的表达式.讨论读出时间对斩波模式运行特性的影响.为了获得最佳的信号传递函数,读出相角应选定在60°~70°范围内,这能提高高空间频率时的调制度.
短句来源
    Several methods used to measure the object temperature with infrared TV are described.
    用多场平均技术提高信噪比等.介绍了使用红外电视测量目标温度的方法.
短句来源
  “红外电视”译为未确定词的双语例句
    he Calibration and Measuring Method of Temperature of Infrared Televison System
    红外电视温度标定及测温方法
短句来源
    The dark defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dar kspot defect.
    用红外电视选行扫描仪观察由不同P型掺杂剂的外延片制成的InGaAsP/InP双异质结发光管的暗缺陷,并研究了它的来源。
短句来源
    The semiconductor material integrity and the impurity and the impurity precipitation from the wafer process are discussed by using XCD-H infrared microscope with television micrometer……one of the nondestructive inspection method.
    用XCD-H红外电视测微显微镜,通过无损检测来评价半导体材料与器件工艺的质量。 本文仅对材料的完整性与芯片制造工艺导致杂质沉淀的问题进行讨论。
短句来源
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  infrared television
Infrared television pupillometry was performed in 71 healthy and 66 insulin-treated diabetic subjects.
      
  infrared tv
Autonomic nervous function was studied by infrared TV-pupillography in nine insulin-dependent diabetic subjects with 0 to 3 years duration of diabetes, during poor and good metabolic control.
      
An automatized computerized deviometer is presented based on an infrared TV camera, an image analyzer and a computer.
      


In this report, the degradation characteristics of the InGaAsP/InP DH LED's has been investigated at room temperature (15-35℃) in atmosphere ambient. Two type slow degradation of A and B was suggested. The characteristics of the output power-current, emission spectrum, thermal resistances and series resistance was observed. Tt is found that no change of these characteristics of the InGaAsP/InP DH LED's undegoes after 104 hours cw operation, except s'ow degradation for B type the normalized output power value...

In this report, the degradation characteristics of the InGaAsP/InP DH LED's has been investigated at room temperature (15-35℃) in atmosphere ambient. Two type slow degradation of A and B was suggested. The characteristics of the output power-current, emission spectrum, thermal resistances and series resistance was observed. Tt is found that no change of these characteristics of the InGaAsP/InP DH LED's undegoes after 104 hours cw operation, except s'ow degradation for B type the normalized output power value P/P0 decrease slightly about 10-20% at the beginning ageing test.An electroluminescence pattern was observed by means of infrared TV and germanimum photodiode was used as a detector. It is fcund fcr the slow degradation of A type there is no the EL pattern change after 104 hours cw operation, but for B type slow degradation with initial dark structure, there is no distingushing variation during EL pattern experiment after 8 ×103 hours cw operation.We explained the degradation mechanism of the InGaAsP/InP DH LED's by extendng defect model.

在室温(15~35℃),大气气氛中研究了InGaAsP/InP双异质结发光二极管的退化特性。有二种慢退化类型,连续工作10~4小时后,InGaAsP/InP发光二极管的电学参数、光学参数(除原有暗结构的B型慢退化器件,老化初期光功率下降10~20%外)均无明显变化。用红外电视选行扫描仪观察了老化过程中发光区的EL图象。研究了该器件的退化特性与EL图象的变化规律,找出了它们的对应关系。用扩展缺陷模型解释了InGaAsP/InP双异质结发光管的退化机理。

The dark defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dar kspot defect. The effect of the variety and concentration of the doping for p-InP confining layers on the dark defects is studied. The results show that the percentage of devices with dark defects is much lower for Mg or In-Zn doped devices than for Zn doped devices. It is believed that Zn is one of the important orign for the formation of dark defects....

The dark defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dar kspot defect. The effect of the variety and concentration of the doping for p-InP confining layers on the dark defects is studied. The results show that the percentage of devices with dark defects is much lower for Mg or In-Zn doped devices than for Zn doped devices. It is believed that Zn is one of the important orign for the formation of dark defects. The growth rate of dark defects is studied both at room temperature and at 70-85℃. The results show that after aging for 15000 h at room temperature there are no dark defects newly appeared. But after agin for 2000 h at 70-85℃ some devices show newly formed dark structure with very slow growth rate.

红外电视选行扫描仪观察由不同P型掺杂剂的外延片制成的InGaAsP/InP双异质结发光管的暗缺陷,并研究了它的来源。比较了P型掺杂剂的种类和掺杂浓度对暗结构的影响。结果表明,掺Mg和掺In-Zn合金与重掺Zn器件相比,暗结构比例明显降低。Zn可能是暗缺陷的重要来源之一。器件在70℃,85℃条件下老化2000小时后,老化前无暗缺陷的某些器件亦有暗结构产生,但其生长率很慢。

The article reviewed some domestic and foreign laser products, infrared products, TV products and certain systems products which are exhibited at ASIANDEX BEIJING'88.

本文主要评述1988年11月在北京举办的第二届国际防务技术展览会上展出的国内外激光、红外、电视产品以及系统产品。

 
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