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曝光剂量
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  exposure dose
     In four different experiments,the characteristic width of photo masks were 50 μm,100 μm,200 μm and 400 μm,respectively,and the exposure dose on the surface of SU-8 photoresist was 400 mJ/cm2.In the experiments,the silicon was chosen as substrate.
     实验分四组,实验中掩模的特征宽度分别取50μm、100μm、200μm和400μm,SU-8胶表面的曝光剂量取400 mJ/cm2。
短句来源
     (2) Exposure dose should be changed with the thickness of SU-8 photoresist.
     (2) 根据SU-8胶的厚度确定曝光剂量的大小。
短句来源
     Exposure dose control for step-and-scan lithography
     步进扫描投影光刻机中的曝光剂量控制技术研究
短句来源
     All the patients were divided into three groups(180 cases in each group respectively) to detect the image quality and density with different combination of exposure dose.
     以所得成像数据和两种规格的IP板,对A、B、C三组患者(每组各180例),不同部位摄影,检测不同曝光剂量组合摄影的影像质量和影像的密度值。
短句来源
     Conclusion The image quality of direct digital radiography system is improved as the exposure dose increases, and as the exposure dose exceeds a certain threshold, the image quality will not change apparently.
     结论直接数字化X射线摄影时通过增大照射剂量可以提高影像质量,但是当曝光剂量达到足够大时,再增大曝光剂量并不能显著改善图像质量,影像质量与曝光剂量间存在一个优化剂量。
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  exposing dose
     Methods 26 patients with lung metastasis were selected to scan by CT with four kinds of different protocols , including 195 mAs /6.5mm ( exposing dose/scan thickness ) ,195 mAs/3.2 mm,50 mAs/3.2 mm,30 mAs/3.2 mm in all,then the number,size,position of nodules detected with dfferent dose were calculated respectivly.
     方法 选择肺转移瘤 2 6例 ,分别应用 195mAs / 6.5mm(剂量 /层厚 ) ,195mAs/ 3 .2mm ,5 0mAs/ 3 .2mm ,3 0mAs/ 3 .2mm 4种方案扫描肺部 ,统计在不同曝光剂量条件下检出的肺结节的数量、大小、部位。
短句来源
     Results The total number of lung nodules detected with 195 mAs/3.2 mm,50 mAs/3.2 mm and 30 mAs/3.2 mm were no significant difference,but when classificated according to their size,as the exposing dose decreased,the number of nodules under 2 mm or 5 mm was detected decreasingly,morever,the noise of image increased.
     结果  195mAs/ 3 .2mm ,5 0mAs/ 3 .2mm ,3 0mAs/ 3 .2mm组之间的肺结节检出数在总体上无显著差异 ,但按肺结节大小分类分析时 ,随曝光剂量的降低 ,对 <2mm和 5mm的肺结节的检出数有所减少 ,并且低剂量下 ,图像噪声明显增加。
短句来源
     The Influence of Low Exposing Dose on Detecting Lung Nodules by CT
     低曝光剂量对CT检出肺结节的影响
短句来源
     26 patients with lung metastasis were selected to scan by CT with defferent protocols, including 195 mAs /6.5mm (exposing dose/scan thickness), 195 /3. 2, 50 /3. 2, 30 /3. 2 in all. Then add up the number , size , position of nodules detected with dfferent dose respectivly.
     选择肺转移瘤26例,分别应用195mAs/6.5mm(剂量/层厚),195/3.2,50/3.2,30/3.2扫描肺部,统计在不同曝光剂量条件下检出的肺结节的数量、大小、部位。
短句来源
     The third part: Investigate the influence of different exposing dose to the quality of image.
     第三部分:评价不同曝光剂量扫描下的图像质量。
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  writing dose
     Another experiment about the dependence of electrons'penetration depth on different writing dose has also been carried out at 5 keV, 30 keV.The relation of dose/etching depth is obtained.
     用5keV、30keV两种能量的电子束,通过改变曝光时间进行了曝光剂量对刻蚀深度的影响实验,得出了曝光剂量-刻蚀深度关系曲线。
短句来源
     The results show that the electrons'penetration depth can be increased by increasing electron energy or writing dose, and that LIGA based on Electron Beams is suitable for producing micro three-dimensional profiles with different curvature in resist.
     实验结果表明,增大电子束能量或增强曝光剂量,就可以增大刻蚀深度,证明了基于电子束光刻的LIGA技术不但是可行的,而且更易于加工各种带曲率的微器件。
短句来源
  “曝光剂量”译为未确定词的双语例句
     In 2.5~3.2 L.P/mm, the dose exposure of IP plate was 50%~75% of average speed intensifying screen-film and 220%~290% of green screen-film,the mean dose equivalent of IP plate was 37%~66% of midvelocity screen-film and 190%~270% of green screen-film.
     在2.5~3.2L. P/mm范围内,IP板的曝光剂量分别是中速屏-片的50%~75%、感绿屏-片的220%~290%,剂量当量均值又分别是中速屏-片的37%~66%、感绿屏-片的190%~270%。
短句来源
     CONCLUSION: Low dose (10mm collimation, 10mm interval, 120KV, 50mA) scan mode isure the image quality and low exposure and expense.
     结论:采用10mm层厚、10mm间隔、120kV,50mA低剂量扫描既可保证显示咽部病变的影像质量,又可降低病人的曝光剂量
短句来源
     Conclusion In examining the pharyngeal disease,the application of low dose(120 kV,50 mA) scan mode not only can assure the image quality but can decrease the exposure to patients.
     结论120kV,50mA低剂量扫描既可保证咽部病变的影像质量,又可降低病人的曝光剂量
短句来源
     Conclusion In 2.5~3.2 L.P/mm, both dose exposure and mean dose equivalent of IP plate are lower than that of average speed intensifying screen-film about 1/2~3/4 times of mAs and 1/3~2/3 times of mSv; but higher than that of green screen-film about 2~3 times of mAs, 2~3 times of mSv.
     结论在2.5~3.2L. P/mm内,CR的曝光剂量和剂量当量均值比中速屏-片低约1/2~3/4倍mAs、1/3~2/3倍mSv,但比感绿屏-片高约2~3倍mAs、2~3倍mSv。
短句来源
     An experiment has been made to cure oligomer Trihydroxy Methyl Propane Tri Acrylate(TMPTA) in SDS-II at (20 kV) and 2 _C/cm~2 dose.
     在此基础上使用SDS-II型曝光机在20kV的加速电压、2μC/cm2的曝光剂量下,对经真空挥发处理过的三羟甲基丙烷三丙烯酸酯(TMPTA)液态低聚物进行了曝光试验,得到了固化结构。
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  exposure dose
It is shown that the use of a metal-dielectric cathode allows generation of x rays with nonuniformity of the intensity distribution within limits of 10% at an energy of quanta no higher than 55 keV and a radiation exposure dose 160 mR.
      
The minimum resolution was 0.5 μm at the exposure dose 8 x l0-4C/cm2.
      
The minimum exposure dose at which separate lines are developed was equal to 1 x 10-4 C/cm2
      
By variation of the exposure dose the height of the grafted structures can be adapted in a wide range.
      
Auger spectroscopy reveals an increasing carbon coverage of the surface as the exposure dose of C60+ increased until saturation is reached.
      
更多          
  writing dose
Guideline for Writing Dose Correct Method Incorrect Method Do not write total dose for the whole course.
      


By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography. All the precompensative and effective doses are depited by three dimensional graphes. The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam.

将付里叶变换法运用于电子束曝光的邻近效应校正中,形成了快速、准确的剂量校正法。给出了描述预校正剂量和有效曝光剂量计算结果的三维图形。在电子束曝光胶图形的三维显影模拟工作中,首次使用了最精确的三维线踪模型。

This paper introduces an experimental method for optimizing the exposure dose in e-beam lithography. The application and structure of experimental patterns are also described. Finally, the results of selecting the optimum exposure dose for two kinds of electron positive resists and the photos of LSI masks fabricated by this method are given

本文介绍一种选择电子束最佳曝光剂量的实验方法。详细叙述了实验图形的结构和用法。最后,给出了用本法对两种正性电子抗蚀剂选择最佳曝光剂量的结果和制作的大规模集成电路掩模版的照片。

Experimental investigations on soft x^ray lithography technology using synchrotron radiation x-ray lithography apparatus of BEPC is presented in this paper. Based on the studies of the effects of various experimental conditions including exposure dose of x-ray, different masks and photoiesists etCf the optimum process suitable to present situations has been obtained. Using the masks fabricated in our laboratory, sub-micron patterns with rhe line width as narrow as 0.3nm and deep structure of photoresist with...

Experimental investigations on soft x^ray lithography technology using synchrotron radiation x-ray lithography apparatus of BEPC is presented in this paper. Based on the studies of the effects of various experimental conditions including exposure dose of x-ray, different masks and photoiesists etCf the optimum process suitable to present situations has been obtained. Using the masks fabricated in our laboratory, sub-micron patterns with rhe line width as narrow as 0.3nm and deep structure of photoresist with the thickness of 36nm have been obtained.

本文介绍利用北京正负电子对撞机同步辐射软X射线光刻装置进行亚微米X射线光刻技术和深结构光刻的实验研究。通过对曝光剂量、掩模、抗蚀剂等工艺实验,初步得到适合于目前条件的较好的同步辐射X射线光刻工艺条件,并光刻出0.3μm的亚微米图形和抗蚀剂厚度为36μm深光刻图形。

 
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