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自旋晶体管
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  spin transistor
     Investigation on NiFe/Ag/NiFe Nanometer Junction Spin Transistor
     NiFe/Ag/NiFe纳米结自旋晶体管研究
短句来源
     It's coefficient of magneto-resistance is ΔR/R≥9%,the coefficient of collector current amplify is MC>587%(in room temperature). The properties of spin transistor increase as the base thickness decreasing.
     该薄膜磁阻系数ΔR/R≥9%,全金属自旋晶体管试样集电极电流变化MC>587%(常温),且其性能随基极Ag层厚度减小而增强。
短句来源
     Double Barrier Magnetic Tunnel Junctions and Their Magneto-electric Properties for Spin Transistor Devices
     用于自旋晶体管的双势垒磁性隧道结及其磁电性质
     Giant Magnetoresistance Effect and Spin Transistor of Ferromagnetic Multilayers
     铁磁性多层膜的巨磁电阻效应和自旋晶体管
短句来源
     The mechanism of metal spin nanometer node transistor has been investigated in this paper. New kinds of NiFe/Ag/NiFe/ thin film material of metal spin transistor also have been manufactured and analyzed.
     利用直流磁控溅射工艺和掩膜技术研制出新型NiFe/Ag/NiFe全金属自旋晶体管试样。
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  spin transistors
     Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors
     双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用
短句来源
     s:Several new devices which are the candidates of post CMOS devices possibly were introduced,including resonant tunneling transistors,single,electron transistors,CNTFETs,molecular devices and spin transistors.
     介绍了几种后CMOS器件可能的候选器件:谐振隧道器件、单电子晶体管、碳纳米管晶体管、分子器件和自旋晶体管
短句来源
     In this article a brief survey is presented of these applications in read heads, random access memories, magnetic field sensors, spin transistors and spin valve transistors and given of the principle, performance features and further development of them.
     本文介绍了磁电子学在计算机读出磁头、随机存取存储器、磁传感器、自旋晶体管和自旋阀晶体管中的应用 ,描述了它们的工作原理、性能特点及研究现状和发展趋势
短句来源
     We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
     由此,设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管.
短句来源
     Three-terminal spintronic devices,i. e. ,spin transistors,are also reviewed with the focus on the basic physical principles for these pure research devices at present.
     自旋晶体管作为未来磁电子学或自旋电子学时代的基本元素,目前大都还处在概念型阶段,本文也将对几种自旋晶体管的大致原理作简要介绍。
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  “自旋晶体管”译为未确定词的双语例句
     It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base,the spin relaxation time and the width of the base. 
     自旋晶体管中的电流放大系数主要取决于注入基区的自旋极化电子的极化程度,基区中自旋的驰豫时间及基区的宽度.
短句来源
     Several new conceptions of transistors are briefly introduced,including flexible transistor,single-atom transistor,single-electron transistor,single-spin transistor,quantum mechanical transistor,resonant tunneling transistor,thin-film transistor,transparent transistor and nano-transistor.
     简要介绍了几种晶体管,包括柔性晶体管、单原子晶体管、单电子晶体管、单自旋晶体管、量子力学晶体管、谐振隧穿晶体管、薄膜晶体管、透明晶体管和纳米晶体管的新概念。
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  spin transistor
A new design of spin transistor based on half-metallic ferromagnets (referred to as a spin half-metallic transistor) is suggested, and its current-voltage characteristics are studied theoretically.
      
A new class of spin valve ultrafast devices with small dissipated power is described: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, and a square-law detector.
      
This extra rotation allows the design of a spin transistor with enhanced spin control.
      
A spintronic device that has stimulated much research interest is the Datta-Das spin transistor.
      
  spin transistors
The perspectives for the realization of polariton lasers, polariton spin transistors and polarization modulators are presented.
      
This effect forms the base for an improved version of the Datta-Das and a recently proposed family of spin transistors.
      
Comparison of Performance of n- and p-Type Spin Transistors With Conventional Transistors
      
Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can be used to further enhance the advantage of hole-based spin transistors.
      
Compared to present transistors we conclude that electron-based spin transistors will have problems to become competitive but hole-based ones are much more promising.
      


The present status and development of magneto optical and magnetic storages have been discussed in this paper. Along the lines of the traditional disc drives their maximum recording density can approach to about 10Gbits/in 2. Such a up limitation arises from the recording media and mode especial of the magnetic and optical head to be used. For further increasing the recording density, scanning near field optical microscopy, atomic force, magnetic force and scanning tunnel microscopy could be used to write/erase...

The present status and development of magneto optical and magnetic storages have been discussed in this paper. Along the lines of the traditional disc drives their maximum recording density can approach to about 10Gbits/in 2. Such a up limitation arises from the recording media and mode especial of the magnetic and optical head to be used. For further increasing the recording density, scanning near field optical microscopy, atomic force, magnetic force and scanning tunnel microscopy could be used to write/erase data. However, it seems to take quite a long time for their practical application. During the increase of the recording density of the magneto optical and magnetic storages, optical storage such as CD ROM (Write Only), CDR(Read only) and PD(Phase Change Disc) have been developed successfully. The practical application of the magnetic and optical storages makes the data storage brilliant and the data storages become today a very important field in the information technology.

本文综述了自旋极化输运过程中巡游电子的自旋极化、自旋相关的散射及自旋弛豫等三方面的内容;全面总结了铁磁金属的磁电阻效应(AMR)、磁性金属多层膜和颗粒膜的巨磁电阻效应(GMR)、氧化物铁磁体的特大磁电阻效应(CMR)以及磁隧道结的巨大隧道电阻效应(TMR)研究中具有代表性的实验结果及理论模型;简单介绍了新生的磁电子器件—磁电阻型随机存取存储器(MRAM)和全金属自旋晶体管的工作原理和工作过程。

The magnetoelectronics based on magnetic multilayers was introduced here. Its influences on microelectronics based on semiconductors have been reviewed. Potential application have been ex ̄plained in detail, such as magnetoelectronics devices in magnetoresistive random access memory (MRAM), GMR reading head, spin transistor and logic element. Conceivably, computersinpr in principle could be constructed by all metal devices instead of semiconductor IC.

本文介绍了磁学研究前沿———基于磁性金属多层膜的磁电子学,将对基于半导体的微电子学带来的影响。较详细地说明了磁电子器件在随机存取存储器、读出磁头、自旋晶体管及逻辑元件方面的应用。从而说明不用半导体集成电路的全金属计算机的出现。从原理上是完全可能的。

:In this paper, the physical mechanics of giant magnetoresistance effect and spin valve giant magnetoresistance effect is presented. The principle of the new microelectronic devices, spin transistor and spin valve transistor is reviewed. Spin transistor will have remarkable applied potential because of its excellent properties.

简述了铁磁性多层膜的巨磁电阻效应和自旋阀巨磁电阻效应产生的物理机制。介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。由于自旋晶体管优良的性能,在计算机和通讯领域有广泛的应用前景。

 
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