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淀积温度
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  deposition temperature
     Using proton nuclear magnetic menance (1H NMR) to detemine plasma - chem italvapour - deposited amorphous hydrogenated silicon nitride (PECVD a - SiNx:H) films, the effects of deposition temperature, rf power and annealing temperature on the hydrogen density and microstructure of α - SiNx: H are analyed.
     用质子核磁共振(1HNMR)方法对等离子体化学气相淀积非晶氢化氮化硅薄膜(PECVD-α-SiNx:H)进行测量,分析膜中H的含量和分布与淀积温度、射频功率等工艺条件的关系,以及退火的影响。
短句来源
     Through investigation and a series of comparison experiments, it is concluded that the main factors influencing the filling performance are hot\|aluminum deposition temperature, hot\|aluminum deposition power, thickness of Ti wetting layer and the thickness ratio of cold/hot aluminum.
     通过研究和一系列的比较实验 ,发现影响铝填充性能的主要因素为 :热铝淀积温度、热铝淀积功率、Ti浸润层厚度及冷热铝厚度比 .
短句来源
     The influence of SiNx deposited by PECVD in different condition, especially changing deposition temperature, on the GaAs surface after sulfur passivation is measured by SIMS analysis combined with the test for direct current breakdown characteristics.
     用SIMS分析结合器件直流特性测试,比较了在不同条件下淀积的氮化硅对GaAs硫钝化表面的作用,特别是淀积温度分别为80℃、80℃/230℃、230℃时对硫钝化效果的影响。
短句来源
     The crystal structure of the LPCVD polysilicon films (used as piezoresistive elements) related to the deposition temperature, the film thickness and the heat-treatment temperature is investigated.
     本文研究了用于制作压阻元件的LPCVD多晶硅薄晶体结构与淀积温度,膜厚及热处理温度的关系。
短句来源
     β-SiC thin films were heteroepitaxially grown on (100)Si substrates at a temperaturerange from 1000 to 1400℃ by atmospheric pressure chemical vapor deposition (APCVD) process. Experimental results show that the epitaxial layers change from polycrystalline silicon into singlecrystal β-SiC state with the deposition temperature's increasing, but the growth rates of singlecrystal films decrease inversely.
     采用常压化学气相淀积(APCVD)工艺在1000~1400℃温度范围内的(100)Si衬底上进行了β-SiC薄膜的异质外延生长.实验结果表明,随着淀积温度的升高,外延层由多晶硅向β-SiC单晶转变,结晶情况变好; 但同时单晶生长速率却反而有所下降.
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  depositing temperature
     The doped μC-Si:H films were characterized by the conductivity about 10 (ohm-cm)~(-1) and an optical gap 1.6eV,depositing temperature being about 280℃.
     掺杂μC—Si:H 薄膜是由辉光放电制备,它的电导率约 1000S/m 光学带隙是1.6eV,淀积温度是280℃。
短句来源
     Rising the depositing temperature and keeping the Sr precursor dry is very important for SCYO preparation.
     适当提高淀积温度并注意保持Sr源的干燥,对于制备SCYO薄膜至关重要。
短句来源
  “淀积温度”译为未确定词的双语例句
     lithography. The tomperture is 200~280℃ & The reactive gases are SiH_4 and N_2O for the PECVD SiO_2 process.
     淀积温度为200~280℃,反应气体是SiH_4—N_2O体系。
短句来源
     When deposition lemperature is at 300—500℃ the sheet resist-ance of SnO_2 film is down to 35—45Ω/□,and its spectral transmittance is grea-ter than 90%.
     采用化学蒸淀法,当淀积温度为300—500℃时,SnO_2薄膜的膜电阻可低达35—45Ω/□,可见光光谱透过率可大于85%.
短句来源
     Influence of Substrate Temperature and Oxygen Content on Structure and Properties of ITO Films
     淀积温度和氧含量对ITO膜结构及性能的影响
短句来源
     In this paper,the influence of the crystal structure of LPCVD polysilicon thinfilm upon the film piezoresistive effect has been researched. Changing the depositiontemperature and the film thickness,the different crystal structures of the film have beenobtained. The doping concentration is 10~25 ((?)
     本文研究了LPCVD多晶硅薄膜晶体结构对薄膜压阻效应的影响,通过改变淀积温度和膜厚得到晶体结构不同的薄膜,经硼离子注入掺杂,杂质浓度均为10~(25)/m~3用X 射线衍射法分析了薄膜晶体结构,悬梁实验测出薄膜应变系数GF 随淀积温度和膜厚的变化。
短句来源
     The experimental curves of thin film GF versus thedeposition temperature and film thickness have been explained theoretically.
     理论结果较好地解释了薄膜GF 与淀积温度和膜厚的实验曲线.
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  deposition temperature
The concentration of Cd ions, deposition temperature, deposition time and post-treatment temperature have an impact on the formation of CdS nano-films.
      
The evaporation time controls the deposit thickness, while the deposition temperature determines the phase structure.
      
The conditions of formation of statistically homogeneous nanocrystalline layers depend on the deposition temperature and the partial pressures of Ar and reactive gases.
      
The dependence of the photoluminescence spectra of structures with self-assembled GeSi/Si(001) islands on Ge deposition temperature was studied.
      
The position of the island photoluminescence peak maximum was found to shift nonmonotonically with decreasing Ge deposition temperature.
      
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This paper deals with the investigation of the doping growth of GaN by using Ga-HCl-NH3-H2-Ar system.The experimental results indicate that the incorporation of Zinc into epitaxial layers and the morphology of the layers are significantly effected by each of deposition parameters,especially by the deposition temperature.It was found that there is a narrow range of temperature (ca.970-1000℃) in which Zinc incorporates abruptly into the epitaxial layers and the layers grown have better quality.In addition an initial...

This paper deals with the investigation of the doping growth of GaN by using Ga-HCl-NH3-H2-Ar system.The experimental results indicate that the incorporation of Zinc into epitaxial layers and the morphology of the layers are significantly effected by each of deposition parameters,especially by the deposition temperature.It was found that there is a narrow range of temperature (ca.970-1000℃) in which Zinc incorporates abruptly into the epitaxial layers and the layers grown have better quality.In addition an initial test of doping growth with both Zinc and phosphorus as dopants was carried out.The result suggests the value of further rese-(re-search) search on it.The measurement of the impurity distributions in the depth of the layers grown showed the difference in the incorporation behaviours of Zinc and phosphorus.On the basis of these experimental facts the mechanisms of Zinc-doping and crystal growth processes are presented and a desirable procedure for doping epitaxial growth is suggested.This paper deals with the investigation of the doping growth of GaN by using Ga-HCl-NH3-H2-Ar system.The experimental results indicate that the incorporation of Zinc into epitaxial layers and the morphology of the layers are significantly effected by each of deposition parameters,especially by the deposition temperature.It was found that there is a narrow range of temperature (ca.970-1000℃) in which Zinc incorporates abruptly into the epitaxial layers and the layers grown have better quality.In addition an initial test of doping growth with both Zinc and phosphorus as dopants was carried out.The result suggests the value of further rese-(re-search) search on it.The measurement of the impurity distributions in the depth of the layers grown showed the difference in the incorporation behaviours of Zinc and phosphorus.On the basis of these experimental facts the mechanisms of Zinc-doping and crystal growth processes are presented and a desirable procedure for doping epitaxial growth is suggested.

本文报导了用Ga-HCl-NH_3-H_2-Ar系统进行GaN掺杂生长的研究。实验结果指出:锌向外延层的并入和生长层的表面形貌显著地受各淀积参数特别是淀积温度的影响。发现存在一个狭窄的温度范围(我们实验条件下,970-1000℃),在该温度范围内,锌骤然并入生长层,且生长层具有良好的表面。此外,还进行了锌和磷双掺杂的初步探索试验,结果表明有必要对其进一步开展研究。生长层中杂质的深度分布的分析发现磷和锌的掺入行为不同。根据实验事实,讨论了锌掺杂和晶体生长过程的机理并提出了一个掺杂生长的合理程序。

This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows. With the help of the high-precision semiconduc- tor flow meter developed by us, the reaction gas and carrier gas flow have been measured. According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.

本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度;用我们自己研制的高精度半导体流量计来测量反应气体和运载气体的流量。文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。

A thermodynamic analysis of the deposition of Ga_xAl_(1-r)N from the Al-Ga-HCl-NH_3-H_2 system is described. A computation procedure is developed to predict the equilibrium partial pressure of the major gaseous species and the deposition rate and composition of the solid phase under various input gas stream composition and temperature conditions. The relevance of these results to the preparation of Ga_xAl_(1-x)N solid solutions is discussed.

本文叙述了以Ga—Al—HCl—NH_3—H_2体系淀积Ga_xAl_(l-x)N材料的热力学分析。所提出的计算程序可以予言在各种输入气流组成和淀积温度条件下体系中主要气态物种的平衡分压和固相组成及其淀积速率。并讨论了这些理论计算结果对于Ga_xAl_(l-x)N固溶体材料研制的指导意义。

 
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