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新型器件
相关语句
  new device
    A New Device in Use for Radiation Dosimeter
    一种可用于辐照剂量计的新型器件
短句来源
    Eda's New Device and Application
    EDA的新型器件及其应用
短句来源
    epitaxial Si1-xGex/Si system may also be used in many new device architectures at these days, such as strained Si-CMOS devices, modified doping field effect transistor(MODFET), quantum well metal-oxide-semiconductor field effect transistor(QWMOSFET),etc.
    外延Si_(1-x)Ge_x/Si系统在某些新型器件结构,如应变硅(strained Si)CMOS器件,调制掺杂场效应晶体管(MODFET),量子阱金属-氧化物-半导体场效应晶体管(QWMOSFET)等也可能得到应用。
短句来源
    Because neuron MOS transistor is a kind of new device, PSpice simulate software can't process it directly. The PSpice equivalent circuit model of neuron MOS transistor is completed by the ABM function of the PSpice simulate software. The efficiency and accuracy of this model is verified by plenty of experiments.
    鉴于神经MOS晶体管是一种新型器件,PSpice电路仿真软件无法对其进行直接仿真,于是本文利用PSpice仿真软件中的ABM(模拟行为建模)功能建立了神经MOS晶体管的等效PSpice模型,并用大量的仿真实验证明了此等效模型的有效性和准确性。
短句来源
    But now the research on new device and new technology is too few to guide applying and designing this novel system.
    但是对于新型器件和新技术在该系统的应用研究甚少,尚缺乏对实际应用过程中系统设计的理论指导。
短句来源
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  novel device
    The Integrated Gate Commutated Thyristor(IGCT):A novel device for high power applications
    一种在大功率范围内有广泛用途的新型器件IGCT
短句来源
    FIFO is a novel device with characteristics of low cost, large content, but its control is fairly complex.
    本系统采用的FIFO是一种基于DRAM内核的新型器件,具有成本低、容量大的特点,但控制复杂。
短句来源
    The Monte Carlo method is often used in novel device simulations. It provides a useful tool for the analysis, and understanding of semiconductor devices.
    蒙特卡罗方法经常应用于新型器件的模拟,是分析、了解半导体器件的有力工具。
短句来源
    The EPLD (Erasable Programmable Logic Device)is a novel device that was rapidly developed in the late 1980's. It has become an important memmber of the ASIC family due to its unique characteristies, good privacy,short design cycle and low cost.
    EPLD(Erasable Programmable Logic Device,可擦除可编程逻辑器件)是国外八十年代后期迅速发展起来的一种新型器件,因其独有的特性和保密性,兼之设计周期短、价格低而成为专用集成电路家族中的一个重要分支。
短句来源
    Fiber grating coupler is a novel device developed based on fiber grating and fiber coupler.
    光纤光栅耦合器是以光纤光栅和光纤耦合器为基础发展起来的一种新型器件
短句来源
  novel devices
    NOVEL DEVICES AS WELL AS SUPER-THIN LAYER HETERO-EPITAXIAL MATERIALS AND SURFACE/INTERFACE INVESTIGATIONS
    新型器件及其超薄层异质外延材料和表面、界面研究
短句来源
    The device structure design for nanometer CMOS is analyzed. Several altrnative novel devices adapting for this era are discussed systematically, including SOI MOSFET, Double-gate and surrounding-gate MOSFET, recessed channel MOSFET, dynamic threshold MOSFET and low temperature CMOS, which are leading us approaching the ultimate limit of MOS device development.
    分析了纳米CMOS器件结构的设计 ,讨论了用于纳米尺寸的新型器件结构 ,包括SOICMOS、双栅和环栅MOSFET、凹陷沟道MOSFET、动态阈值MOSFET以及低温CMOS ,它们可能把我们带至硅器件设计的最远极限。
短句来源
    With the advantages of small volume, light weight, high reliability and so on, millimeter wave solid device and module technology have played an important role in the field of millimeter wave technology. The developing course from diodes to MESFET, further to the novel devices such as PHEMT, HBT etc was presented in the paper. The progress of MIMIC and MMCM technology was also introduced here.
    毫米波固态器件及模块技术由于其体积小、重量轻、可靠性高等优势,已在毫米波技术领域逐步占据了重要地位,本文重点介绍了从雪崩管、耿氏管、隧道管等两端器件到三端器件MESFET,再到新型器件,如PHEMT,HBT等的发展历程,以及毫米波集成电路技术和毫米波模块电路技术的进展情况。
短句来源
    The photonic crystal is also named photonic bandgap(PBG)and used to describe the man-made periodic electrical structure with some PBG. Its theoretical basis is the electronic energy band theory(the electronics in semiconductors has the bandgap). Special attention has been paid to application of the materials with PBG structures in microwave engineering,and many novel devices have come out.
    光子晶体又称光子带隙,是指具有一定光子带隙的人造周期性电介质结构,其理论依据来源于电子能带理论(半导体中的电子存在禁带),人们对光子带隙结构在微波工程中的应用给予了特别的关注,PBG结构的材料在微波集成电路的应用中造就了许多新型器件
短句来源
  “新型器件”译为未确定词的双语例句
    New Generation of Promising Device: Vacuum Microelectronic Device
    一代前景诱人的新型器件——真空微电子管
短句来源
    Inexpensive Photoelectric Experiments on New Type Devices
    廉价的新型器件的光电实验
短句来源
    While, the anode modification devices, which fabrication is ITO/ZnO/NPB/ALQ 3 /AL, is much better than the older in the light-efficiency and have a higher break-down voltage.
    通过对比实验把这两种新型器件的发光特性曲线与原始器件ITO/NPB/ ALq 3 /AL的特性曲线作对比。
短句来源
    In the paper,a design method of ADC with new devices is presented based on the mathematical principle of converting decimal digit to binary digit .
    但由于采用传统器件设计转换速度不高 ,为此 ,在十进制数转化为二进制数的数学原理基础上提出一种采用新型器件的 A DC电路设计方法。
短句来源
    Semiconductor Transient Voltage Suppressor
    保护电路中的一种新型器件─—半导体抗电涌器件
短句来源
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  new device
A New Device for On-Line Dynamic Sorption Preconcentration
      
The new device was tested in the analysis of model vapor-gas mixtures of benzene, toluene, ethylbenzene, and o - xylene.
      
The new device was tested in the analysis of model vapor-gas mixtures of benzene, toluene, ethylbenzene, and o-xylene.
      
We propose a new device for computing dominant real roots and compare it with other methods.
      
The new device was built into one of the parts of the spectrograph and allows the work of observers to be facilitated significantly.
      
更多          
  novel device
Several examples of novel device structures developed with the use of the method are presented.
      
There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.
      
A novel device for rapid testing of non-contact acting insecticides and their mode of action
      
Correspondence in the IKDC rating was 63% using a standard goniometer, 50% with the long arm goniometer, and 96% using the novel device.
      
A novel device enabling headspace SPME (HS-SPME) sampling through a cannula was designed, refined, and used to collect rumen gas samples from steers.
      
更多          
  novel devices
The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro-and nanoelectronics are described.
      
New pilot data from novel devices to move the wrist demonstrate benefit and suggest that successive improvement of the function of the arm progressing to the distal muscles may eventually lead to significant disability reduction.
      
New pilot data from novel devices to move the wrist demonstrate benefit and suggest that successive improvement of the function of the arm progressing to the distal muscles may eventually lead to significant disability reduction.
      
Finally we comment on the application of novel devices offering variable polarization.
      
GaAs has excellent optical, electrical, and mechanical properties and shows promise to be used in the fabrication of novel devices.
      
更多          


An X-band GaAs oscillators FET especially designed for use in various microwave solid state oscillatory circuit is more suitable for X-band GaAs FET VCO and DRO FET oscillators.

X波段GaAs场效应振荡管是一种专门用于各种微波固体振荡电路的新型器件,尤其对X波段GaAsFET电压控制振荡器(VCO)和介质谐振器振荡器(DRO)更为适合。 本文在对有关资料分析的基础上,提出了设计这一器件的基本原则;概述了器件的基本结构;介绍了器件的参数研究结果和电路应用情况。用该器件制作的X波段FET VCO,得到了800MHz以上的电调范围,在整个电调范围内,输出功率为30~50mW,功率起伏小于1.5dB。

Using the merged quadrode, instead of the pnp transistor, for current injection, a new-type device is developed to increase the speed of the PL circuit. The results show that the speed of the new-type I2L circuit has extremely been increased compared with that of the conventional PL circuit under the same injection bias. Moreover, the new-type PL circuit is of some advantages, such as simple processes and integrated suitability.

为了提高I~2L电路的速度,本文利用新型器件——四极并合晶体管代替pnp管进行电流注入,结果表明,在相同注入极电压下,I~2L电路的速度有较明显提高.同时,仍保持工艺简单、适于集成等优点.

In this paper, a new calculation method of multi-energy implantation i.e., "eqi-valent area method" has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MBSPET...

In this paper, a new calculation method of multi-energy implantation i.e., "eqi-valent area method" has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MBSPET or Si-IMPATT device whieh has a" horse-head" shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R. H. Benhard (1977).

本文提出了一种新的多能量离子注入的计算方法——“等效面积法”。应用这一方法可按器件的特殊要求,任意设计各种浓度分布。 本文应用这一方法,设计和计算了具有矩形杂质分布的Si-RAPD器件,具有低一高一低特殊分布的Si-RAPD和具有“马头”型结构的 GaAs M-ESPET器件,IMPATT器件,均得到了较为满意的结果。还对用这一方法设计新型器件的前景作了预测,最后把本文的计算结果与本纳德(R·H·Benhard)(1977)的实测值作了比较,结果是令人满意的。

 
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