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直流电导率
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  dc conductivity
     Thermoelectric power and DC conductivity of bulk As-Te,As-Te-Ge and (As_2Te_3)_(1-x)Ni_xchalcogenide glasses as function of temperature have been given in this paper.
     本文给出体样品As-Te、As-Te-Ge和(As_2Te_3)_(1-x)Ni_x 硫系玻璃半导体温差电动势率和直流电导率与温度的关系。
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     Thermoelectric power and DC conductivity of Co-Mn-Ni-O amorphous film as functions of temperature in the range of 200—330K are given in this paper.
     本文给出了Co-Mn-Ni-O非晶薄膜样品在200-330K温度范围内的温差电动势率和直流电导率与温度的关系。
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     Fe_2O_3-SrO-TeO_2 glass was prepared by the press-quenching method and dc conductivity of the glass was measured.
     用准急压冷法制成Fe_2O_3-SrO-TeO_2系半导体玻璃并对其直流电导率进行了测定。 玻璃形成范围为(以摩尔计);
短句来源
     The ac conductivity spectra were measured in the temperature range from 313 to 473K for a Y2O3-stabilized ZrO2 (YSZ). Then the dc conductivity was deduced and its temperature dependence analyzed.
     在313~473K温度范围内测定了一种Y2O3稳定ZrO2材料(YSZ)的交流电导率谱,进而导出了材料的直流电导率并分析了其随温度的变化关系.
短句来源
     The study on the Green's function of amorphous semiconductors shows that theelectronic wave function is of multifractallity at the mobility edge,which influence the temporal decay of quantum wavepackets of the eigen wavefunction,and results in the fracton dimension dependent dispersive character of the DC conductivity near the localized threshold in amorphous semiconductors.
     该分形结构上的格林函数与态密度的联系中充分体现了系统的分形特征。 在非晶半导体的迁移率边,非晶半导体的本征波函数具有多标度分形性质,并深刻地影响到迁移率边波函数本征态量子波包的时间衰降,导致了直流电导率在迁移率边发生局域化转变的阈值附近表现出依赖分形子维数的色散特征。
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  direct current conductivity
     Electronic conductor mechanism of Bi4Ti3-xNbxO12+x/2 was analyzed by the Arrhe-nius fit of direct current conductivity vs temperature.
     通过对材料直流电导率与温度关系的Arrhenius拟合,分析丁Bi4Ti3-xNbxO12+x/2的导电机理.
短句来源
     The spectrum curve of optical absorption coefficent is measured by transmission method. The optical energy gap obtained from the relationship of (αhv)~(1/2)-hv is 1.45eV. On the other hand, the relationship between the direct current conductivity and temperature, and the relationship between the alternative current conductivity and frequency are measured.
     用透射法测量了吸收系数光谱曲线,并从(ahv)~(1/2)与hv关系图求得光学禁带宽度为1.45eV。 另一方面,测量了直流电导率与温度的关系以及交流电导率与频率的关系。
短句来源
     Based on tight-binding disordered model,a direct current electronic hopping transport conductance model of one-dimensional disordered system was established,and the direct current conductivity formula was derived.
     在单电子紧束缚无序模型基础上,建立一维无序材料电子跳跃输运直流电导率计算模型,并推导其直流电导率计算公式;
短句来源
     By calculating the direct current conductivity of different disordered states,the relationship between the disorder and conductivity was analyzed,and the role of disorder in direct current conductivity of disordered materials was discussed.
     通过计算材料的直流电导率,分析不同无序形式下无序度对材料直流电导率的影响,探讨无序在材料电子输运中的本质作用。
短句来源
     The results show that the direct current conductivity decreases with the increase of the degree of disorder in diagonal disordered system,and there is oscillatory property in weak disorder region.
     计算结果表明,在对角无序情况下,无序材料的直流电导率随着无序度的增加而减小;
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  “直流电导率”译为未确定词的双语例句
     Seebeck coefficient measurements results show that the glass is of n-type semiconductors, conductivity of the glass σ lies in the range from 3.72×10 ̄(-5) to 1. 82×10 ̄(-6)S·cm ̄(-1) at 473K.
     通过Seebeck系数的测定确认Fe_2O_3-SrO-TeO_2系玻璃为n型半导体玻璃。 200℃的直流电导率为3.72×10 ̄(-5)~1.82×10 ̄(-6)S·cm ̄(-1)。
短句来源
     In this study, direct current (DC) conductivities in the system which was composed of the clay fraction (<2μ) of variable charge soil and electrolyte solution with a concentration of 0.35×10~(-4)—1.3×10~(-4) mol/L were measured within the range of 5—50℃.
     本工作选用二种可变电荷土壤粘粒(<2μ),分别含有0.35×10~(-4)-1.3×10~(-4)mol/L的不同电解质,在不同含水量下,在5—50℃范围内测量其直流电导率的变化。
短句来源
     The specimen of La_(1-x)M_xCoO_3(M=Ca,Mg,Sr,x=0.2,0.4,0.6) were obtained by solid state reactions. The conductivity of specimen was measured by four probe method.
     采用固相反应法合成中温固体氧化物燃料电池阴极材料La1-xMxCoO3(M=Ca,Mg,Sr,x=0.2,0.4,0.6),用四探针法测试了样品在不同温度下的直流电导率和不同频率下的交流电导率。
短句来源
     The in plane conductivity of these LB films on quartz substrate and the vertical conductivity on ITO glass have been determined to be ca. 10-5S·m-1 and 10-9S·m-1, respectively.
     LB膜具有导电各向异性,其平面和垂直直流电导率分别为10~(-5)S·m~(-1)和10~(-9)S·m~(-1);
短句来源
     x—ray diffraction and scanning—electron—microscope experiments show that the B—doped silicon films prepared at about 635℃ may be of both amorphous and microcrystal structures and σ_d is 10~2Ω~(-1)·cm~(-1) under room temperature.
     X射线衍射和扫描电镜实验表明:在635℃左右生长的样品可能存在非晶和微晶的混合相,样品的室温直流电导率(σ_d)达10~2Ω~(-1)·cm~(-1)。
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  dc conductivity
It is found that the dc conductivity strongly depends on xonly for glasses with x≥ 10.
      
For glasses with x≤ 5, the dc conductivity is virtually composition independent.
      
The ac conductivity represented in these coordinates depends on xonly for glasses with x≤ 5, in which the dc conductivity does not depend on x.
      
In many amorphous and liquid semiconductors and other class of materials, the Meyer-Neldel rule is observed in the dc conductivity, where the preexponential factor (σ0) is found to increase exponentially with the activation energy (ΔE).
      
The ac conduction of most disordered materials shows a regime of constant dc conductivity σ(0) at low frequencies and a crossover to a frequency-dependent regime of the type Aωs at high frequencies.
      
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  direct current conductivity
Direct current conductivity studies on poly(3-methyl thiophene)
      
The values of the activation energies of the direct current conductivity, the transition frequency and the relaxation frequency are found to be the same within experimental uncertainty in the temperature range 457-523?K.
      
Direct current conductivity was measured in the temperature range of 303-373?K, and the conductivity was found to increase with the increase in dopant concentration as well as temperature.
      
The direct current conductivity activation energy predicted from this model is found to be consistent with the experimentally obtained value.
      
When the volume percent of dispersed phase is small, the direct current conductivity depends mainly on the continuous phase.
      
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By using the Debye-Hückel equation and the Poisson equation, the almost one-dimensional ionic conductive behaviors of α-LiIO3 have been analysed theoretically. The current across the boundaries between the crystal and metallic electrodes is con-sidered to be limited by rate processes. The asymmetry of the ± c-directions due to spontaneous polarization of the crystal has been taken into consideration. The explicit expression derived for the apparent DC conductivity is satisfactory in explaining the characteristic...

By using the Debye-Hückel equation and the Poisson equation, the almost one-dimensional ionic conductive behaviors of α-LiIO3 have been analysed theoretically. The current across the boundaries between the crystal and metallic electrodes is con-sidered to be limited by rate processes. The asymmetry of the ± c-directions due to spontaneous polarization of the crystal has been taken into consideration. The explicit expression derived for the apparent DC conductivity is satisfactory in explaining the characteristic behavior of α-LiIO3, e.g., the dependence of conductivity on applied voltage, as shown experimentally in [1]. The functional relationship between the AC dielectric constant and the bias field (cf. [1]) is interpreted partially by following the approach given in [2]. It is also pointed out that the weak current constantly flowing through the wire connecting the end surfaces of opposite polarity of an α-LiIO3 single crystal (cf. [3]), as well as similar phenomena observed in our own laboratory on poled ferroelectrics such as Baχ Sr1-χ Nb2Oσ (χ ~ 1/3), are caused by the crystal-line polarity EMF. This BMF coexists with the spontaneous, polarization P3.

本文考虑到a-LiIO_3电导的强烈各向异性,利用一维Debye-Huckel方程和泊松方程,导出了表观直流电导率,解释了文献[1]中有关α-LiIO_3的各种静态电导特性。推导中假设晶体界面处的电流由速率过程决定,并考虑了晶体两端的不对称性(电极性)。并援引文献[2]中有关动态介电常数的结果,部分解释了文献[1]中有关α-LiIO_3在加直流偏压场和不加偏压场的介电行为。文中指出,文献[3]中提到的联结α-LiIO_3晶体两极性面观察到持续不变的微弱电流,以及我们实验室观察到成极的铁电晶体铌酸锶钡也有同样现象,均来源于晶体极性电动势。这一电动势与晶体的自发极化P_s同时存在。

The frequency dependence of A.C. conductance of organic solid thin films have been discussed. It is pointed out that the dependence of conductance on the square of frequency is an artifact due to the electrode contact resistance and the capacity of the film. In this paper a method of an added external resistance is proposed to evaluate the electrode contact resistance and thereby the experimentally measured frequency dependences of conductance and capacity of the film could be corrected for the effect of electrode...

The frequency dependence of A.C. conductance of organic solid thin films have been discussed. It is pointed out that the dependence of conductance on the square of frequency is an artifact due to the electrode contact resistance and the capacity of the film. In this paper a method of an added external resistance is proposed to evaluate the electrode contact resistance and thereby the experimentally measured frequency dependences of conductance and capacity of the film could be corrected for the effect of electrode contact resistance. In order to characterize the A.C. conductance of organic solid thin films three parameters are suggested. That is, the D.C. specific conductance σd.c. at extremely low frequencies, the exponent n in the expression σ(f)∝ fn for the region of higher frequencies and the value of fx at which the straight line on the lgσ-lgf plot intersects the horizontal line σ=σd.c. For a solution cast film of poly-vinylcarbazole (PVK)-2,4,7-trinitrofluorenone (TNF) (1:0.75) charge transfer complex and an evaporated film of copper phthalocyanine (PcCu) the following results were obtained:

本文讨论了有机固体薄膜交流电导的频率依赖性,指出在较高频率下,电导正比于频率两次方的依赖性,是由于电极接触电阻和薄膜电容所引致的假象。作者建议了一种外加串联电阻法来求取电极接触电阻值,从而使电导和电容的频率依赖性实验数据得到改正。提出了表征有机固体薄膜交流电导特性的三个参数,即在极低频下的直流电导率σ_(d.c.)值、在较高频区σ(f)∝f~n中的n值和在lgσ-lgf图上高频区直线与σ_(d.c.)水平线的交点f_x。对聚乙烯咔唑(PVK)-2,4,7-三硝基芴酮(TNF)(1:0.75)电荷转移复合物薄膜和酞菁铜(PcCu)蒸发膜进行实验测定的结果,得到PVK-TNF(1:0.75):(σ_(d.c)=1.9·10~(-16)(Ω·cm)~(-1),n=0.96,f_=6.1·10~(-3)Hz(14℃);PcCu:σ_(d.c.)=1.6·10~(-9)(Ω·cm)~(-1),n=1.2,f_x=1·10~5Hz(17℃)。

In this paper, we have verified that the KLiSO4 single crystal is a Li ionic conductor. It was determined that carriers in KLiSO4 single crystal are interstitial Li ions and Li vacancies by measuring the voltage distribution in the specimen. After turning off the applied dc voltage, the decrease of current follows a negative power law of time in a certain time domain. Correspondingly, the dielectric dispersion which has a negative power relationship with frequency has also been found in a certain frequency domain....

In this paper, we have verified that the KLiSO4 single crystal is a Li ionic conductor. It was determined that carriers in KLiSO4 single crystal are interstitial Li ions and Li vacancies by measuring the voltage distribution in the specimen. After turning off the applied dc voltage, the decrease of current follows a negative power law of time in a certain time domain. Correspondingly, the dielectric dispersion which has a negative power relationship with frequency has also been found in a certain frequency domain. The background current, the dc electric conductivity and the apparent dielectric constant of KLiSO4 single crystal exhibit sharp peaks besides jump nearby the transition temperature. These peaks were observed only when the rate of temperature change is low, thus it is shown that the phase transition includes a relaxation process.

我们证实了KLiSO_4为Li离子导体。通过测定样品中的电位分布,确定其载流子为间隙Li离子和Li空位。其电流弛豫在一定时域内遵从负幂次衰减规律。与之对应,在一定频域内存在与频率成负幂次关系的介电色散。在相变温度附近,本底电流、直流电导率和表观介电常数除发生跃变外还出现一个尖锐的小峰。此峰只有在变温速率较慢时才能观察到,表明该相变具有弛豫过程。

 
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