助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   电容-电压法 的翻译结果: 查询用时:0.483秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

电容电压法
相关语句
  相似匹配句对
     The Capacitance-Current Method of H.V. Impulse Measurement
     测量冲击电压电容电流
短句来源
     A PARTIAL VOLTAGE METHOD
     部分电压
短句来源
     Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions
     电化学电容-电压表征等离子体掺杂超浅结
短句来源
     Humidity-Measuring Method by Comparison of Capacitances
     电容比较式湿度测量
短句来源
     Complex Number Voltage Measuring Method of Capacitive Sensors
     电容传感器的复数电压测量
短句来源
查询“电容-电压法”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  c-v measurement
Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement
      
Using I-V characteristics and C-V measurement, the non-linearity coefficient and the potential barrier height were found to be 15.6, 0.82 eV, respectively.
      
Capacitance-voltage (C-V) measurement of the film revealed that the equivalent oxide thickness was about 1.3 nm.
      
The electric field-induced antiferroelectric-to-ferroelectric (AFE‐FE) phase transformation behaviour was examined by C-V measurement.
      
The fixed oxide charge about 1.0 × 1011 cm-2 was also measured from the high frequency C-V measurement.
      
更多          


The density of gap states in GD-a-si∶H films was studied by high f-requency capacitance-voltage(H-C-V)method.The distribution of the gap.states density was obtained from flat band to exhaust.The electron affin-ity qxa and energy band figure of amorphous silicon/crystalline silicon h-eterojunction were also investigated.

用高频电容——电压法(H—C—V)研完了 GD—a—si∶H 的隙态密度,得到了平带到耗尽范围内的隙态密度分布,研究了 a—Si∶H 的电子亲和势 qx_a=3.35ev 及 a—Si∶H/n—C—Si 异质结能带图.

The formation and characterization of Ti/Si, Ni/Si and Cr/Si metal silicides are inverstigated using X-ray diffraction Analysis, Auger electron spectrum and electrical measurements. Current-Voltage and Capacitance-Voltage measurements are employed to characterize the Schottky barriers of TiSi2/n-Si, NiSix/n-Si and CrSi2/n-Si, which have the barrier heights of 0.61eV, 0.66eV and 0.66eV, respectively. Their ideality factor close to unity. The power Schottky diodes have excellent electrical properties using metal...

The formation and characterization of Ti/Si, Ni/Si and Cr/Si metal silicides are inverstigated using X-ray diffraction Analysis, Auger electron spectrum and electrical measurements. Current-Voltage and Capacitance-Voltage measurements are employed to characterize the Schottky barriers of TiSi2/n-Si, NiSix/n-Si and CrSi2/n-Si, which have the barrier heights of 0.61eV, 0.66eV and 0.66eV, respectively. Their ideality factor close to unity. The power Schottky diodes have excellent electrical properties using metal silicides technology.

本文用X射线衍射(XRD)方法、俄歇电子能谱(AES)分析和电学测量方法研究了Ti/Si、Ni/Si和Cr/Si三种结构的金属硅化物的形成和特性。用电流—电压法和电容—电压法测量分析了TiSi_2/n-Si、Nix/n-Si和CrSi_2/n-Si三种肖特基势垒二极管特性,其势垒高度分别为0.61eV、0.66eV和0.66eV,理想因子均接近1。用此项技术制作的金属硅化物—n型硅肖特基功率二极管有优异的电学性能。

Voltage transients due to the thermal electron capture and emission of DX centers in n type Sn doped Al 0.26 Ga 0.74 As were measured by the constant capacitance technique and transformed by Laplace defect spectroscopy (LDS). By analyzing the variations of discrete emission rates with different capture periods, corresponding relations between discrete capture and emission rates and capture coefficients were determined. The fine structures of electron capture barriers of the Sn related DX centers...

Voltage transients due to the thermal electron capture and emission of DX centers in n type Sn doped Al 0.26 Ga 0.74 As were measured by the constant capacitance technique and transformed by Laplace defect spectroscopy (LDS). By analyzing the variations of discrete emission rates with different capture periods, corresponding relations between discrete capture and emission rates and capture coefficients were determined. The fine structures of electron capture barriers of the Sn related DX centers were obtained by linear fitting the data of temperature dependences of the capture coefficients. The results calcuated by using the first principle pseudopotential method show that the fine structures of the capture barriers mainly contribute to Al/Ga at different local configurations near Sn atoms due to the alloy random effect.

采用定电容电压法 ,测量了n型Al0 2 6 Ga0 74 As∶Sn中DX中心电子热俘获瞬态 ,以及不同俘获时间后的电子热发射瞬态 ;并对瞬态数据进行数值Laplace变换 ,得到其Laplace缺陷谱 (LDS) .通过分析LDS谱 ,确定了电子热俘获和热发射LDS谱之间的对应关系 ,从而得到热俘获系数对温度依赖关系 ,以及与Sn相关的DX中心部分电子热俘获势垒的精细结构 ;通过第一原理赝势法计算表明 ,Sn附近的Al Ga原子的不同配置是电子热俘获势垒精细结构产生的主要原因

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关电容-电压法的内容
在知识搜索中查有关电容-电压法的内容
在数字搜索中查有关电容-电压法的内容
在概念知识元中查有关电容-电压法的内容
在学术趋势中查有关电容-电压法的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社