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靶电压
相关语句
  target voltage
     Measurement of target voltage in laser plasmas
     激光等离子体中的靶电压测量
短句来源
     Target voltage of several KVs and the duration of or within a few nanoseconds have been measured when a 1.06μm laser beam (100 ps) is incident normally on an Al plane target at the power density ranging from 2 × 1014 to 8 × 1014W/cm2.
     100微微秒的1.06微米激光垂直入射到平面铝靶上,功率密度在2×10~(14)~8×10~(14)瓦/厘米~2范围内,测得几千伏的靶电压,持续时间等于或小于毫微秒量级。
短句来源
     In this paper, the influence of power mode, such as pulse frequency, reverse voltage, pulse reverse time, power density and other conditions, on the target voltage was investigated.
     本文研究了用中频脉冲直流溅射法和Zn:Al合金靶反应溅射制备ZnO:Al透明导电膜时,脉冲参数,如脉冲频率、反向脉冲幅度、反向脉冲时间、功率、氧氩比、溅射气压等工艺条件对溅射靶电压的影响。
     In addition the target voltage formula of radiation intensity maximum is derived for the normal incidence of the electron beam.
     同时本文还推导了当电子垂直入射靶面时的辐射强度最大值所对应之靶电压的计算公式:U_(0m)=3.77×10~5(μ/ρ)~(-1/2)。
短句来源
     Influence of various factors,including microwave power,target voltage and gas pressure,on the plasma properties in diamond-like carbon(DLC) film growth was also discussed.
     研究结果表明,微波功率、靶电压和真空度等参数对等离子体特性具有重要的影响。
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  “靶电压”译为未确定词的双语例句
     The results indicate that when the partial pressure of nitrogen is 45%,the voltage of the targets is 200V,the current of the targets is 25A,adjusting the Ar and N_2 proportion,the golden color ZrN films can be acquired with the uniformly components,and the films are compacted and have good adhesion.
     结果表明:当炉内氮气分压强为45%,控制靶电压200V,靶电流为25A,逐步调节Ar与N2比例,可获得成分均匀,膜层致密,结合力较好的金黄色氮化锆薄膜。
短句来源
     The sputtering rate can be controlled by changing target valtage,pressure and H/D.
     其溅射输出量可用靶电压、气压及空心阴极的高度和宽度的比值控制。 将多重空心阴极溅射靶应用于双辉离子金属渗镀试验。
短句来源
     The simulated hysteresis curve-target potential vs.oxyen flow rate-agrees fairly well with the experimental results.
     实验结果表明,钛靶电压随氧气流量在非平行的过渡区作非单调的变化。
短句来源
     In addition,the influence of the sputtering power on the potential and position of the critical transition region in the curve can be predicted with the simulation.
     建立在化学吸附模型基础上的模拟结果与实测的滞回曲线基本吻合,并可预期功率对靶电压及过渡区位置的影响。
短句来源
     We concluded that the two competing factors:implantation of reacitive ions and chemisorption of the reactive gas molecules,strongly affect the potential fluctuation in the metallic region of Ti target and account for the initial potential rise prior to the transition.
     模拟进一步考虑到离子注入的影响,计算结果表明,金属态靶电位的波动是由于反应气体离子的注入和反应气体分子化学吸附之间的相互竞争,从而解释了靶电压在过渡态之间出现升高的实验现象。
短句来源
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  相似匹配句对
     Measurement of target voltage in laser plasmas
     激光等离子体中的电压测量
短句来源
     power voltage supply;
     电网电压
短句来源
     A Discussion about Residual Voltage
     剩余电压
短句来源
     (7) Target sign;
     (7)征;
短句来源
     Transparent conductive film and target material
     透明导电膜及
短句来源
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  target voltage
Multiple classes of these toxins, which target voltage-gated Na+ channels via high-affinity binding to distinct but allosterically coupled sites, have been identified.
      
The influences of conductivity of the samples, HF frequency, rate of sputtertime and of the target voltage on these effects have been investigated.
      
When this advanced pickup tube is operated with an avalanche-mode at a target voltage of 2500 V, its sensitivity is about 60 times as great as the conventional HARP pickup tube with a target 2-μm thick.
      
The chromium structure, krypton content and properties were influenced by substrate temperature and potential with little effect of target voltage and deposition rate.
      
As the target voltage shifts to the reverse pulse, within 1 microsecond the emission intensity is back to its off-pulse level.
      
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Measurement and analysis have been made on the target voltage induced by the effect of spatial charge seperation at various power densities. Target voltage of several KVs and the duration of or within a few nanoseconds have been measured when a 1.06μm laser beam (100 ps) is incident normally on an Al plane target at the power density ranging from 2 × 1014 to 8 × 1014W/cm2.

观测并分析了不同功率密度下,由于激光等离子体的空间电荷分离效应而产生的靶电压。100微微秒的1.06微米激光垂直入射到平面铝靶上,功率密度在2×10~(14)~8×10~(14)瓦/厘米~2范围内,测得几千伏的靶电压,持续时间等于或小于毫微秒量级。

In this paper the structure and the operating principle of a lowpower ultra-soft X-ray source are described and the measurement results of the source are shown. The choice of the operating voltage is discussed. Eight targets made of different material are mounted on a carrying wheel which may be turned and are bombarded in turn by the electrons with high-velocity, and so the characteristic line spectra of eight kinds of elements are obtained. By using this X-ray source we have obtained the K,, characteristic...

In this paper the structure and the operating principle of a lowpower ultra-soft X-ray source are described and the measurement results of the source are shown. The choice of the operating voltage is discussed. Eight targets made of different material are mounted on a carrying wheel which may be turned and are bombarded in turn by the electrons with high-velocity, and so the characteristic line spectra of eight kinds of elements are obtained. By using this X-ray source we have obtained the K,, characteristic line spectra of aluminum(8. 34 A), carbon (44. 7A)and boron(67.6 A). The performances of this X-ray source are as follows: (1)The operating wavelength region-10-67 a. (2)The target power: 12 mW. (3)The target voltage: 500-4000V. (4)The radiation intensity of this source is variable in the range of 10-10~6 photons/second/steradian. The electron(primary)excitation mode is adopted in this source. It doesn't require any cooling because of the low power(12mW).

本文介绍了工作于1~67A波谱范围的多靶面低功率软X光源的工作原理、具体结构及实验结果。文章推导了电子束斜入射条件下极值靶电压的计算公式,并详尽地讨论了靶电压的选定。该X光源通过可转动的靶面支承轮,使4个(或8个)不同元素的靶面依次接受高速电子的轰击,从而获得4种(或8种)元素的特征X射线。靶极消耗功率为12mW,无需冷却即能正常工作。文中示出了Al—K_a(8.34A)、C—K_a(44.7A)及B—K_a(67.6A)等特征谱线测试结果。

The effect of the a-Si:H target voltage on the spectral photosensitivity is measured in a demountable apparatus with interchangeable targets. It is found that the effect of target voltage on the photoresponse increases when the light wavelength decreases. The target photocurrent is and saturation voltage Vs are analysed. It is shown that Vs ∝[(μpτp)-1, w2]. μpτp is calculated from measured V, value. It is found that μpτp value decreases when the light wavelength decreases. The optimal thicknesses of a-Si:H targets...

The effect of the a-Si:H target voltage on the spectral photosensitivity is measured in a demountable apparatus with interchangeable targets. It is found that the effect of target voltage on the photoresponse increases when the light wavelength decreases. The target photocurrent is and saturation voltage Vs are analysed. It is shown that Vs ∝[(μpτp)-1, w2]. μpτp is calculated from measured V, value. It is found that μpτp value decreases when the light wavelength decreases. The optimal thicknesses of a-Si:H targets for homogen-eous light and achromatic light are estimated.

用动态系统测量了a-Si∶H靶电压对光谱响应的影响,发现对短波响应影响较大。推导了靶光电流i_r和饱和电压V_c的计算公式,发现V_1∞[(μ,τ)~(-1),ω~2]。从测量的V_r值,计算了μ_Dτ_D值。发现它随入照光波长的缩短而减小。估算了对单色光和对白光的最佳靶厚。

 
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