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直流等离子体
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  dc plasma
     Studies on Dc Plasma CVD of TiN upon the plug gauge from a H_2—N_2—TiCl_4 gas mixture have been reported in this paper.
     在H_2、N_2和TiCl_4蒸气气氛中,用直流等离子体化学气相沉积法,在塞规上沉积TiN涂层的应用进行了研究,结果表明: ①等离子体化学气相沉积TiN工艺适用于塞规的镀膜。
短句来源
     Using an industrial type set-up of pulsed DC plasma chemical vapor deposition the Ti-Si-N coating on high speed steel (W18Cr4V) was performed. The effect of N2 flow on microstructure and interfacial bonding strength was investigated.
     用工业型脉冲直流等离子体增强化学气相沉积(PCVD)设备,在高速钢(W18Cr4V)表面沉积Ti-Si-N三元薄膜,研究了不同N2流量对薄膜组织及性能的影响.
短句来源
     Using pulsed DC plasma chemical vapor deposition technology, the Ti(C, N) films on H13 steel were prepared under different CH4 atmospheres.
     用工业型脉冲直流等离子体化学气相沉积(PCVD)设备,针对不同混合气体CH_4所占比例,在H13模具钢表面沉积了Ti(C,N)薄膜。
短句来源
     THE STUDY OF DISCHARGE CHARACTERISTICS OF DC PLASMA TORCH
     直流等离子体炬放电特性研究
短句来源
     This paper introduces the lastest system of 100kw high power DC plasma jet CVD diamond film,and it was researched successfully by the fund of the state “863” pruject.
     本文介绍了在863新材料领域资助下最新研制成功的100kw级高功率直流等离子体喷射(DCPlasmaJet)金刚石膜沉积系统。
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  direct current plasma
     Plasma modification is consisted of Ar-H2 plasma etching and Ar-H2-CH4 plasma decarburizing, experiments have been done on direct current plasma spraying CVD device.
     等离子改性处理工艺包括Ar-H_2等离子体刻蚀脱碳、Ar-H_2-CH_4等离子体渗碳处理,实验在直流等离子体射流CVD装置上进行。
短句来源
     Si3N4 film can be deposited on the samples which were put on the cathode and anode of DC-PCVD(direct current plasma chemical vapor deposition) device by controlling processing parameter.
     使用直流等离子体化学气相沉积(DC-PCVD)装置,控制合适的工艺参数,可对置于其阴阳极上的试样沉积出以Si3N4为主要成份的薄膜。
短句来源
     This article investigates that Zn, Mn, Cu, Fe and Ca in human hair are determined simultaneously by direct current plasma atomic emission spectrometry.
     研究了直流等离子体原子发射光谱法同时测定人发中的Zn,Mn,Cu,Fe,Ca。
短句来源
     Through Several different methods of surface tre atment,including solvent wiping,unsaturated polyester atom ash coating modifica tion Ar~+ direct current plasma surface bombardment modification and Ar/O_2 ra dio frequency plasma surface bombardment modification,the adhesion between PUF and poleyster c oating was improved.
     采用了几种不同的表面处理方法,溶剂擦拭法、不饱和聚酯原子灰裱糊改性法、Ar~+直流等离子体表面轰击改性法以及Ar/O_2射频等离子体表面轰击改性法等, 提高了聚氨酯泡沫塑料(PUF)与聚酯涂层的附着力。
短句来源
     Using direct current plasma enhanced chemical vapor deposition (PCVD) techniques, the nanocomposite films of nc-TiN + α-Si3N4 were synthesized.
     用直流等离子体增强化学气相沉积设备在不锈钢表面沉积纳米晶TiN和纳米非晶Si3N4复相薄膜.
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  “直流等离子体”译为未确定词的双语例句
     The plasma modillcation processes in the experiment including removing carbon from carbides and introducing carbon into the surface layer were canied out in the atmosphere consisting of Ar-H2 plasma and Ar-H2-CH4 plasma respectively.
     等离子改性工艺包括Ar-H_2等离子体刻蚀脱碳、Ar-H_2-CH_4等离子体渗碳处理,试验在高功率直流等离子体射流CVD装置上进行。
短句来源
     Nanocomposite thin films composed of nano-crystalline TiN and nanosized amorphous Si3N4 were deposited on W18Cr4V substrate using an industrial set-up of pulsed-DC plasma enhanced chemical vapor deposition technique.
     用工业型脉冲直流等离子体增强化学气相沉积技术,在高速钢(W18Cr4V)表面沉积了Ti-Si-N复合薄膜,研究了Ti-Si-N复合薄膜的微观组织和力学性能。
短句来源
     In order to restrict the nitrogen absorption, the test was carried out by using DC nitrogen plasma torch (100 kW) and Ti xO B 2O 3 Na 2O system slag as protecting media.
     为防止氮等离子体弧加热钢液而引起的钢液吸氮,用100kW直流等离子体炉研究了TixO-B2O3-Na2O系保护渣对钢液吸氮的影响。
短句来源
     Superhard silicon carbon nitride (Si-C-N )Coatings were successfully deposited on substrate of high speed steel using SiCl4/CH4/N2/H2 mixture by an industrial pulsed d. c. plasma chemical vapor deposition set-up.
     用脉冲直流等离子体增强化学气相沉积(PCVD)方法,采用SiCl4/CH4/N2/H2/Ar混合气体在高速钢试样表面沉积出Si-C-N薄膜材料。
     Method:DCP-AES was used to determine the contents of Zn、Cu、Fe、Mn、Se in:①Keloids、hypertrophic scars、flat scars and normal skins;
     方法:应用三电极直流等离子体-原子发射光电直读光谱仪检测:①瘢痕疙瘩、增生性瘢痕、扁平瘢痕、正常皮肤组织的Zn、Cu、Fe、Mn、Se5种微量元素含量;
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  dc plasma
In the present paper the experimental data are compared with the results of a calculation of the local and integrated heat and gasdynamic properties of a dc plasma generator with a longitudinally injected arc.
      
Such dust oscillations have been observed in the sheath region of a radiofrequency or dc plasma discharge at very low pressures.
      
A new dc plasma source for MBE growth of GaAsN layers is suggested.
      
The surface of the aluminum panel was treated by DC plasma.
      
The CFRP was surface-treated by Ar+ ion irradiation in an oxygen environment and the aluminum was surface-treated using a DC plasma.
      
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  direct current plasma
They also evaluated plasma and erythrocyte concentrations of the cation through direct current plasma spectrometer.
      
A three-electrode direct current plasma as compared to an inductively coupled argon plasma
      
A direct comparison of some analytical properties of a three-electrode direct current plasma and an inductively coupled argon plasma in the case of pneumatic nebulization of aqueous solutions was performed.
      
Strong molecular band systems of OH, NH, and N2+ were observed in the case of the direct current plasma.
      
The effect of sodium upon line and background intensities was investigated and found to be generally higher in the direct current plasma.
      
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The GaAs-Nb-Mo-Au Schottky barrier diodes have been fabricated on epitaxialGaAs layers by electron beam evaporation of Nb and then D. C.plasma sputtering ofMo and Au.The compositional depth profiles and the interfacial characteristics ofthese diodes are measured by XPS associated with Ar ion etching.The results obtainedare as follows:The interdiffusion between Au and GaAs can be prevented if the thi-ckness of the sputtered Mo layer is larger than 1000 A.The pure Nb layer no longerexists as a result of the Mo...

The GaAs-Nb-Mo-Au Schottky barrier diodes have been fabricated on epitaxialGaAs layers by electron beam evaporation of Nb and then D. C.plasma sputtering ofMo and Au.The compositional depth profiles and the interfacial characteristics ofthese diodes are measured by XPS associated with Ar ion etching.The results obtainedare as follows:The interdiffusion between Au and GaAs can be prevented if the thi-ckness of the sputtered Mo layer is larger than 1000 A.The pure Nb layer no longerexists as a result of the Mo interdiffusion.This leads to a structural change of ori-ginal GaAs-Nb-Mo-Au into a GaAs-(Nb, Mo, Ga, As)-Mo-(Mo, Au)-Au multilayer.Inthe transition region of the interface,Mo exists in the metal form,and the Nb atomsform a low valence oxide after chemical reaction with the native oxide on GaAs surface.The fact that the thermal stability of MoNb-GaAs Schottky barrier is better than thatof Mo-GaAs structure is presumed to be related to the larger heat of formation of theNb oxides.

在GaAs外延层上用电子束蒸发Nb及直流等离子体溅射Mo和Au的办法,制备了GaAs-Nb-Mo-Au结构的肖脱基势垒二极管.用XPS结合氩离子刻蚀测量了它的成分深度分布及界面特性,得到:当溅射Mo层厚度大于1000 A时,Au和GaAs之间的互扩散可以被阻挡住.Mo向Nb中的扩散使单独的Nb层不复存在,二极管成为GaAs-(Nb,Mo、Ga、As)-Mo-(MoAu)-Au结构.在界面过渡区中,Mo以金属形式存在,而Nb则同GaAs表面的天然氧化层反应后生成为低价的氧化铌.MoNb-GaAs肖脱基势垒比Mo-GaAs结构热稳定性好的原因,可能是同Nb氧化物的高生成热相联系的.

Studies on Dc Plasma CVD of TiN upon the plug gauge from a H_2—N_2—TiCl_4 gas mixture have been reported in this paper. The conclusions are following: ⅰ) The technique of PCVD of TiN can be used for well—plating films in plug gauges. The coated plug gauge, precision of which is in accord with demands of origind design, can be directly put into use without any pretreatment. ⅱ) The service life of plug gauges made of 45~# steel with 1μm films of coated TiN by PCVD can increase over 5 times than the service life...

Studies on Dc Plasma CVD of TiN upon the plug gauge from a H_2—N_2—TiCl_4 gas mixture have been reported in this paper. The conclusions are following: ⅰ) The technique of PCVD of TiN can be used for well—plating films in plug gauges. The coated plug gauge, precision of which is in accord with demands of origind design, can be directly put into use without any pretreatment. ⅱ) The service life of plug gauges made of 45~# steel with 1μm films of coated TiN by PCVD can increase over 5 times than the service life of ones made of tool steel quenched.

在H_2、N_2和TiCl_4蒸气气氛中,用直流等离子体化学气相沉积法,在塞规上沉积TiN涂层的应用进行了研究,结果表明: ①等离子体化学气相沉积TiN工艺适用于塞规的镀膜。膜层厚度均匀性好。镀膜的塞规不需要任何镀后处理。几何形状完全符合精度要求,镀后的塞规可以直接投入使用。②在用45~#钢制造的塞规上,用直流等离子体化学气相沉积法镀1μm的TiN涂层,可以比工具钢经淬火制造成的塞规提高使用寿命5倍以上。

The technology and equipment for plasma chemical vapor deposition of TiN films were reported in the present paper. The effective deposition region in this equipment was φ 450×500mm, in which the variation of temperatures was less than 20℃ and the variation of thickness was less than 15%. The lifetimes of drills, punches, reamers and bearings were increased obviously after coating with a thin film of TiN.

本文报道中试规模的直流等离子体化学气相沉积氮化钛(PCVDTiN)工艺及设备。设备外形尺寸为φ700×700mm,有效镀膜区为φ450×500mm。在此区域内,温度不均匀性小于20℃,TiN膜厚不均匀性小于15%。对TiN膜的硬度、生长速率、显微组织、晶体结构以及TiN膜的成分进行了研究。经测试及实际应用证明,高速钢麻花钻头用本工艺涂镀TiN膜后,可提高寿命8.3倍。其它刃具、模具、轴承等涂镀TiN后寿命也明显提高。

 
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