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耦合光栅
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  coupling grating
     RESEARCH AND FABRICATION FOR 1.55μm COUPLING GRATING APPLIED TO DFB LASERS
     1.55微米DFB激光器耦合光栅的研制
短句来源
     Fabrication of Grating Waveguide and Coupling Grating Using Two-photon Initiated Photopolymerization
     利用双光子聚合技术制备的聚合物型光栅光波导和耦合光栅
短句来源
  “耦合光栅”译为未确定词的双语例句
     Diffraction Self-Enhancement by Two Wave Mixing of Femtosecond Pulse in LiNbO_3∶Fe
     LiNbO_3∶Fe晶体中飞秒二波耦合光栅衍射自增强现象
短句来源
     Fabrication of Quantum Well Infrared Photodector Focal Plane Array Coupled with 2-D Diffraction Grating
     带耦合光栅的量子阱红外探测器研制
短句来源
     A method for determing the refractive index and thickness of InGaAsP/InP epitaxial layersusing the optical waveguide grating coupler is presented.
     本文报道一种应用波导耦合光栅测量InGaAsP/InP外延薄膜折射率与厚度的方法。
短句来源
     The LM Algorithm is not only effective for weakGrating but also strongGrating designing, Which break through the limit of some other algorithms.
     LM算法不仅适用于设计弱耦合光栅,它同样可用于强耦合光栅的设计,这突破了以往一些算法只能设计弱耦合光栅的局限性。
  相似匹配句对
     Grating Coupling for Nonlinear Waveguide
     非线性导波光栅耦合
短句来源
     THE TWO-MODE COUPLING THEORY OF UNIFORM FIBER GRATING
     均匀光栅中的双模耦合
短句来源
     Ultrasonic Grating
     超声光栅
短句来源
     Discussinos for jj Coupling
     讨论jj耦合
短句来源
     Measuring Optical Density of Gratings
     光栅光密度测试
短句来源
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  coupling grating
However, approaching a pump wavelength of 980 nm, we observe SH light propagating backwards in the direction of the coupling grating.
      


A method for determing the refractive index and thickness of InGaAsP/InP epitaxial layersusing the optical waveguide grating coupler is presented. The advantages of this methodare of the high measuring accuracy, no mechanical damage to the film, and it is timely for thetechnological process. The deduced accuracys of the refractive index and thickness of the filmare±0. 002 and ±0. 01μm, respectively. They are quite sufficients for the designing of theDFB, DBR semiconductor lasers or active optical waveguide devices....

A method for determing the refractive index and thickness of InGaAsP/InP epitaxial layersusing the optical waveguide grating coupler is presented. The advantages of this methodare of the high measuring accuracy, no mechanical damage to the film, and it is timely for thetechnological process. The deduced accuracys of the refractive index and thickness of the filmare±0. 002 and ±0. 01μm, respectively. They are quite sufficients for the designing of theDFB, DBR semiconductor lasers or active optical waveguide devices.

本文报道一种应用波导耦合光栅测量InGaAsP/InP外延薄膜折射率与厚度的方法。该法测量精度高,具有非破坏性与工艺实时性优点。外延薄膜折射率与厚度测量精度分别可达到±2×10~(-3)与±1×10~(-2)μm,这完全满足DFB与DBR等一类半导体激光器以及有源导波光学器件的设计需要。

Holographic coupling gratings have been frabricaed on the Red SensitivePhotopolymer(RSP) holographic plate with holographic technology.Optical signal iscoupled along the total internal reflection anSle inside the light-guiding plate and coupled outby the coupling gratings.The one by one point optical interconnections has been realized, itscoupling efficiency is 25 %.

用全息术在光致聚合物全息于版上制备出全息耦合光栅。将光信号耦合进玻璃光导板中,使其在光导板中全反射,以锯齿形式传播。再经出射光栅耦合出来。在光导板上实现1点对1点的光互连,互连效率约为25%。

Abstract Partially gain-coupled MQW-DFB lasers with loss gratings have been successfully fabricated by using LP-MOCVD and LPE. A photograph of SEM taken after overgrowth on loss gratings demonstrates clear outline of epitaxy layers and almost perfect shape of the gratings, which indicates the phosphine protection is effective for gratings surface during the temperature increasing process just before crystal forming. The broadarea chips perform single longitudinal mode even over 2Ith under pulse currnet. The...

Abstract Partially gain-coupled MQW-DFB lasers with loss gratings have been successfully fabricated by using LP-MOCVD and LPE. A photograph of SEM taken after overgrowth on loss gratings demonstrates clear outline of epitaxy layers and almost perfect shape of the gratings, which indicates the phosphine protection is effective for gratings surface during the temperature increasing process just before crystal forming. The broadarea chips perform single longitudinal mode even over 2Ith under pulse currnet. The stripe lasers work continually at room temperature with the threshold current from 22mA to 35mA and without any evidence of saturated absorption. The single mode yield is high and the side mode suppression ratio (SMSR) is over 37dB.

采用LP-MOCVD和LPE相结合,成功地研制出了吸收型部分增益耦合MQW-DFB激光器.扫描显微镜照片显示了清晰的被掩埋的吸收型增益耦合光栅,表明光栅掩埋生长前升温过程磷烷的保护是成功的.宽接触(broadarea)脉冲电流大范围单纵模工作,条型器件室温连续直流工作阈电流为22mA至35mA,单模成品率高,边模抑制比(SMSR)超过37dB,没有观察到饱和吸收现象.

 
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