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曝光模型
相关语句
  exposure model
     Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist
     厚层抗蚀剂曝光模型及其参数测量
短句来源
     Authors' simulated modeling curves resulted from adopting a phenomenological exposure model are found to be in good agreement with the experimental monitoring curves.
     采用了一个曝光模型 ,其模拟结果和实验中得到的自监测曲线能很好地吻合。
短句来源
     In consideration of many nonlinear factors in the exposure process and development features, we adopt a set of exposure parameters varying with resist thickness to improve Dill exposure model. Simulate the process of thick resist lithography and compare the simulation results of new exposure model with that of former Dill model.
     考虑厚胶曝光过程中非线性因素的影响及其显影特点,用一套随抗蚀剂厚度发生变化的曝光参数改进的Dill曝光模型,仿真厚层抗蚀剂光刻过程,并比较新曝光模型与原有Dill模型模拟的结果差异。
短句来源
     The simulation results show that the development profile of thick resist based on new exposure model is consistent with the experimental result, and the imaging mechanism of thick resist lithography is discussed.
     模拟显示,用新曝光模型获得的厚抗蚀剂显影轮廓与实验结果吻合较好; 并对厚胶光刻成像机理进行了讨论。
短句来源
  “曝光模型”译为未确定词的双语例句
     Based on the analysis, we find refractive index of resists changes during bleaching process, and the exposure parameters vary with resist thickness, so as the development parameters.
     针对厚层抗蚀剂在曝光过程中折射率发生了变化以及曝光参数随抗蚀剂厚度变化的特点,改进了原有的曝光模型
短句来源
     Based on the character of varying resist index during exposure process and varying exposure parameters with resist thickness, an enhanced DILL model suitable for thick resist, which considered the diffraction or scattering in the resist and extend the definition range of exposure parameters in DILL model, was proposed;
     针对厚层抗蚀剂在曝光过程中介质折射率发生变化及曝光参数随抗蚀剂厚度变化的特点,考虑厚胶内光的衍射或散射,扩展了DILL模型曝光参数定义范围,提出适合于厚胶曝光过程模拟的增强DILL曝光模型
短句来源
     Based on Fresnel diffraction theory, an UV-exposure model and a dimensional tolerance model were established.
     本文根据菲涅耳衍射理论建立了紫外曝光模型和尺寸公差模型。
短句来源
     Based on the UV-exposure model, development model was established by swelling theory.
     在紫外曝光模型的基础上,本文根据溶胀原理建立了显影模型,分析了SU-8胶在显影过程中的溶胀趋势。
短句来源
     To begin with, the earlier work for lithography simulation is introducted, which includes aerial image model, expose model for DNQs and chemically amplified photoresists(CARs), postbake model for CARs, and generic development model.
     文章从介绍前人做的光刻模拟工作开始,包括空气影像成形模型、DNQ胶和化学放大胶的曝光模型、化学放大胶后烘模型和一般显影模型。
短句来源
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  相似匹配句对
     This improved mixing dielectric model yields an excellent fit to measured data.
     模型
短句来源
     Obviously, EVA model turns out a scientific appraisals to motivate the managers.
     该模型为:
短句来源
     Optimization of Electron Scattering Model in Electron Beam Lithography
     电子束曝光中电子散射模型的优化
短句来源
     EXPOSURE
     曝光
短句来源
     Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist
     厚层抗蚀剂曝光模型及其参数测量
短句来源
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  exposure model
It is assumed that the scale parameter of each component satisfies the inverse power low, the progressive stress is directly proportional to time and the cumulative exposure model for the effect of changing stress holds.
      
For a population of all ages 0.042/Gy is obtained with the attained age model and 0.068/Gy with the age at exposure model.
      
The values do not include a dose and dose rate effectiveness factor (DDREF), and they are only half as large as the new UNSCEAR estimates of 0.082/Gy (attained age model and all ages ) and 0.13/Gy (age at exposure model and all ages).
      
For a population of all ages, 0.055/Gy is obtained with the attained-age model and 0.073/Gy with the age-at-exposure model.
      
A "lead exposure" model is proposed for the relationship between blood lead and air lead.
      
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This paper presents a simple method of obtaining the isopachics in laser holographic photoelasticity. The optical arrangement of general holographic polariscope is improved. The arrangement of the optical elements for the light beam which travels through the model is similar to that of a transmission polariscope. In the optical device, the object beam is a beam of light which comes from the beam splitter, then it passes through the beam spreader, the collimating lens, the model, the depolarizing diffuser, the...

This paper presents a simple method of obtaining the isopachics in laser holographic photoelasticity. The optical arrangement of general holographic polariscope is improved. The arrangement of the optical elements for the light beam which travels through the model is similar to that of a transmission polariscope. In the optical device, the object beam is a beam of light which comes from the beam splitter, then it passes through the beam spreader, the collimating lens, the model, the depolarizing diffuser, the quarter-wave plate, and the linear polarizer in order and finally arrives at the holographic plate. The reference beam comes from the beam splitter too. And ia the location of the beam splitter, it is the same circularly polarized light as the object beam is. According to the arrangement, when the hologram formed with the single-exposure holography is reconstructed, only the image of the model is seen, but the interference pattern cannot be seen whether the model is loaded or not. If the hologram is reconstructed and formed by the method of the double-exposure holographic photoelasticity, i.e, one exposure is made with the model unloaded and the other made after the model has been loaded, the interference pattern can be seen. If the thickness variation of the model occurs due to loading, the interference pattern is exactly the isopachics.The analysis using the Jones calculus and the experimental results for a circular ring in diametral compression are presented.

本文提出在激光全息光弹性方法实验中获得等和线的一种简易方法。文中把一般全息光弹性仪的光路作了改进。把物光光路排列成类似普通光弹性仪的光路。在这个光路中来自分光镜的圆偏振光依次通过扩束镜,准直镜,模型,退偏振漫射器、四分之一波片和线偏振器,最后到达全息干版作为物光。参考光也来自分光镜,在分光镜处它与物光是同旋的圆偏振光。按照这样排列光路,不管模型上是否加有载荷,当用激光全息的单曝光全息图再现时,只能看到模型的像而看不到干涉条纹。如果用两次曝光全息光弹性法所得到的全息图再现,一次曝光是模型上未加载荷,另一次曝光是模型上受有载荷,这时能看到干涉条纹。如果由于受载而模型的厚度发生变化,这时的干涉条纹就是等和线。 文中用琼斯运算作了分析,并且给出径向受压圆环的实验结果。

The paper mainly describes the related techniques that are to produce a sub-micron spot by laser and to explosure on a disk coated with photoresist. It has given the abbreviate structure of the servo-pattern pre-photoetching device,light path and the recording head. And it has proposed the explosure model for the servo-pattern pre-photoetching device.

本文讨论利用激光器产生亚微米光斑、在涂有光刻胶的磁盘上曝光的有关技术.给出了伺服图形预(光)刻机的系统结构、光路及刻录头设计,提出了伺服图形微斑记录曝光模型

: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns. Based on the Dill model and Mack model, this paper work out the lithography simulation software of thick resist, analyze the variation rules of line width and sidewall of developed profile with ideal exposure dose, get the development time of given resist thickness and hope to offer...

: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns. Based on the Dill model and Mack model, this paper work out the lithography simulation software of thick resist, analyze the variation rules of line width and sidewall of developed profile with ideal exposure dose, get the development time of given resist thickness and hope to offer a base to control development time rigorously in the experiment procedure.

DILL曝光模型和MACK显影模型,编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件,用其分析在理想曝光剂量条件下,抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律,分析得出了给定厚度的抗蚀剂的显影时间,为实验工艺上严格控制显影时间提供依据。

 
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