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激光器     
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  laser
     STUDY ON Ld-pumped 473nm wavelength All-solid-state blue laser
     LD泵浦的473nm波长全固体蓝激光器的研究
短句来源
     Research on TEA CO_2 Laser using PCB Preionization and PFN Discharge
     “印刷电路板预电离”TEA CO2激光器及脉冲形成网络放电研究
短句来源
     INVESTIGATION ON HIGH POWER HIGH REPETITION RATE TEA CO_2 LASER
     高功率高重复率TEA CO2激光器研究
短句来源
     Laser-Diode Pumped Monolithic Nd~(3+):YAG Laser Passively Q-Switched By the Saturable Absorber Cr~(4+):YAG
     激光二极管泵浦Cr~(4+):YAG被动调Q的Nd~(3+):YAG微片式激光器
短句来源
     Study on Frequency Resolved Optical Gating and LD-pumped Frequency-doubled Cr:LiSAF Laser
     频率分辨光学快门的理论研究和LD泵浦Cr:LiSAF蓝光激光器的研究
短句来源
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  lasers
     Theoretical lnvestigation on the Tuning Characteristics of High Power TE(A) CO_2 Lasers
     高功率TE(A) CO2激光器的调谐理论研究
短句来源
     Studies on Kinetics of Gas lasers and Optimal Designs of the Lasers with Large Power
     气体激光动力学研究及大功率激光器优化设计
短句来源
     Theoretical Design of Latest Gain Generator for Continuous Wave DF/HF Chemical Lasers
     连续波DF/HF化学激光器新型增益发生器的理论设计
短句来源
     Study of Wideband Fiber Amplifiers and Tunable Erbium-Doped Fiber Lasers
     宽带光纤放大器及可调谐掺铒光纤激光器的研究
短句来源
     Investigation of Devices and Physics for Antimonide Lasers and Photodiodes in Mid-infrared
     中红外波段锑化物激光器、探测器器件与物理研究
短句来源
更多       
  laser diode
     1.55μm InGaAsP/InP DFB-DC-PBH Laser Diode
     1.55μm GaInAsP/InP DFB-DC-PBH激光器
短句来源
     Laser Diode Pumped Nd:Gd_(0.42)Y_(0.58)VO_4/KTP Frequency-Doubling Laser
     激光二极管抽运Nd:Gd_(0.42)Y_(0.58)VO_4/KTP倍频激光器
短句来源
     Growth and Study of High Strain In_0.3Ga_0.7As/GaAs Quantum Well Laser Diode Device
     大应变In_(0.3)Ga_(0.7)As/GaAs量子阱激光器的生长和研究
短句来源
     Laser Diode End-pumped Yb∶YAG/LBO 525nm Green Laser
     LD端面泵浦Yb∶YAG/LBO 525nm绿光激光器
短句来源
     Laser Diode Side-pumped CW Nd∶YAG and Nd∶GdVO_4 Lasers
     LD列阵泵浦的Nd∶YAG和Nd∶GdVO_4连续激光器
短句来源
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  laser diodes
     Life Test of 1.3μm InGaASP/InP DC-PBH Laser Diodes
     1.3μm InGaAsP/InP DC-PBH激光器的寿命研究
短句来源
     DLD's Observation of GaAs-GaAlAs DH Laser Diodes
     GaAs-GaAlAs DH激光器暗线(DLD)的观察
短句来源
     Reliability of 1. 3μm InGaAsP/InP RWG Laser Diodes
     1.3μm InGaAsP/InP RWG型激光器的可靠性
短句来源
     Recent Advances in Long-Wavelength(1.3~1.55μm)DFB and DBR Laser Diodes
     1.3~1.55μm波长DFB和DBR激光器最新进展
短句来源
     MOCVD Epitaxy Growth of Low Threshold GaInP/AlGaInP 650nm Laser Diodes
     MOCVD生长低阈值电流GaInP/AlGaInP 650nm激光器
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  laser
Two compounds were designed, synthesized, and characterized by 1H-nuclear magnetic resonance (1H-NMR), ultraviolet (UV)-visible, and matrix-assisted laser desorption/ionization (MALDI) mass spectra.
      
Restriction Enzyme Pattern Analysis of Mycobacteria DNA by Capillary Electrophoresis with Laser-Induced Fluorescence Detection
      
A new method for rapidly detecting restriction enzyme patterns of Mycobacterium DNA using capillary electrophoresis with laser-induced fluorescence detection (CE-LIFD) was developed.
      
The polymers were characterized by IR spectra, thermal-weight analysis, scanning electron microscope and laser particle size analysis.
      
Photoinduced intramolecular electron transfer process from C60 moiety to carbazole moiety has been studied by nanosecond laser flash photolysis.
      
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  lasers
In this review article, the development of the double cladding optical fiber for high power fiber lasers is reviewed.
      
The main technology for high power fiber lasers, including laser diode beam shaping, fiber laser pumping techniques, and amplification systems, are discussed in detail.
      
Finally, the applications of fiber lasers in industry are also reviewed.
      
The sources of monochromatic radiation were heliumneon lasers.
      
An experimental study of gasdynamic windows for gas lasers
      
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  laser diode
The main technology for high power fiber lasers, including laser diode beam shaping, fiber laser pumping techniques, and amplification systems, are discussed in detail.
      
Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.
      
It is concluded that NYF:Er3+ crystals are promising as active media for tunable lasers with laser diode pumping.
      
Indium arsenide/gallium arsenide structures with vertically coupled quantum dots imbedded in the active zone of a laser diode are investigated by deep-level transient spectroscopy (DLTS), and the capacitance-voltage characteristics are analyzed.
      
A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
      
更多          
  laser diodes
A continuous-wave lasing at 1 μm was excited by the radiation of semiconductor laser diodes at room temperature in nanocrystalline ceramics Y2O3 doped with Nd3+ and Yb3+ ions.
      
The heterostructures obtained are used to fabricate laser diodes.
      
It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790-801 and 965-980 nm) corresponding to the emission range of laser diodes.
      
The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix.
      
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution
      
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