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区熔再结晶
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  zone melting recrystallization
     In this paper, we adopted rapid thermal chemical vapor deposition (RTCVD) and zone melting recrystallization (ZMR) methods to deposit polycrystalline silicon thin films and studied the preparation technologies of the solar cells on SiSiC and Al_2O_3 ceramic substrates by high temperature method.
     本文采用快速热化学气相沉积(RTCVD)和区熔再结晶(ZMR)相结合的方法,在SiSiC和Al_2O_3等陶瓷衬底上制备多晶硅薄膜,并初步探索了高温路线制备多晶硅薄膜太阳电池的相关工艺。
短句来源
     ZONE MELTING RECRYSTALLIZATION FOR POLYCRYSTALLINE SILICON THIN FILM SOLAR CELLS
     区熔再结晶制备多晶硅薄膜太阳电池
短句来源
     By means of zone melting recrystallization (ZMR) method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer.
     提出了一种简化的区熔再结晶方法,利用这种方法在非硅衬底获得了晶粒尺寸达到毫米级、致密的籽晶层。
短句来源
     ZMR (zone melting recrystallization) apparatus is introduced, and the processing characteristic of ZMR is studied.
     研究了区熔再结晶 (ZMR)设备及其工艺特点 .
短句来源
     By means of zone melting recrystallization (ZMR) method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer.
     经区熔再结晶(ZMR)后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。
短句来源
  zone melt recrystallization
     After growing SiO 2 layer with a certain thickness on heavy diffusion inactive C Si wafer, opening windows, then fabricating polycrystalline silicon thin film solar cells on it with Rapid Thermal Chemical Vapor Deposition(RTCVD) and Zone Melt Recrystallization(ZMR) method.
     在重掺杂非活性单晶硅片上生长一定厚度的SiO2 ,开窗口后作为衬底 ,利用快速热化学气相沉积(RTCVD)及区熔再结晶 (ZMR)方法制备多晶硅薄膜太阳电池。
短句来源
  “区熔再结晶”译为未确定词的双语例句
     Polycrystalline Silicon Thin Films on A1_2O_3 Substrates for Solar Cells
     Al_2O_3衬底上多晶硅薄膜的外延和区熔再结晶(英文)
短句来源
     Raman measurements show thatthe recrystallized silicon films are in tensile stress of about 0.9×10~2 dyne/cm~2.
     Raman谱测量表明区熔再结晶后硅膜中张应力很小,约为0.9×10~9 dyne/cm~2.
短句来源
     The key problem in development of ZMR (Zone-Melting-Recrystallization) SOI (Silicon-on-Insulator) technology is detecting of the temperature of the molten zone on silicon wafer.
     硅片上熔区温度的检测,是实现SOI(Silicon-on-Insulator)材料结构的区熔再结晶(ZMR)工艺的技术关键,也是技术难点之一.
短句来源
     Locallized Zone-Melting Recrystallization of Polycrystalline Silicon Films on Silicon Dioxide
     定域SOI区熔再结晶研究
短句来源
     The article emphasizes the fabrication technology of polycrystalline thin films of solar cell and makes research on the preparation method of polycrystalline thin films, rapid photo-thermal annealing under low temperature (RPTA) and rapid thermal chemical vapor deposition (RTCVD) on ceramic substrate under high temperature, growth of silicon film as well as zone-melting recrystallization (ZMR), attempts of solar cell on ceramic substrate by means of high temperature and makes exploration on new method of layer transfer under high temperature.
     本文着重研究用于太阳电池的多晶硅薄膜的制备技术。 本文研究了多晶硅薄膜的制备方法,低温下快速光热退火(RPTA)和高温下陶瓷衬底上快热化学气相沉积(RTCVD),硅膜的生长及区熔再结晶(ZMR),用高温方式在陶瓷衬底上做了太阳电池的尝试,在高温方式下做了层转移新方式的探索。
短句来源
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  zone melting recrystallization
Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film
      
Solid/liquid (S/L) interface patterns during stationary heating and zone melting recrystallization (ZMR) of a Si thin film were calculated by using a phase-field model.
      
Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film
      
Solid/liquid (S/L) interface patterns during stationary heating and zone melting recrystallization (ZMR) of a Si thin film were calculated by using a phase-field model.
      
Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution
      


Zone-melting recrystallization of polycrystalline silicon films deposited on SiO_2, substrateshas been carried out using a RF-induced graphite strip as the heater.The size of the grains inthe recrystallized silicon films are more than several hundred micrometers in width and as longas the size of the samples in length.There are many subgrain boundaries with spacings bet-ween 10-50 μm in the grains.Heat-sink structure and polycrystalline silicon thickness mo-dulation technique have been employed to entrain these...

Zone-melting recrystallization of polycrystalline silicon films deposited on SiO_2, substrateshas been carried out using a RF-induced graphite strip as the heater.The size of the grains inthe recrystallized silicon films are more than several hundred micrometers in width and as longas the size of the samples in length.There are many subgrain boundaries with spacings bet-ween 10-50 μm in the grains.Heat-sink structure and polycrystalline silicon thickness mo-dulation technique have been employed to entrain these subgrain boundaries,and very good re-sults have been obtained. TEM and SEM analyses indicate that the recrystallized silicon filmsare [100] orentation and have smooth surface and interfaces.Raman measurements show thatthe recrystallized silicon films are in tensile stress of about 0.9×10~2 dyne/cm~2.

用高频感应石墨条作为红外辐射热源,对淀积在二氧化硅衬底上的多晶硅进行了区熔再结晶.再结晶后硅膜晶粒宽度可达几百微米甚至几毫米以上,长度可在区熔扫描方向延伸到样品尺度.在晶粒中存在大量间隔约10-50μm的亚晶界.采用热沉技术及多晶硅膜厚调制技术对亚晶界进行了定域限制,达到了非常好的效果.TEM分析表明再结晶后硅膜呈[100]晶向.SEM观察表明再结晶后样品具有平整的表面及界面.Raman谱测量表明区熔再结晶后硅膜中张应力很小,约为0.9×10~9 dyne/cm~2.

In this paper, such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting -Recrystallization(ZMR).These techniques are the key points of ZMR-SOI technology. The mechanisms of defects localization of the two structures have been reviewed.

两种行之有效的晶粒间界限制技术:热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷,这是采用区熔技术制备SOI的技术关键和难点所在。本文讨论了两种结构限制晶界的机理。

The key problem in development of ZMR (Zone-Melting-Recrystallization) SOI (Silicon-on-Insulator) technology is detecting of the temperature of the molten zone on silicon wafer. A novel fibre pyrometer with advanced functions (high space resolution and easy aiming) has been proposed to suit the special experimental environment (high frequency, high voltage and high temperatureX which proves to be effective in enhancement of stability, controlling and reproducibility of ZMR technology.

硅片上熔区温度的检测,是实现SOI(Silicon-on-Insulator)材料结构的区熔再结晶(ZMR)工艺的技术关键,也是技术难点之一.提供了一种适用于特定实验环境(高频、高压、高温)的具有特殊功能(高分辨率、易于瞄准)的光纤测温计,对于提高ZMR工艺的稳定性,可控性和良好的重复性具有重要意义.

 
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