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曝光技术
相关语句
  exposure technology
     Study of Exposure Technology for PDP Manufacturing
     PDP制造中的曝光技术研究
短句来源
     Application of γ—ay Panoramic Exposure Technology in Detection of Spherical Tank
     γ射线全景曝光技术在球罐检测中的应用
短句来源
     Introduce present situation of micro processing technology,mainly exposure technology and dry corrosion technology.
     介绍当前微加工技术现状。 主要介绍曝光技术和干蚀技术的现状和发展
短句来源
     The angular multiplexing technology for photorefractive grating and exposure technology in the formation of photorefractive multiple volume gratings are further discussed, by which eight photorefractive volume gratings in a LiNbO3:Fe crystal sample with size of 10x10x 10mm3 have been successfully recorded.
     进而探讨了体光栅的角度复用技术和多重体光栅写入过程中的曝光技术,用循环曝光法在10×10×10mm~3的块状晶体中成功地写入了8重衍射效率相近的光折变体光栅。
短句来源
     Application of Bent Exposure Technology in the Manufacture Technology of High Precision Line on Abnormity Bent Surface
     曲面曝光技术在异形曲面高精度线条制造工艺中的应用
短句来源
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  lithography technology
     When the subfield is 1mm 2 and the feature size is 100 nm,it has higher throughput using scan-step exposure strategy. PREVAIL,as well as EUVL,will be the competition of the next generation lithography technology.
     在 1mm2 子场的情况下 ,运用步进扫描曝光方式 ,在 1 0 0nm临界尺寸下具有较高的产量 ,与EUVL技术一起成为下一代曝光技术的有力竞争者。
短句来源
     Focused Ion Beam Lithography Technology
     聚焦离子束曝光技术
短句来源
     According to the current status of research and development on the lithography technology some key techniques that are promising to carry out superfine pattern with the line width of 100 nm or less are reviewed, including super resolution exposure technology, mask technology, improvement on optical system and technologies of resolution enhancement, such as off-axis illumination, phase shift mask, multiple-filter and figure mathematical calculations.
     根据国内外研究和发展现状 ,对有望突破 1 0 0nm超精细图案光刻分辨率的一些关键技术进行了阐述 ,其中包括曝光技术、掩模技术、光学系统改进和以离轴照明、相位移掩模、多重滤光和图形演算为代表的分辨率增强技术等。
短句来源
     Ion Beam Lithography Technology
     离子束曝光技术
短句来源
     As the next generation E-beam projection lithography technology,PREVAIL carries out the projection reduction exposure to the SiC membrane supported by silicon mount with variable immerssion lenses.
     PREVAIL作为下一代电子束投影曝光技术 ,采用可变轴浸没透镜 ,对以硅为支架的碳化硅薄膜进行投影微缩曝光。
短句来源
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  exposure technique
     A New Method for Fabrication of SU8 Structures with a High Aspect Ratio Using a Mask-Back Exposure Technique
     利用背面曝光技术制造大高宽比SU8结构的一种新方法(英文)
短句来源
     The basic principle and experimental system design for applying chromeless phase-shifting mask technique and double laser beam interference exposure technique to fabrication nanon-patterns grating in fiber are introduced.
     介绍将无铬相移掩模技术和双光束干涉曝光技术用于制作纳米级图形光纤光栅的基本原 理和实验系统设计。
短句来源
     The spectrum of fiber Bragg grating can be controlled by double exposure technique.
     该方法只使用普通Bragg位相模板,采用两次曝光技术,通过控制光纤光栅的本地谐振波长和反射率,达到控制光纤光栅谱形的目的.
短句来源
     Step-and-Repeat Reducing Project Exposure Technique Used for the Mask Fabrication of SAW Devices
     分步重复缩小投影曝光技术在SAW器件制版工艺中的应用
短句来源
     based on LabVIEW6.0,the new method of determining the grating parameters has been presented. The flowchart and the complement of the software are given. By adopting the double exposure technique,with a uniform phase mask and Gaussian laser beam being used,the uniform FBG used in DWDM system Is designed and engraved,and the crosstalk is eliminated.
     分析了用于DWDM系统中的光纤光栅的设计原理 ,采用LabVIEW 6.0确定光栅参数 ,给出了具体的软件算法流程及其实现的方法 ,给出采用二次曝光技术抑制旁瓣消除邻信道串扰的方法 ,所设计和刻制的光栅完全满足DWDM系统的要求
短句来源
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  “曝光技术”译为未确定词的双语例句
     Double-Exposure Technique to Improve Lithography Quality
     提高光刻图形质量的双曝光技术
短句来源
     Study of Narrow Electron-Beam Liquid Lithography for MEMS
     MEMS的细电子束液态曝光技术研究
短句来源
     High-resolution and good flexibility are remarkable advantages of this technology.
     电子束曝光技术的显著优点就是分辨率高,灵活性强,容易获得亚微米分辨率的精细图形。
短句来源
     The experimental results show that the double-exposure can not only obtain directly the phase information, where it doesn' t need laser reconstruction, but also gives quantitative results.
     实验结果表明两次曝光技术不但能直接获取位相信息,不需要激光再现,而且能给出定量结果.
短句来源
     The hydrogen doping fiber was exposed to modulated excimer laser beam by using a amplitude mask. Then long-period fiber gratings with 400 μm period were obtained. By measuring its transmit spectrum, we found that there were four absorption peaks at 1. 465μm, 1. 480μm, 1.508μm and 1.525μm respectively.
     利用准分子激光振幅掩膜调制曝光技术,制出了周期为400μm的长周期光纤光栅.通过对其透射光谱测试,观察到它在1.50μm附近具有四个吸收峰,峰值中心位置分别为1.465μm,1.480μm,1.508μm和1.525μm,平均半高宽约15μm.
短句来源
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  exposure technology
Interface specifications are defined for masks, substrate and resist, exposure technology, development and finally electroplating.
      
  lithography technology
Based on the study, we could use only x-rays from the synchrotron radiation so as to apply x-ray lithography technology (such as using an x-ray mask and processing in He atmosphere) to our process.
      
While 32?nm lithography technology is on the horizon for integrated circuit (IC) fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit.
      
However, resist material and their processing are also important when we move to a shorter wavelength lithography technology.
      
Extreme ultraviolet lithography (EUVL) is a leading lithography technology for the next generation of semiconductor chips.
      
The fabrication of diamond nanopatterns by electron cyclotron resonance (ECR) oxygen plasma with a composite metal octylate mask was investigated using electron beam lithography technology.
      
更多          
  exposure technique
Serial exposure technique for assessing performance of wood preservatives
      
The performance of copper-chrome-arsenate (CCA) and two quaternary ammonium compounds as wood preservatives was compared using a serial exposure technique, involving successive 10-week exposures in conventional soil jars.
      
Examination of data from field stake tests suggested that a series of toxic thresholds established by a serial exposure technique could be related to preservative retentions which protect wood in the field from decay for increasing periods of time.
      
With CR, in addition to proper radiographic exposure technique, one needs to preprogram and select the optimal processing technique for each anatomic region, projection and age group of the child.
      
Dose management obviously starts with characterization and control of the exposure technique.
      
更多          


Step-and-repeat reducing project exposure technique may be used to cover a rather large area delineated with fine lines using available lenses and "dividing and ruling" method. The photo-masks of some high f requency SAW devices are fabricated in this way, the performances of such devices are satisfactory.

分步重复缩小投影曝光技术是一种采用现有的光学镜头,通过“分而治之”,达到以较细线条覆盖较大面积的手段.本文介绍采用这项技术制作出的几种SAW高频器件掩模,用它刻出的器件,获得了良好的性能.

As a supplementary SEM operational mode, absorbed current imagery (ACI) is used to provide clear images for some topological details of homogeneous and electrically inert materials by double exposure. They are usually invisible on secondary electron images. The element distribution on the surface of heterogeneous alloys with smoother appearance and the electron effect of potential barrier in semiconducting materials are observed on ACI. Experimental results show that ACI has very wide application.

本文用吸收电流信号作为附加的操作模式,用二次曝光技术对均匀的电惰性材科(electrically inert materials)的二次电子象中不易得到的形貌细节补偿,获得了清晰的图象。对表面比较平滑的多相合金,用吸收电子象定性地观察了其表面的成分分布。还观察了半导体材料中势垒电子伏特效应对吸收电子象的影响。实验结果表明,吸收电子象有十分广泛的应用。

The discrete space charge effects in a charged-particle beam have aroused great theoretical interest in recent years becauce they have practical significance for electron and ion beam lithography. This paper discusses the nature methods of calculation for the discrete space charge interactions and the Boersch effect and the beam spreading effect which are caused by these interactions. The simplified analytical theories based on the two-particle interaction model give useful general qualitative results. The numerical...

The discrete space charge effects in a charged-particle beam have aroused great theoretical interest in recent years becauce they have practical significance for electron and ion beam lithography. This paper discusses the nature methods of calculation for the discrete space charge interactions and the Boersch effect and the beam spreading effect which are caused by these interactions. The simplified analytical theories based on the two-particle interaction model give useful general qualitative results. The numerical simulation methods based on the multi-particle interaction model can provide more accurate results and are applicable to practical electron and ion beam lithography systems.

带电粒子束中的离散空间电荷效应近来引起了很大的理论兴趣,并对电子与离子束曝光技术有重大实际意义.本文讨论了离散空间电荷相互作用及其导致的Boersch效应及束斑扩宽效应的基本物理特征和计算方法.基于两体相互作用的简化理论分析得出了具有一般意义的定性结果.基于多体相互作用的数值模拟方法对于实际的电子和离子束曝光系统可能给出较精确的、有实际应用价值的结果.

 
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