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生长炉     
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  growth furnace
     Design of Growth Furnace for Low Dimensional Organic Crystal
     有机低维单晶生长炉的设计
短句来源
     In order to realize the PID parameter self-tuning,a fuzzy self-tuning PID controller which follows the PID parameters optimizing laws,and uses fuzzy logics to do automatic on-line tuning of PID parameters is designed for the temperature control system of crystal growth furnace based on PID control and fuzzy control.
     为实现PID参数的自动整定,在PID控制和模糊控制的基础上,设计了一种用于晶体生长炉温度控制系统的模糊参数自整定PID控制器,该控制器基于PID参数的优化规律,利用模糊控制规则对PID参数进行在线的自动整定.
短句来源
     Flux Growth Furnace
     熔盐法晶体生长炉
短句来源
     In crystal growth experiment, PbI_2 single crystal was grown by Vertical Bridgman Method (VBM) in the two- temperature zone vertical growth furnace.
     晶体生长实验中,我们自行设计了双温区管式电阻生长炉,采用垂直布里奇曼法(VBM),以合成的PbI_2多晶为原料进行晶体生长。
短句来源
     In crystal growth experiment, AgGaS2 crystal was growen in special quartz ampoule by crucible descending method (B-S method). The equipments were used, which consist of a two-zone vertical growth furnace whose temperature gradient is tunable, a descending device with decelerating rate of 1:2000, a controlling system of electy and a temperature testing system using thermal couples.
     晶体生长实验中,我们利用上下温度梯度可调的二温区管式生长炉,1/2000减速比的旋转下降系统,电气控制系统和密集适时测温系统等,在特殊形状的石英生长安瓿中,采用坩埚下降法(B-S法),以合成的AgGaS_2多晶原料进行晶体生长。
短句来源
更多       
  crystal growth furnace
     In order to realize the PID parameter self-tuning,a fuzzy self-tuning PID controller which follows the PID parameters optimizing laws,and uses fuzzy logics to do automatic on-line tuning of PID parameters is designed for the temperature control system of crystal growth furnace based on PID control and fuzzy control.
     为实现PID参数的自动整定,在PID控制和模糊控制的基础上,设计了一种用于晶体生长炉温度控制系统的模糊参数自整定PID控制器,该控制器基于PID参数的优化规律,利用模糊控制规则对PID参数进行在线的自动整定.
短句来源
     Apply the new techniques designing the lifting and rotating system for big diameter GaAs crystal growth furnace. The structure and precise of the system is analysed.
     用新技术对大直径GaAs晶体生长炉的提拉及旋转系统进行设计,并对系统结构、运动精度进行综合分析。
短句来源
  growing furnace
     A SUPERCONDUCTINC MAGNET SYSTEM FOR GaAs CRYSTAL GROWING FURNACE
     砷化镓单晶生长炉用超导磁体系统
短句来源
     The fundamental method of thermal field design of sillcon mono-crystal growing furnace of 15 kg-rank instead of 1kg-rank, and the decompression technology adopted in the crystal pulling process of large capacity and long period of time are related in this paper.
     本文论述了硅单晶生长炉从1公斤级增长到15公斤级时,其热场设计的基本方法及大容量、长时间拉晶过程中采用的减压工艺。
短句来源
     On the basis of heat transfer property of the high temperature heat pipe,the mercury cadmium telluride(MCT) crystal material growing furnace was developed by the method of Bridgman crystal growth,and the qualified sample of MCT crystal material was manufactured by the use of the furnace
     根据这种高温热管的传热特性 ,结合Bridgman晶体生长法 ,研制了碲镉汞 (MCT)晶体材料生长炉 ,并利用该热管炉生长出了合格的 MCT晶体材料试样。
短句来源
  growing stove
     Fuzzy Control of a Quartz Growing Stove Based on DSP
     基于DSP的石英生长炉模糊控制
短句来源

 

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      growth furnace
    A temperature control system with a device for the dynamic switching-on of the heating elements of the growth furnace is described.
          
    Numerical analysis of global heat transfer with coupled thermal radiation and heat conduction is investigated in Czochralski silicon crystal growth furnace with curved diffuse and specular surfaces.
          
    Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers.
          
    The alloy composition gradually changes along the growth direction in the ingot, and this change is well explained by a temperature profile in the growth furnace.
          
    A rapid thermal annealer Heatpulse 210 and a manufacturing scale vertical oxide growth furnace Semitherm VT-1500 were utilized.
          
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      crystal growth furnace
    Numerical analysis of global heat transfer with coupled thermal radiation and heat conduction is investigated in Czochralski silicon crystal growth furnace with curved diffuse and specular surfaces.
          
    Development of the Commercial Crystal Growth Furnace began about 1990, initially under the direction of Professor Frederick Carlson.
          
    Modelling and decentralized control of a multizone crystal growth furnace.
          
      growing furnace
    A Bridgman-type crystal-growing furnace was used in this investigation.
          
    Oriented eutectic microstructures have been produced in the system Al2O3/ZrO2 using a Bridgman-type crystal-growing furnace.
          


    The composition control in the growth of Ga0.47 In0.53 As ternary material and the effect of some factors on the material composition are analyzed. Simple formula is given for practical applications. A suitable growth technique makes average deviation of transverse composition to be controlled within ±1.0%, longitudinal deviation within ±1.4% and average composition deviation between runs with single source within ±2%. Measurement of distribution coefficient shows that ternary epilayer growth is mainly dependent...

    The composition control in the growth of Ga0.47 In0.53 As ternary material and the effect of some factors on the material composition are analyzed. Simple formula is given for practical applications. A suitable growth technique makes average deviation of transverse composition to be controlled within ±1.0%, longitudinal deviation within ±1.4% and average composition deviation between runs with single source within ±2%. Measurement of distribution coefficient shows that ternary epilayer growth is mainly dependent on the composition diffusion not closely on the kinetics factors of the growth interface.

    本文分析了Ga_(0.47)In(0.53)As材料生长中影响材料组分变化的因素,简要地给出了生长合适组分外延层的料源配制公式及其应用结果.采用适当的生长工艺可使外延层的横向组分平均偏离控制在±1.0%以内,纵向组分平均偏离在±1.4%以内,一源多炉生长的炉间外延层组分的平均偏离在±2%以内.分凝系数测量结果说明:三元层的生长主要是与组分的扩散密切有关,而与生长界面的动力学因素关系不太紧密.

    In this paper, the expression of the microgravity at arbitrary point in a near-earth satellite was presented.The levels of microgravity of the first test of space material processing in the chinese recoverable satellite were analysed and approximately estimated.It is showed that the level of microgravity is less than 1×10~(-5)g_0 which varies quasisteadily with the period of orbit and is added by the random acceleration with amplitude less than 2×10~(-4)g_0.

    导出了近地卫星上任意部位微重力水平的表达式,分析和近似估算了利用我国返回式卫星进行首次空间材料加工试验时的微重力水平,表明是在按轨道周期变化的优于1×10~(-5)g_0的准稳态加速度上,迭加了幅度不超过2×10~(-4)g_0的随机加速度脉冲干扰。我国在1987年8月5日发射的返回式卫星上,首次搭载了一台空间晶体生长炉,在空间微重力条件下进行了以砷化镓为主的十项材料加工试验。为了对所得结果进行科学的分析,就必须知道晶体生长期间的微重力水平。本文结合卫星的实际运行参数给予了估算。

    In order to investigate the effects of micro-gravity on InSbcrystal growth,remelting ang regrowth of InSb crystal were carried out inspace.The experimental results unambiguously prove that high quality crystalcan be obtained under micro gravity condition and demonstrate the feasibilityof InSb crystal growth by using remaining heat on other side in multipurposefurnace.

    为了研究太空微重力环境对InSb 晶体生长的影响,在空间进行了InSb 晶体的重熔和再结晶实验。实验结果表明,空间可以生长出结构较完整、组份均匀的高质量单晶。另外还证明了利用多用途单晶生长炉内一侧余热进行单晶生长的可行性。

     
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