助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   晶体管阵列 的翻译结果: 查询用时:0.024秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

晶体管阵列
相关语句
  transistor arrays
     Flexible Transistor Arrays
     柔性晶体管阵列
短句来源
     Study on the Technique about Thermal Resistance and Burn-in of Transistor Arrays
     对晶体管阵列热阻和电老炼相关技术的探讨
短句来源
     Consisting of 7 Darlington transistor arrays,associated resistor networks and clamping diode networks,the device is capable of driving 7 loads simultaneously.
     该电路由七组达林顿晶体管阵列和相应的电阻网络以及箝位二极管网络构成,具有同时驱动七组负载的能力,是一种单片双极型大功率高速集成电路,适用于各类要求高速大功率驱动的系统。
短句来源
     Markets are now emerging for flexible transistor arrays and the state of the art is exciting, but there are challenges to be overcome before flexible arrays can enter the mainstream.
     现在市场上出现了柔性晶体管阵列并且前景诱人,但是在柔性阵列技术进入主流市场之前还要克服不少困难。
短句来源
     In order to solve the problems in the burn-in test unknowing the max dissipation power, the relative techniques and methods about thermal resistance and burn-in of transistor arrays are offered, how to calculate the maximal dissipation power with thermal resistance of transistor arrays and how to validate the result are pointed out, the problems that should be noticed in burn-in test are motioned.
     为解决在未知最大额定功耗的情况下进行电老炼的问题,提供了晶体管阵列热阻和电老炼的相关技术与方法,指出了如何利用热阻去推算最大功耗以及如何验证推算的正确性,最后给出了晶体管阵列老炼时应注意的问题。
短句来源
  “晶体管阵列”译为未确定词的双语例句
     Darlington Stage Array ULN2800 Serles and It's Application
     达林顿晶体管阵列ULN2800系列及其应用
短句来源
     Such generator outputed current impulses of 7 ns wide and 6 A high from the two-stage avalanche transistor matrix using the avalanche effect.
     利用晶体 管的雪崩效应,通过两级雪崩晶体管阵列,得到了7 ns、6 A的大电流窄脉冲。
短句来源
     In this paper,to begin with,the performances of amorphous-silicon material and ploysilicon material are compared,and then the process for fabricating poly-SiTFTs and progress in Process are described
     本文首先就用来制造有源矩阵液晶显示器的非晶硅和多晶硅材料作了性能比较,然后描述了多晶硅薄膜晶体管阵列的制造方法,以及在制造方法上取得的进展。
短句来源
     This paper describes Darlington stage arrayULN2800 series and through practical examplesintroduces a simple way of using them to interfacehigh-consume elements supplied with lager-circuit andhigh-voltage with low-logic-voltage digital circuits.
     本文通过实用的例子介绍了ULN2800系列达林顿晶体管阵列及其在实现有负载要求的较大电流、较高电压器件与低逻辑电平数字电路接口中的应用的简单方法。
短句来源
     It emphasizedthe structure, specifications and its influence to the machining resolution of the planes and to the section exposition size of the LCD light valve dial, e.g. controlled light transmitted module, which is addressed by the transistorchips array.
     重点给出了经薄膜晶体管阵列编址的液晶显示光阀表盘 ,即可控透光模板的构造、性能及其对微立体光刻成形装置层面加工分辨率和截面曝光尺寸的影响。
短句来源
  相似匹配句对
     Flexible Transistor Arrays
     柔性晶体管阵列
短句来源
     Transistor
     晶体管
短句来源
     Avalanche Injection Transit Time Transistor
     崩越晶体管
短句来源
     The Mierolen Array
     微透镜阵列
短句来源
     Study on the Technique about Thermal Resistance and Burn-in of Transistor Arrays
     对晶体管阵列热阻和电老炼相关技术的探讨
短句来源
查询“晶体管阵列”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  transistor arrays
Terahertz excitation of the higher-order plasmon modes in field-effect transistor arrays with common and separate two-dimensiona
      
We report experimental measurements from large transistor arrays with device sizes typical for digital and analog VLSI systems (areas between 9 and 400μm2).
      
Bipolar transistors are fabricated with different combinations of silicon oxide and silicon nitride and the yield of large transistor arrays is compared with the calculated pressure for the different combinations.
      
We report experimental measurements from large transistor arrays with device sizes typical for digital and analog VLSI systems (areas between 9 and 400μm2).
      
Designs with transistor arrays have greater success at lower frequencies.
      
更多          
  transistor array
The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination.
      
Integrated-circuit bipolar transistor array for fluid-velocity measurements
      
A 6x6 transistor array was chosen to supply sufficient power to be detected by the ground station.
      
A circuit implemented on a Programmable Transistor Array topology was also synthesized to provide a target response.
      
The R>amp;D trend for active transistor array has moved towards OTFT with flexibility and low manufacturing cost.
      
更多          


In this paper,to begin with,the performances of amorphous-silicon material and ploysilicon material are compared,and then the process for fabricating poly-SiTFTs and progress in Process are described

本文首先就用来制造有源矩阵液晶显示器的非晶硅和多晶硅材料作了性能比较,然后描述了多晶硅薄膜晶体管阵列的制造方法,以及在制造方法上取得的进展。

This paper describes Darlington stage arrayULN2800 series and through practical examplesintroduces a simple way of using them to interfacehigh-consume elements supplied with lager-circuit andhigh-voltage with low-logic-voltage digital circuits.

本文通过实用的例子介绍了ULN2800系列达林顿晶体管阵列及其在实现有负载要求的较大电流、较高电压器件与低逻辑电平数字电路接口中的应用的简单方法。

A multi channel high power driving amplifier is described in the paper.Consisting of 7 Darlington transistor arrays,associated resistor networks and clamping diode networks,the device is capable of driving 7 loads simultaneously.It is a monolithic bipolar high power,high speed integrated circuit,which has an operating voltage more than 50 V,an output current larger than 500 mA,an on state delay time less than 1 0 μs,current amplification factor...

A multi channel high power driving amplifier is described in the paper.Consisting of 7 Darlington transistor arrays,associated resistor networks and clamping diode networks,the device is capable of driving 7 loads simultaneously.It is a monolithic bipolar high power,high speed integrated circuit,which has an operating voltage more than 50 V,an output current larger than 500 mA,an on state delay time less than 1 0 μs,current amplification factor greater than 1000 and an operating temperature range between -55~125 °C.

介绍了一种多路大功率驱动放大电路。该电路由七组达林顿晶体管阵列和相应的电阻网络以及箝位二极管网络构成,具有同时驱动七组负载的能力,是一种单片双极型大功率高速集成电路,适用于各类要求高速大功率驱动的系统。其工作电压大于50V,输出电流大于500mA,开态延迟时间小于1.0μs,关态延迟时间小于1.0μs,电流放大倍数大于1000,温度范围为-55~125°C。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关晶体管阵列的内容
在知识搜索中查有关晶体管阵列的内容
在数字搜索中查有关晶体管阵列的内容
在概念知识元中查有关晶体管阵列的内容
在学术趋势中查有关晶体管阵列的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社