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   台阶生长 在 无线电电子学 分类中 的翻译结果: 查询用时:0.99秒
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台阶生长
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  step-flow growth
    Strained-layer step-flow growth mechanism was proposed for BST epilayer grown on YBCO surface with a mismatch between the BST and the YBCO epilayers.
    在YBCO薄膜表面形成梯形结构后,也可能按照台阶生长(step flow)模型生长出完好的BST薄膜。
短句来源
  step-flow growth
    Strained-layer step-flow growth mechanism was proposed for BST epilayer grown on YBCO surface with a mismatch between the BST and the YBCO epilayers.
    在YBCO薄膜表面形成梯形结构后,也可能按照台阶生长(step flow)模型生长出完好的BST薄膜。
短句来源
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  step-flow growth
TEM also reveals the step-like film morphology due to step-flow growth.
      
The first monolayer grows in the step-flow growth mode since second layer islands are not nucleated before completion of the wetting layer.
      
Step-terrace on substrate surface acts as a preferential nucleation site for adatoms, which leads to step-flow growth.
      
With a step decrease of S, a step-flow growth mode of both 4H-and 6H-SiC was obtained and, for the first time in case of epitaxial SiC growth, a homogeneous nucleation of α-SiC at more C-rich conditions has been realized.
      
For simplicity, consider the step-flow growth of a thin film with an average step width l.
      
更多          
  step-flow growth
TEM also reveals the step-like film morphology due to step-flow growth.
      
The first monolayer grows in the step-flow growth mode since second layer islands are not nucleated before completion of the wetting layer.
      
Step-terrace on substrate surface acts as a preferential nucleation site for adatoms, which leads to step-flow growth.
      
With a step decrease of S, a step-flow growth mode of both 4H-and 6H-SiC was obtained and, for the first time in case of epitaxial SiC growth, a homogeneous nucleation of α-SiC at more C-rich conditions has been realized.
      
For simplicity, consider the step-flow growth of a thin film with an average step width l.
      
更多          


The result on 6H SiC(0001) (3×3) R 30° surface obtained by low\|energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T\-4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the \!best\|fit structure\" obtained by analysis of 10 non\|equivalent normal incidence beam sets is...

The result on 6H SiC(0001) (3×3) R 30° surface obtained by low\|energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T\-4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the \!best\|fit structure\" obtained by analysis of 10 non\|equivalent normal incidence beam sets is \%S1∶S2∶S3=15∶15∶70\%. The values of average \%R\%\-\{VHT\}=0.165 and \%R\%\-P=0.142 indicate that the surface growth was consistent with the mechanism of step\|flow growth corresponding to total energy minimum.

低能电子衍射 (LEED)对 6H SiC(0 0 0 1) (3× 3)R30°表面的研究结果表明 ,该表面有 1/3单层的Si原子吸附在T4 空位上与第一个SiC复合层中的三个Si原子键接 ,它们之间的垂直距离为 0 171nm .通过对该表面 10个非等价垂直入射衍射束的自动张量低能电子衍射 (ATLEED)计算 ,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态 (surfacetermination)的混合比例为S1∶S2∶S3 =15∶15∶70 ,理论计算与实验I V曲线比较得到可靠性因子RVHT=0 .16 5 ,RP=0 .142 ,表明表面生长符合能量最小化的台阶生长机制

The experiment proves that plasma ionizing in different oxidants is critically important for depositing the ZnO film.High quality c axis oriented single crystal films are grown using CO 2 and O 2 as oxidant,respectively.The ionizing efficiency as a function of the exciting potential,pressure for different oxidant gases is calculated.The influences of the concentration of oxygenic ions on the deposition velocity and growth quality are studied theoretically by the step flow model.Due to the results of...

The experiment proves that plasma ionizing in different oxidants is critically important for depositing the ZnO film.High quality c axis oriented single crystal films are grown using CO 2 and O 2 as oxidant,respectively.The ionizing efficiency as a function of the exciting potential,pressure for different oxidant gases is calculated.The influences of the concentration of oxygenic ions on the deposition velocity and growth quality are studied theoretically by the step flow model.Due to the results of XRD,PL,AFM and AES,high ionizing efficiency of CO 2 oxidant gives S1 sample exhibits a lower growth rate and smoother surface.While sample S2,which uses O 2 as its oxidant,obtains high structure properties.This confliction reveals the unavoidable problem of the nonlinear optimization of film properties with respect to the concentration of oxidant ions and contaminations introduced by oxidants.

使用 CO2 、O2 氧源得到了 Zn O择优取向薄膜样品 ,实验证实了小尺寸的交流高压离化器件确实能够为低压金属有机物化学气相沉积 (L P- MOCVD)生长 Zn O薄膜提供有效的离化氧源支持 .运用电晕放电模型和 Zn O薄膜台阶生长模型研究了离化效率对电压、气压和不同氧源气体的依赖关系及负氧浓度对生长速率和薄膜质量的影响 .对 X射线衍射谱、光致发光谱、原子力显微镜和俄歇电子能谱的分析表明 ,CO2 氧源由于离化效率较高 ,负氧浓度较大 ,使得生长速率较慢 ,薄膜表面较为平坦 ,但表面 C污染影响了薄膜内部质量 ;而 O2 氧源样品取向更接近(0 0 0 2 )衬底取向 ,样品内部应力较小 ,晶格常数更接近正常化学配比的 Zn O单晶 ,这表明最优负氧浓度的存在和气源带来的污染是 Zn O生长中必须考虑的问题 .

Interface structures of Ba_(0.7)Sr_(0.3)TiO_3/YBa_2Cu_3O_(7-δ)(BST/YBCO) films epitaxially grown on (001) SrTiO_3 substrate by DC magnetron sputtering and pulsed laser deposition were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). Step-terrace structure was formed at the interfaces of BST/YBCO. Investigation showed that a perfect single crystalline epilayer of BST was achieved. Strained-layer step-flow growth mechanism was proposed for BST...

Interface structures of Ba_(0.7)Sr_(0.3)TiO_3/YBa_2Cu_3O_(7-δ)(BST/YBCO) films epitaxially grown on (001) SrTiO_3 substrate by DC magnetron sputtering and pulsed laser deposition were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). Step-terrace structure was formed at the interfaces of BST/YBCO. Investigation showed that a perfect single crystalline epilayer of BST was achieved. Strained-layer step-flow growth mechanism was proposed for BST epilayer grown on YBCO surface with a mismatch between the BST and the YBCO epilayers.

本文利用透射电子显微学和高分辨电子显微学研究了SrTiO3衬底上的Ba0 7Sr0 3TiO3 YBa2Cu3O7-δ(BST YBCO)外延薄膜的界面结构。结果表明在BST YBCO界面形成了阶梯(step terrace)结构,同时BST外延膜生长良好。在YBCO薄膜表面形成梯形结构后,也可能按照台阶生长(step flow)模型生长出完好的BST薄膜。

 
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