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金刚石生长
相关语句
  diamond growth
     C-H System Low-Pressure Diamond Growth Condition influenced by Activation Temperature
     激活温度对C-H体系低压金刚石生长条件的影响
短句来源
     Effects of Activation Temperature on Diamond Growth in C-H,C-O and C-H-O Systems under Low Temperature
     激活温度对C-H、C-O和C-H-O体系低压金刚石生长条件的影响
短句来源
     Through comparing the model with the experimental data,it is suggested that the kinetic model can be used for the actual growth of diamond films,and for the identification of the diamond growth mechanisms.
     本模型的理论结果与实验数据的对比表明,它可以用于实际金刚石薄膜生长过程的研究,为生长工艺参数的优化提供理论基础,并且有助于对金刚石生长机理的认识
短句来源
     Research of Computer-controlled CVD Diamond Growth System
     计算机控制CVD金刚石生长系统的研究
短句来源
     So it is believed that there must exist 3d-electrons transition in iron atoms in the γ-(Fe, Ni) in the film, from which the γ-(Fe, Ni) in the film could be thought as a catalyzing phase under diamond growth at HPHT.
     这表明Fe基金属包膜内γ-(Fe,Ni)中Fe原子的3d层电子状态发生了变化,包膜的γ-(Fe,Ni)在高温高压金刚石生长过程中是一催化相.
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  “金刚石生长”译为未确定词的双语例句
     Since the rasistance R(G)>R(Me),temperature T(G)>T(Me) and the heat exchange with outside,et al.
     因电阻T_(G)>R_(Me)、温度T_(G)>T_(Me)以及与外界热交换等原因,使合成腔内产生压力、温度梯度,成为金刚石生长之驱动力。
短句来源
     In this work,the diamond crystals were synthesized in a(FeMn)_xAl_((1-x))-C system at 5.6~5.8 GPa and 1400 ~ 1600 ℃.
     利用F eM n-C体系以及添加剂A l,在国产六面顶压机上分别进行了合成金刚石单晶的实验,研究了在高温高压条件下(5.6~5.8 GPa,1400℃~1600℃)(F eM n)xA l(1-x)-C(0≤x≤1)体系金刚石生长特性。
短句来源
     CH 3 and C 2H 2 are the dominant growth precursors during chemical vapor deposition diamond process.
     化学气相淀积金刚石薄膜过程中 ,CH3 和C2 H2 是金刚石生长的主要前驱基团。
短句来源
     Considering the template dynamics control factors' role of the surface, descriptions of growth mechanism of CVD diamond film such as thermodynamics factors, dynamics control, and surface reaction could be integrated into a unitary theory:a.
     这一描述包含了动力学控制模型、表面反应模型、氢原子刻蚀模型中合理的部分,在考虑了表面模板作用这一动力学控制因素以后,使热力学因素的影响、动力学控制、表面反应、氢原子刻蚀等对金刚石生长过程的描述合并为一完整的理论:
短句来源
     A STUDY ON THE SURFACE COVERAGE OF THE CHEMICAL VAPOR DEPOSITED DIAMOND BY HYDROGEN ATOMS
     化学汽相沉积金刚石生长表面氢原子覆盖率的研究
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  相似匹配句对
     The gas-Phase Epitaxial Growth of Diamond Film
     金刚石薄膜气相外延生长
短句来源
     Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth
     C-H-N体系生长金刚石薄膜
短句来源
     Brief Introduction of Diamond
     金刚石简介
短句来源
     growth of diameter ,height and volume;
     材积生长
短句来源
     New diamond
     新金刚石
短句来源
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  diamond growth
We determined the fields of carbon solutions in pyrrhotite melt showing labile and metastable oversaturation with respect to diamond, which correspond to the spontaneous nucleation of the diamond phase and diamond growth on seeds, respectively.
      
The results obtained make it possible to estimate the temperature and duration of natural diamond growth.
      
A projective ternary phase diagram of stationary non-equilibrium states for low-pressure diamond growth
      
Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized.
      
Metastable diamond growth in the laboratory is well established and its occurrence in natural systems is proposed.
      
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Investigation of the reaction system adopted in growing diamond on the seed was car-ried out by means of optics and electron probe microscopy analysis (EPMA).It has beenfound that boundary layer of thickness about 60 μm exists between the growing faces andthe solution phase.At the same time, the valence states of carbon in the metal solutionhave been determined.Making a comparison of our experimental results with the generaliz-ed BCF theoretical model,we may conclude that the growth of synthetic diamond at thesegrowth...

Investigation of the reaction system adopted in growing diamond on the seed was car-ried out by means of optics and electron probe microscopy analysis (EPMA).It has beenfound that boundary layer of thickness about 60 μm exists between the growing faces andthe solution phase.At the same time, the valence states of carbon in the metal solutionhave been determined.Making a comparison of our experimental results with the generaliz-ed BCF theoretical model,we may conclude that the growth of synthetic diamond at thesegrowth conditions should be a case of solution growth limited by the volume diffusion.

用光学和电子探针方法研究了晶种法生长金刚石的反应系统,发现在晶体与溶液之间存在着一个厚度约60μm的边界层,并测定了碳在溶液中的存在状态。将该实验结果与广义的BCF晶体生长理论进行了对照,认为在这种条件下,金刚石的生长是一种受体扩散控制的溶液生长过程。

Several kinds of graphite used for synthesizing diamonds werestudied by X-ray diffraction analysis. Experimental results show that thegraphite has two types of turbostratic structures, i.e. hexagonal and rhombo-hedral. According to the measurements of ESR, the nitrogen concentration inAl-and B-doped synthetic diamonds are of the order of 10~(17) atoms/cm~3, justlike that in natural diamonds of type Ib .The growth mechanism of syntheticdiamonds is also discussed in this paper.

用X射线衍射分析研究了合成金刚石的石墨材料。结果表明,石墨材料是涡流层状结构的碳,它包含六方和菱形石墨结构。在用掺铝、硼元素的石墨合成的金刚石中,ESR的氮原子浓度和天然I b型金刚石同为10~(17)数量级。讨论了人造金刚石的生长机制。

This paper discusses the temperature control for the growth of synthetic diamond, associated with the cell assembly, temperature gradient in the cell and boundary condition.

本文讨论了与腔体组装方法、温度梯度和边界条件等有关的温度控制问题及其对金刚石生长的影响。

 
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