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光致发光性能
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  “光致发光性能”译为未确定词的双语例句
    The photoluminescence characterization of rare earths (Tb, Gd) embedded into porous silicon
    稀土(Tb,Gd)掺杂多孔硅的光致发光性能研究
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    Photoluminescence Performance of Zn~(2+)-Diffused Porous Silicon
    扩Zn~(2+)多孔硅的光致发光性能
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    Photoluminescence (PL) properties of hydrogenated amorphous silicon(a-Si:H)/hydrogenated silicon nitride(a-SiN_x:H)multilayers at 77K after annealing from300℃ to 800℃ are reported.
    本文报道了经300℃到800℃退火后的氢化非晶硅(a-Si∶H)/氢化非晶氮化硅(a-SiN_x∶H)多层膜77K 的光致发光性能
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    It has been proved that there exists Forster energy transfer process from PVK to Tb(BSA)3phen.
    并对该配合物的吸收特性及电致发光和光致发光性能进行了研究,实验数据表明在PVK与Tb(BSA)3phen之间存在着Forster能量传递.
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    The results of fluorescent spectra indicate that the Schiff bases of L_1, L_2, and L_3 possess strong luminescent properties. The excitation spectra of the Schiff bases have many fine characteristic excitation peaks and the maximal excitation wavelengths are 468 nm.
    荧光光谱表明固体粉末希夫碱的L1、L2和L3具有较强的光致发光性能,多个精细特征激发峰,其荧光强度大小顺序为L1>L2>L3。
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It is interesting to investigate the rare-earth (RE) ion activated ZnS phosphor because ZnS:Cu+, ZnS:Ag+ and ZnS:Mn2+ phosphors have high luminescence efficiency. Luminescence of ZnS:RE3 + has been well Studied by Some authors in various laborateries, but Eu2+ activated ZnS phosphor was seldom reported .In the investigation of RE activated ZnS material systems, we pay attention to the luminescence properties of the System which is activated by Eu2+ ions having f-d transition. We studied the preparation and fluorescence...

It is interesting to investigate the rare-earth (RE) ion activated ZnS phosphor because ZnS:Cu+, ZnS:Ag+ and ZnS:Mn2+ phosphors have high luminescence efficiency. Luminescence of ZnS:RE3 + has been well Studied by Some authors in various laborateries, but Eu2+ activated ZnS phosphor was seldom reported .In the investigation of RE activated ZnS material systems, we pay attention to the luminescence properties of the System which is activated by Eu2+ ions having f-d transition. We studied the preparation and fluorescence properties of ZnS:Eu2+ phosphor systematically.The preparation procedure of ZnS:Eu2+ was as follows. The dried mixture of ZnS with Eu(NO3)3 was put in a muff with two fused silica tubes. Sulfur and active cabon were placed in the gap between the two tubes. The mixture was fired in a furnace at the temperature of 1150-1200℃ for 1 hr .The concentration of Eu2+ in ZnS for all of the samples was about 0.07 a%.Spectral properties were discussed in detail and interesting afterglow was found for the first time. The emission spectra consist of a main band of 550 nm and a weak band of 650nm corresponding to 380nm and 338nm excitation bands, respectively. Thermoluminescence, the dependence of emission spectra on temperature and the effect of temperature on the decay time were observed. According to the results two kinds of associated europium center were presumed. The dependence of emission spectra of the phosphor on Cd2 + was also measured. It is considered that the short fluorescence lifetime is related to the electron traps in the band gap of ZnS. In addition, cathodoluminescence charatceris-tics were investigated too. It was found that ZnS:Eu2+ showed a long afterglow up to 50 ms, and its brightness dependence on applied voltage was better than standard P-1 Zn2SiO4:Mn phosphor. Therefore the phosphor ZnS:Eu2+ may be useful for industry in the future.

本文详细描述了ZnS:Eu~(2+)磷光体的合成及光致发光性能。首次报导了这种发光材料的特殊长余辉特性。作者测量了热释发光光谱、不同温度下的发射特性的变化及荧光的激发、发射衰减时间,提出两类缔合Eu中心的模型。用不同的缔合Eu中心较好地解释了它的光谱特性及长余辉现象,认为光谱的两个发射带来自不同的缔合Eu中心,即550nm发射带对与ZnS导带电子陷阱相缔合的Eu中心有关,650nm带来自与电子陷阱和空穴陷阱缔合的Eu中心。发射的余辉主要与导带中某种电源电子陷阱存在有关。此外,本文还对与应用有关的阴极射线发光性能进行了报导。

Photoluminescence (PL) properties of hydrogenated amorphous silicon(a-Si:H)/hydrogenated silicon nitride(a-SiN_x:H)multilayers at 77K after annealing from300℃ to 800℃ are reported.The decrease of 77K peak energy as T_(?) increases is dif-ferent for different samples,it is much Slower for multilayers with a-Si:H sublayerthicknesses of d_s=20(?).Tbe PL still exists for d_s=20(?) multilayers even it isannealed to 800℃,whereas PL disappears for single a-Si:H film and d_(?)=300 (?) multilayers at T_(?)=600℃.It is...

Photoluminescence (PL) properties of hydrogenated amorphous silicon(a-Si:H)/hydrogenated silicon nitride(a-SiN_x:H)multilayers at 77K after annealing from300℃ to 800℃ are reported.The decrease of 77K peak energy as T_(?) increases is dif-ferent for different samples,it is much Slower for multilayers with a-Si:H sublayerthicknesses of d_s=20(?).Tbe PL still exists for d_s=20(?) multilayers even it isannealed to 800℃,whereas PL disappears for single a-Si:H film and d_(?)=300 (?) multilayers at T_(?)=600℃.It is shown that the difference in PL for multilayers withvarying a-Si:H sublayer thicknesses is related with high thermal stability of a-Si:H/a-SiN_x:H interfacial hydrogen.The latter is also proved from annealing depende-nce of infrared absorption spectra of multilayers.

本文报道了经300℃到800℃退火后的氢化非晶硅(a-Si∶H)/氢化非晶氮化硅(a-SiN_x∶H)多层膜77K 的光致发光性能。77K 的光致发光峰值能量随 T_a 增加而减少,其减少速度对几种样品是不同的,由厚度为20(?)的 a-Si∶H 子层组成的多层膜(d_(?)=20(?))要来得慢。当退火温度达到800℃时,d_(?)=20(?)的多层膜仍保留有光致发光特性,而对于 d_(?)=300(?)多层膜和单层 a-Si∶H 膜,当退火到600℃后光致发光特性已消失。文中提出了不同 a-Si∶H 子层厚度的多层膜光致发光特性上的差别是与 a-Si∶H/a-SiN_x∶H 界面氢比体内氢热稳定性来得高有关。后者由多层膜的红外吸收谱与退火温度依赖关系得到证实。

ZnS∶Cu colloid optical properties, which vary with Cu + doping concentration and aging process, were studied in thiourea and thiosulfurate systems. Exited at 325nm, ZnS∶Cu colloid gives off a green band emission from 500 to 540nm, and the highest intensity appears in samples with doping concentration about 0.6%. The green emission band presents obvious red shift as the Cu + doping concentration increases, and it is also red shift with the increasing reaction time. For the samples doped with 0.2% Cu...

ZnS∶Cu colloid optical properties, which vary with Cu + doping concentration and aging process, were studied in thiourea and thiosulfurate systems. Exited at 325nm, ZnS∶Cu colloid gives off a green band emission from 500 to 540nm, and the highest intensity appears in samples with doping concentration about 0.6%. The green emission band presents obvious red shift as the Cu + doping concentration increases, and it is also red shift with the increasing reaction time. For the samples doped with 0.2% Cu +, a blue emission band at 450nm can also be observed besides the green one, and it will be quenched at higher doping concentration. The optical properties of thiourea and thiosulfurate system are quit similar, but the intensity of the latter is higher than that of the former.

研究了硫脲和硫代硫酸钠体系中ZnS∶Cu 纳米微粒的光致发光性能随Cu+ 离子掺杂浓度及生长时间的变化. 在325nm 的紫外光激发下, ZnS∶Cu 纳米微粒产生位于500~540nm 的宽带发射, Cu+ 掺杂浓度为0.6% 时发射达到最强. 该发射峰随掺杂浓度的提高和微粒生长时间的延长而红移; 当Cu+ 掺杂浓度为0.2% 时, ZnS∶Cu 纳米微粒还产生一个位于450nm 的蓝色发射带, 该发射在掺杂浓度更高时被猝灭. 硫脲和硫代硫酸钠体系中ZnS∶Cu 的发光性质较为相似, 但后者的发射强度明显高于前者.

 
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