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深层反应
相关语句
  deep reaction
     By soaking,H3BO3,Na2CO3,CaCl2 and FeCl3 were loaded onto coke surface. The microstructure and morphology of the coke after soaking H3BO3 was represented using SEM,EDS and XPS. The reactivity and resistance to erosion of alkali and Fe,coke deep reaction and mechanism of coke passivation were studied.
     用浸泡的方法将H3BO3、Na2CO3、CaCl2、FeCl3等负载于焦炭中,并用SEM、EDS、XPS对浸泡硼酸后的焦炭结构和形貌进行了表征,对浸泡硼酸后的焦炭与二氧化碳的反应性、抵抗碱和铁的侵蚀能力、深层反应以及硼的钝化机理等进行了研究。
短句来源
     Deep Reaction of Coke
     焦炭的深层反应
短句来源
     Elementary Probing of Pore Structure Influence on Coke Deep Reaction
     气孔结构对焦炭深层反应影响的初探
短句来源
  相似匹配句对
     Deep Reaction of Coke
     焦炭的深层反应
短句来源
     From the result of above tests, optimal reaction solution was obtained.
     反应条件。
短句来源
     Its high activity and selectivity for Heck reactions were measured;
     BuHeek反应
短句来源
     Elementary Probing of Pore Structure Influence on Coke Deep Reaction
     气孔结构对焦炭深层反应影响的初探
短句来源
     the Atlantic layer waters are in the deep water;
     深层为大西洋源水 ;
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The effect of reaction temperature and alkalis on the deep reaction of cokeis studied. The results show that the surface reaction of coke is strengthened with temperature rise and increased by adding alkalis.

研究了反应温度及碱金属对焦炭深层反应的影响。结果表明,焦炭表面反应程度随反应温度提高而增强,还因加碱而增加。

The influence of pore structure on coke deep reaction is studied and the theory of factal geometry is applied in the study of the pore structure of coke.

研究了气孔结构对焦炭深层反应的影响,并将分形几何理论引入到气孔结构的研究中。

In this paper,a novel fabrication technique to obtain silicon crystalline flat planes is described. The selected Si crystalline planes that are not always the planes having the lowest etching rate are pre-obtained by deep-RIE. Si anisotropic wet etching generates the flat crystalline planes with EPW after the deep-RIE. The proposed technique is demonstrated by fabricating a solid polymer dye micro-cavity laser that is molded by the etched Si cavity. The lasing spectra confirm that the planes are optically smooth...

In this paper,a novel fabrication technique to obtain silicon crystalline flat planes is described. The selected Si crystalline planes that are not always the planes having the lowest etching rate are pre-obtained by deep-RIE. Si anisotropic wet etching generates the flat crystalline planes with EPW after the deep-RIE. The proposed technique is demonstrated by fabricating a solid polymer dye micro-cavity laser that is molded by the etched Si cavity. The lasing spectra confirm that the planes are optically smooth by measuring the sidewalls of the Si mold.

研究了一种利用硅微结构直接作为模具制作微小固体染料激光器谐振腔。它采用了硅的深层反应离子刻蚀技术 (deep RIE)并结合硅的各向异性腐蚀技术 (EPW ) ,由于EPW对〈110〉面有仅次于〈111〉面的腐蚀速率 ,可制造出具有光学镜面的侧壁面的硅模具。利用此模具可制成出四角形环型PMMA固态染料微小谐振腔。利用激光染料若丹明 6G掺杂的聚甲基丙烯酸甲酯 (PMMA) ,在调QNd∶YAG自倍频激光 5 32nm泵浦下 ,得到 5 90nm波长附近的激光输出。

 
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