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异质结晶体管     
相关语句
  heterojunction transistor
     Selective Doped Heterojunction Transistor
     选择性掺杂异质结晶体管
短句来源
     DEPLETION MODE SELECTIVE DOPED HETEROJUNCTION TRANSISTOR
     耗尽型选择性掺杂异质结晶体管
短句来源
     InP Heterojunction Transistor
     InP异质结晶体管
短句来源
     Depletion Model Selective doped heterojunction transistor is designed and fabricated.
     设计和研制了耗尽型选择性掺杂异质结晶体管
短句来源
  heterojunction bipolar transistor
     A Simulator for Ge_xSi_(1-x) Alloy Base Heterojunction Bipolar Transistor——GSHBT
     Ge_xSi_(1-x)合金基区异质结晶体管模拟器——GSHBT
短句来源
     Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor
     低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管
短句来源
     The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied.
     研究了 1 MeV 不同剂量电子辐照前后 SiGe 异质结晶体管(HBT)的直流特性,并与 Si 双极晶体管(BJT)进行了比较。
短句来源
     An InGaP/GaAs Negative Differential Resistance Heterojunction Bipolar Transistor with a New Structure
     一种新型结构的InGaP/GaAs负阻异质结晶体管
短句来源
     A thin base (8nm) InGaP/GaAs dual heterojunction material is grown by MBE and a heterojunction bipolar transistor (HBT) with negative differential resistance (NDR) is fabricated.
     采用MBE方法生长了8nm基区的InGaP/GaAs双异质结材料,研制成具有负阻特性的异质结晶体管.
短句来源
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  heterojunction bipolar transistors
     Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors
     Si/SiGe/Si双异质结晶体管(HBT)的负阻特性
短句来源
     Analytical Model of Current and Frequency Performance in SiGe-base Heterojunction Bipolar Transistors
     SiGe基区异质结晶体管电流和频率特性的解析模型
短句来源
     The heterojunction barrier effects(HBE) in Si/SiGe/Si double heterojunction bipolar transistors (DHBTs) at various temperatures are studied. It is found that HBE becomes more evident with the increase of the valence-band discontinuity △Ev at the BC heterojunction.
     本文研究了不同温度下Si/SiGe/Si双异质结晶体管(DHBT)异质结势垒效应(HBE),研究发现,集电结(BC)处价带能量差△Ev越大,HBE越明显,在给定的△Ev下,随着温度的降低,HBE越显著。
短句来源
     Technologies for optimizing the speed of SiGe heterojunction bipolar transistors (HBT) are presented in the paper.
     从理论分析角度介绍了优化SiGe异质结晶体管速度的方法。
短句来源
     Large- scale Heterojunction Bipolar Transistors were fabricated by using AlGaInP/GaAs HBT material grown by MOCVD. DC characteristics of AlGaInP/GaAs SHBT and AlGaInP/GaAs DHBT were studied. In addition, the collector- emitter offset voltages of AlGaInP/GaAs HBT were investigated, and several electrical factors affecting the offset voltage were discussed in detail.
     制备了大尺寸AlGaInP/GaAsSHBT和DHBT,对其直流特性进行了测试,并分析了AlGaInP/GaAs单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响AlGaInP/GaAsHBT开启电压(Voffset)的各个因素。
短句来源
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  “异质结晶体管”译为未确定词的双语例句
     GaAsSb/InP HBT Growth on InP Substrates
     基于InP衬底的GaAsSb/InP异质结晶体管
短句来源
     As an example of the material selection, the potentials of the cutoff frequency fT and the maximum frequency of oscillation fmax for Ge/GaAs, Si/a-Si, GaAs/GaAlAs and InGaAsP/InP HBTs are analyzed and compared.
     文章以晶体管的特征频率f_T和最高振荡频率f_(max)为例分析和比较了Ge/GaAs,Si/α-Si,GaAs/GaAlAs,InGaAsP/InP四种异质结晶体管的频率特性潜力。
短句来源
     Simulation and Experimental Study of NDRHBT
     负阻异质结晶体管(NDRHBT)的模拟与实验研究
短句来源
     Designs and Performances of HBTs
     异质结晶体管的设计与性能
短句来源
     Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor
     Si/SiGe/Si双异质结晶体管异质结势垒效应(HBE)研究
短句来源
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  heterojunction transistor
Gallium arsenide heterojunction transistor integrated circuits for a limiting amplifier and synchronizer
      
Design of gallium arsenide heterojunction transistor integrated circuits for a limiting amplifier and synchronizer is considered.
      
An improvement of monolithically integrated photodiodes in a p-type substrate of a commercial high-speed 0.35 μm SiGe heterojunction transistor (HBT) BiCMOS technology, with a supply voltage of 5 V, is presented.
      
  heterojunction bipolar transistor
As an example of such heterostructure devices, in general, the first practical bandgap-engineered silicon device, namely, the SiGe heterojunction bipolar transistor, is discussed in more detail.
      
A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure
      
A high-performance microwave power SiGe heterojunction bipolar transistor (HBT) was made from the n-Si/i-p+-i SiGe/n-Si structure.
      
A non-selective SiGe heterojunction bipolar transistor growth process at 700 °C has been developed, which combines n-type doping for the Si collector, p-type doping for the SiGe base and n-type doping for the Si emitter cap.
      
Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor
      
更多          
  heterojunction bipolar transistors
Three mathematical models for the thermal damage of semiconductor structures with a single junction (diodes, FETs, single-heterojunction bipolar transistors, and photodiodes) are characterized.
      
A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model
      
The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors
      
Furthermore, the small temperature coefficient of the current gainβ allows the use of these heterojunction bipolar transistors (HBT) over a wide temperature range.
      
Within this context this work presents the design and test results of a high-speed analog SISO (Soft-Input Soft-Output) channel decoder for an 8-bit trellis code by exploiting the high-speed features of SiGe heterojunction bipolar transistors (HBTs).
      
更多          
  heterojunction device
This paper uses a two-carrier heterojunction device simulator to determine the carrier profiles during optical pumping.
      
Flux dependent R0A products are shown to be a direct result of bias dependent quantum efficiency, a mechanism that is much more evident in heterojunction device architectures.
      
GaN growth on 6H-SiC was investigated for heterojunction device applications.
      
The basic device structure is an MBE-grown p-on-n heterojunction device.
      
This inherent polarity of the device results in conversion efficiency in a bilayer heterojunction device is very low reversed bias current densities.
      
更多          


In this paper, a novel InGaAsP-InP heterojunction bipolar transistor which is fully compatible with 1.55uuuuum DH InGaAsP-InP laser forming a transistor-laser device in monolithic integrated circuits is proposed and evaluated. The main feature of the transistor is the adoption of a CdO thin film as a wide gap emitter for the transistor in conjunction with an InP wide gap collector forming the NpN double heterojunction bipolar transistor. Experimental results showed that the transistor could be operated bilaterally...

In this paper, a novel InGaAsP-InP heterojunction bipolar transistor which is fully compatible with 1.55uuuuum DH InGaAsP-InP laser forming a transistor-laser device in monolithic integrated circuits is proposed and evaluated. The main feature of the transistor is the adoption of a CdO thin film as a wide gap emitter for the transistor in conjunction with an InP wide gap collector forming the NpN double heterojunction bipolar transistor. Experimental results showed that the transistor could be operated bilaterally with a forward current gain hfet = 40 (VcE= 5V, Ic = 1mA) and a reverse current gain hfer=8(VcE=1.5V, Ic = 100μ.A) obtained. Other results including hfe-Ic behavior and I-V characteristics of the CdO-InGaAsP emitter are presented.

本文提出和研制了一个新型的InGaAsP/InP双极型晶体管.在单片集成电路中它能与1.55μmInGaAsP/InP双异质结激光器共容而组成一个晶体管-激光器器件.该晶体管的主要特点是采用氧化镉(CdO)薄层作为器件发射区,由InP组成收集区而形成NpN双异质结晶体管.测量结果表明晶体管能双向工作,测得的正向共发射极电流增益为40(V_(CE)=5V,Ic=1mA),反向增益为8(V_(CE)=1.5V,Ic=100μA).文中还给出了h_(fe)—I_c特性和晶体管CdO-InGaAsP发射结的伏安特性.

In this paper, the design principle of heterojunction bipolar transistors (HBTs), including energy band gap design and semiconductor material selection as well as device structure design, are discussed in more detail. The energy band design focuses on wide gap emitter, graded base and various type of wide gap collector. As an example of the material selection, the potentials of the cutoff frequency fT and the maximum frequency of oscillation fmax for Ge/GaAs, Si/a-Si, GaAs/GaAlAs and InGaAsP/InP HBTs are analyzed...

In this paper, the design principle of heterojunction bipolar transistors (HBTs), including energy band gap design and semiconductor material selection as well as device structure design, are discussed in more detail. The energy band design focuses on wide gap emitter, graded base and various type of wide gap collector. As an example of the material selection, the potentials of the cutoff frequency fT and the maximum frequency of oscillation fmax for Ge/GaAs, Si/a-Si, GaAs/GaAlAs and InGaAsP/InP HBTs are analyzed and compared. Finally, conventional mesa, planar and up-side-down structures for HBTs are analysed and compared for their advantages. The state -of-art and the new development of HBTs are briefly described as well.

本文较详细地讨论了异质结晶体管的设计原理、材料选用和结构设计。在能带设计方面对宽发射区、缓变基区和多种收集区分别进行了讨论,比较了不同能带结构的优缺点。文章以晶体管的特征频率f_T和最高振荡频率f_(max)为例分析和比较了Ge/GaAs,Si/α-Si,GaAs/GaAlAs,InGaAsP/InP四种异质结晶体管的频率特性潜力。文章最后对目前常用的台面结构、平面结构、倒置结构作了介绍,并分析了它们的优缺点,简介了异质结的发展现状和发展方向。

The paper details the high frequency performances and the advantages of the processing of a Si/a-Si heterojunction bipolar transistor (HBT). the processing of the HBT is briefly presented. Our preliminary experimental results reveal that the Si/α-Si emitter has a low recombination rate resulting in a slow drop, current gain, and that the Si/α-Si HBT provides hfe = 12(VCE = 10V,Ic=lmA) and BVcE0= 20V.

本文较详细地分析了Si/α-Si异质结晶体管(HBT)的微波性能和工艺优点,简述了工艺过程,初步实验结果证实:Si/α-Si HBT具有较好的小电流特性,晶体管的h_(fe)=12(V_(CE=10V,I_C=1mA),BV_(CEO)=20V。

 
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