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   生长条纹 在 物理学 分类中 的翻译结果: 查询用时:1.825秒
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生长条纹    
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  growth striation
    The as-grown defects in La_2Ti_2O_7 crystals, such as precipitates, growth striation, "band-
    应用在国产DX-3A扫描电镜上自己研制的阴极射线致发光装置,研究了La_2Ti_2O_7,晶体生长缺陷。 观察到包裹物、生长条纹、带状缺陷等。
短句来源
    The constitutional supercooling and internal growth striation in the SNLN crystals have been overcome and the optical homogeneity of the crystals have been improved by employing optimum growth condition and technique.
    采用最佳的生长和工艺条件克服了铌酸锶钠锂晶体的组分过冷和内部生长条纹,提高了晶体的光学均匀性。
短句来源
    The defects such as growth striation constitutional supercooling,stress and dislocation are also dis-cussed in the paper.
    此外还讨论了生长条纹、组分过冷、应力和位错等缺陷问题。
短句来源
    The macro defects in crystals obtained,including growth striation,inclusions,dislocations,and sub-grain boundary were observed by chemical corrosion,Leitz optical microscopy,scanning electron microscopy and energy dispersive spectroscopy.
    运用化学腐蚀,光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷,以及晶体的位错腐蚀形貌、位错密度及其分布情况,同时观察了晶体中亚晶界的形态。
短句来源
    The dislocation density of radial distribution and growth striation of Yb∶FAP crystal reveal that the growth of crystal is on a convex solid-liquid interface.
    由晶体中位错的径向变化以及生长条纹可知:晶体在生长过程中为微凸界面生长。
短句来源
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  growth striations
    THE CORRESPONDANCE BETWEEN GROWTH STRIATIONS AND STRUCTURES OF FERROELECTRIC DOMAINS IN CZOCHRALSKI-GROWN LiNbO_3 SINGLE CRYSTALS
    直拉法生长的LiNbO_3单晶体中的生长条纹和铁电畴组态间的对应关系
短句来源
    It is revealed that there exist holes of silk-form,hexago-nal koles, inclusions, growth striations, twinning boundaries, crystal basal face corrugationsand other defects in fluorophlogopite crystals.
    发现氟金云母晶体中有丝状空洞、六方空洞、杂质包裹物、生长条纹、孪晶界、晶体基面皱折等缺陷。
短句来源
    Several grown-in defects, such as growth striations, singular facets and dislocation bands perpendicular to the grown striation, were revealed. The configuration and formation of these defects were discussed in brief.
    揭示了YAG单晶的生长条纹、奇异小面以及垂直于生长条纹的位错线束等生长缺陷,并对这些缺陷作了简要的分析。
短句来源
    The one-to-one correspondance between speed of crystal revolution temperature fluctuations, surface growth striations and interior growth striations have been demonstrated.
    建立了晶体转速、温度起伏、表面生长条纹和内部生长条纹间的一一对应关系,从而在晶体中有意识地引入了其周期可以任意调节的旋转生长条纹
短句来源
    By means of a simple physical model of Czochralski crystal growth,a formulafor the temperature fluctuations at the solid-liquid interface due to non-coincidence ofthe rotational axis of the growing crystal with the symmetrical axis of the temperaturefield has been given,and then verified quantitatively in Czochralski growth of LiNbO_3single crystals. The conclusion that such temperature fluctuations give the opportunityof forming rotational growth striations has been reached.
    根据一个简化的直拉法晶体生长的物理模型,给出了当晶体旋转时由于晶体旋转轴与温场对称轴不一致所引起固液界面温度起伏的表达式,并且在 LiNbO_3单晶生长中进行了实验验证,得出了这种固液界面的温度起伏是形成旋转生长条纹原因的结论。
短句来源
更多       
  growth stripe
    We describe here six kinds of Macro-defects found in ZnCd(SCN)4 (abbreviated as ZCTC) large crystals grown by the solvent evaporation method. These defects include: (1) solution inclusions, (2) negative crystal, (3) crack, (4) growth stripe, (5) fan shaped boundary and (6) straight pipe.
    研究了采用蒸发法生长的新型高效紫外非线性光学晶体ZnCd(SCN) 4 (简称ZCTC)中的溶液包裹物、负晶、开裂、生长条纹、扇形界及直线管道等宏观缺陷的形成。
短句来源
    The Nd∶GGG crystal defects were studied by the synchrotron radiation white-beam topography. The growth stripe and dislocation as main defect in the crystal were observed. The form reason of the growth stripe is that the temperature waving lead to the growth velocity fluctuating.
    应用同步辐射X射线白光形貌术,对Nd∶GGG晶体中的缺陷进行了研究,观察到晶体中的主要缺陷是生长条纹和位错,对生长条纹产生的机理和位错的类型进行了分析讨论,生长条纹是由于温度波动引起生长率的起伏产生的,确定晶体中的位错有刃型位错、螺旋位错和混合位错。
短句来源
  growth stripe
    We describe here six kinds of Macro-defects found in ZnCd(SCN)4 (abbreviated as ZCTC) large crystals grown by the solvent evaporation method. These defects include: (1) solution inclusions, (2) negative crystal, (3) crack, (4) growth stripe, (5) fan shaped boundary and (6) straight pipe.
    研究了采用蒸发法生长的新型高效紫外非线性光学晶体ZnCd(SCN) 4 (简称ZCTC)中的溶液包裹物、负晶、开裂、生长条纹、扇形界及直线管道等宏观缺陷的形成。
短句来源
    The Nd∶GGG crystal defects were studied by the synchrotron radiation white-beam topography. The growth stripe and dislocation as main defect in the crystal were observed. The form reason of the growth stripe is that the temperature waving lead to the growth velocity fluctuating.
    应用同步辐射X射线白光形貌术,对Nd∶GGG晶体中的缺陷进行了研究,观察到晶体中的主要缺陷是生长条纹和位错,对生长条纹产生的机理和位错的类型进行了分析讨论,生长条纹是由于温度波动引起生长率的起伏产生的,确定晶体中的位错有刃型位错、螺旋位错和混合位错。
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  growth striation
Microbial carbonates commonly trap fine-sized bioclasts, contain tubular filaments, and show laminated growth striation.
      
Growth striation is induced in silicon crystals grown even under high oxygen-partial pressure.
      
  growth striations
It is demonstrated that fluctuations of the crystal growth rate cause the formation of transverse growth striations.
      
Some specific features in x-ray topography images of growth striations, caused by a high silicon concentration and a dopant state deviation from an ideal substitutional solid solution, were revealed.
      
Both field and aquarium experiments demonstrated the formation of diurnal growth ridges and subdiurnal periodic growth striations on the shell surface.
      
It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process.
      
Investigation of the growth striations in silicon by X-ray topography
      
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