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晶体管电路     
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  transistor circuit
     The Method to Calculate Power Series of Non-linear Transistor Circuit
     计算非线性晶体管电路幂级数的方法
短句来源
     The Application of Transistor Circuit in Relay Protection
     浅谈晶体管电路在继电保护中的应用
短句来源
     The electric characteristics of 1GHz microstrip active filters,using inductive microwave transistor circuit,were mea- sured.
     对由感性微波晶体管电路构成的1GHz 微带有源滤波器的特性进行了测试。
短句来源
     In this paper, we set forth the equivalent models of transient γ radiation effects on pn junction diodes and bipolar transistors, the methods for determining its parameters, and the calculated transient γ radiation effects on the bipolar transistor circuit.
     在PC上开发了双极型晶体管电路瞬态γ辐照效应的模拟计算程序M-TRACII,建立了相应器件模型参数的测试方法,并进行双极型晶体管线路瞬态γ辐照效应实验验证工作;
短句来源
     The zero voltage trigger for thyristor can be realized with simple transistor circuit.
     单向晶闸管的电压过零触发可利用简单的晶体管电路
短句来源
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  transistor circuits
     Quick writing method for mathematical equation of linear transistor circuits
     线性晶体管电路数学方程快速列写法
短句来源
     Using Indeterminate Admittance Matrix to Analyse the Conversion of y-Parameters of Transistor Circuits Configuration
     利用不定导纳矩阵分析晶体管电路组态y参数的转换
短句来源
     First of all,this paper explains through diagrams the working principles of the receivers and the transmitters of the made 10-Watt Short Wave SSB Radio Com- munication Transmitter-Receivers. The trasmitter-receivers which use transistor circuits and integrated circuits can receive and transmit both SSB radiotel ephone and SSB radiotelegram.
     本文首先对试制的晶体管电路和集成混合电路的10瓦短波单边帝(SSB—Single SideBand)无线电通信电台(可以收、发话或报)的收信机和发信机的工作原理用方框图进行了说明;
短句来源
  “晶体管电路”译为未确定词的双语例句
     These circuit models also adapt to the static and dynamic analysis.
     用于晶体管放大电路静态分析和动态分析的晶体管电路模型是这一模型的特殊情况。
短句来源
     A Method to Structure Circuit Models for Transistor Based on the Ports' V-I Characteristics
     一种基于外部特性的晶体管电路模型的构建方法
短句来源
     With the introduction of the basic PDM circuit and PANTEL method common in valve circuits into transistorized circuits, it is shown that it is feasible to use PDM in the transistor audio frequency modulator.
     本文将应用于电子管电路的基本PDM电路以及PANTEL方法引用到晶体管电路,证明晶体管音频调制器采用脉宽调制方式是可行的.
短句来源
     Operating at the radio frequency of 24.4 MHz, and built with a miniature magnet, transistor and integrated circuits and a timer generating a three-pulse sequence, this spectrometeter is small in size, cheap in cost, and convenient for rhc measurement of the spin-lattice relaxation time and the spin-spin relaxation time.
     这台谱仪使用了小型磁铁,电子线路采用集成电路和晶体管电路,射频为24.4MHz,程序器为三脉冲序列,故装置小巧,造价低廉,便于用来测定自旋—晶格弛豫时间和自旋—自旋弛豫时间.
短句来源
     A method using a short microstrip of one fourth or one eighth wavelength tuning to decrease the size of the microstrip circuit is emphatically discussed, because the dimension of the microstrip circuit at low frequency band of the microwave is inconvenient in application.
     通常用微带电路进行微波晶体管电路设计时,在微波的低频段,微带电路的尺寸比较大,给使用带来不便,为了缩小几何尺寸,本文着重讨论利用短微带线加以电抗支节调谐,作微波晶体管放大器级间匹配的设计方法。
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  transistor circuit
The calculated longitudinal-transverse nonlinear susceptibility determines the conditions needed for creating an efficient field-effect transistor circuit that would use pumping in the terahertz range instead of a transverse control voltage.
      
The influence of envirommental impedances on tunneling rates in a single electron transistor circuit is investigated.
      
Using the proposed techniques, all solutions of nonlinear equations (including a system of 100 nonlinear equations and a system with strong nonlinearity which describes a transistor circuit) could be found very efficiently.
      
Each two opamp and six MOSFET transistor circuit simultaneously achieves four-quadrant multiplication and division.
      
The paper describes a self-biased CMOS transistor circuit with two outputs providing the transistor threshold voltages, VTP and -VTN.
      
更多          
  transistor circuits
In this device, the dynistors are triggered by the current, which is formed using parallel control transistor circuits and low-power shunting capacitors.
      
We present a comparison of the results obtained from applying the three reliability simulation algorithms to amorphous silicon thin-film transistor circuits.
      
Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices
      
Investigating the thermal stability of transistor circuits with a high input resistance
      
Analysis and design of diode, bipolar junction and field effect transistor circuits.
      
更多          
  transistor circuitry
In general, for use in amplifiers bipolar transistor circuitry is superior to CMOS.
      


Editor's Note: In recent years, the broad masses of teachers at our university have been going deep in practice and learning from workers, peasants and soldiers. They first abolished their old textbooks and then retained what is useful in it in a critical way. Innovating through practice, they have written a series of new textbooks, among which "Transistor Circuits" is one. The editing group of this textbook considers the suppression of drift plays an important role in the production of a high quality d. c....

Editor's Note: In recent years, the broad masses of teachers at our university have been going deep in practice and learning from workers, peasants and soldiers. They first abolished their old textbooks and then retained what is useful in it in a critical way. Innovating through practice, they have written a series of new textbooks, among which "Transistor Circuits" is one. The editing group of this textbook considers the suppression of drift plays an important role in the production of a high quality d. c. amplifier. The old textbooks did not offer any realistic solution to this problem which arised from production. Some authors(1)(2) have discussed this problem, but they all end up fundamentally at the same level of the equation (4-20) referred to in the new textbook. This equation tells the relationship between drift and some transistor parameters, but fails to explain it in a quantitative way. In order to enable the students to acquire knowledge that can guide them through productive activities, the editing group, with the help of the latest achievements of scientific works at home and abroad, have clarified the above mentioned quantitative relationship after carrying out a series of experiments. This attempt of theirs in the field of educational revolution has enabled them to write the following as a section of the "Transistor Circuits".

几年来,我校广大教师深入实际,向工农兵学习,对旧教材破字 当头,在批判中继承,在实践中创新,初步编写了一批新教材。下面选载的是 新编教材《晶体管电路》中的一节。 该书的编写组认为,抑制零点漂移是制作高质量直流放大器的一个重要课 题。旧教材对于这样一个从生产中提出来的问题并未切实解决。有些专 著[1],[2]讨论了这个问题,但基本上与本文公式(4-20)相似。这个公式从理 论上解释了零点漂移与晶体管若干参数之间的关系,可是仍然没有给出零点漂 移与晶体管选配要求之间的定量关系。为了使学员学到的知识对生产实践确有 一定的指导意义,他们吸收了国内外著作中较新的科学内容,并通过实验,初 步弄清了上述关系,在教育革命的实践中写出了这部分新教材。

How to obtain the current pulse fed to the winding of the power step motor approaching to rectangle is discussed. A new control method, the pulse-regulation method, is proposed and a transistor circuit is designed. Some preliminary experimental results are thereby given.

本文阐述如何使功率步进电动机中绕组的脉冲电流逼近矩形波。为此,提出了功率步进电动机的新的驱动方法——脉冲调整法,并提供了晶体管电路和初步实验结果。

Both small-signal transistor models of the T-and hybrid-π types are compared on the basis of an analysis about the basewidth modulation of the IC transistors. It is shown that, in applications to those transistor circuits having active loads such as that in the integrated operational amplifiers of the 2nd generation, the T-model will give wrong resultsdue to its omission of the most important part of the basewidth modulation effect, although the hybrid-π model has certainly omitted a less important part of the...

Both small-signal transistor models of the T-and hybrid-π types are compared on the basis of an analysis about the basewidth modulation of the IC transistors. It is shown that, in applications to those transistor circuits having active loads such as that in the integrated operational amplifiers of the 2nd generation, the T-model will give wrong resultsdue to its omission of the most important part of the basewidth modulation effect, although the hybrid-π model has certainly omitted a less important part of the basewidth modulation effect, the error so introduced is almost negligible in all practical cases.

在分析集成晶体管基区宽变效应的基础上,对比了T型和混合π型这两类晶体管交流小信号等效电路。指出,在应用到像第二代集成运放这类采用有源负载的晶体管电路中时,T型等效电路由于对基区宽变效应作了过份的省略而给出不正确的结果。反之,混合π型等效电路由于保留了这一效应的主要部分而能给出基本正确的结果。混合π型等效电路确实也忽略了基区宽变效应的某些次要部分。但是,在实际有用的情况中这样做引起的误差是微不足道的。

 
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