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无序体系
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  disordered system
     The result shows that,like the electronic eigenvectors,the phonon eigenvectors in the disordered system are localized. And the degree of localization is related to the eigenfrequency,degree of disorder and number of lattices.
     结果表明与电子本征态分布一样,无序体系的声子态分布也具有局域性,且局域程度与本征频率的大小、体系无序程度以及系统大小有密切的关系.
短句来源
     Based on the disadvantage of the former electronic conductance theory applied on the disordered system, and considering the interaction between the phonon> electric field and electron, a EPF (Electron-Phonon-Field) conductance model of electronic tunnel transfer is set up, and new D. C and A.
     针对现有无序体系电子输运理论的不足,考虑了电子和声子、外场的相互作用,建立了EPF(electron-phonon-field)电子隧穿电导模型,推导了一维无序体系新的直流、交流电导公式。
短句来源
     A electron\|phonon\|field conductance model of electron tunneling transfer is set up, and a new alternating current conductance formula in one dimensional disordered system is derived.
     建立了electron phonon field(EPF)电子隧穿电导模型 ,推导了一维无序体系新的交流电导公式 .
短句来源
     Considering second-neighbour interaction,the distribution of vibrational eigenvectors in one-dimensional disordered system is calculated by means of lattice dynamics and a new algorithm for five diagonal matrix.
     应用点阵动力学的方法以及五对角对阵矩阵本征矢算法,考虑原子间次近邻相互作用,计算了一维无序体系的振动本征态的分布.
短句来源
     The energy band for Si-Ge alloy is calculated using a new computational model, from which a trial test of computing the electronic state in disordered system is made.
     用新的合金能带计算模型计算了锗硅合金的能带,对无序体系电子态的计算进行了一次初步的尝试.
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  disordered systems
     Effects of disorder and temperature on Fermi-energy of one-dimensional disordered systems
     无序度和温度对一维无序体系费米能的影响
短句来源
     were calculated. It is shown that met al Cu melts at 1 444 K during the heating process,and its diffusion constant is about 4.31×10-9 m2·s-1 at this melting point. These results are in better li ne with experiment than those of simulations using the embedded-atom method, wh ich indicates that the FS potential is suitable for disordered systems such as l iquid Cu.
     计算结果表明,在连续升温过程中,金属铜在1444K熔化,在该熔化点的扩散系数为4.31×10-9m2·s-1.上述结论与实验值相当接近,并且比之采用EAM镶嵌原子势所作模拟得到的结果更佳,说明FS势可以用来处理象液铜这样较复杂的无序体系.
短句来源
     THEORETICAL METHODS FOR DISORDERED SYSTEMS( I )
     无序体系的理论方法(Ⅰ)
短句来源
     Alternating current hopping conductivity studies on one-dimensional disordered systems
     一维无序体系的交流跳跃导电
短句来源
     This article reviews the theoretical methods for disordered systems, with special emphasis on numerical methods and the methods of averaged Green's functions.
     本文综合评述了无序体系的理论方法,包括数值计算方法,平均格林函数求解方法。
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  “无序体系”译为未确定词的双语例句
     THEORETICAL METHODS FOR DIRORDERED SYSTEMS(Ⅱ)
     无序体系的理论方法(Ⅱ)
短句来源
     The results show that the Fermi-energy decreases with increasing the degree of disorder,and the off-diagonal disorder has great effect on the Fermi-energy.
     结果表明:无序体系的费米能随无序度的增大而减小,并且非对角无序对体系费米能的影响很大,考虑非对角无序时,体系的费米能大大降低;
短句来源
     When the voltage or frequency of electric field is not so high, in low temperature region the conductivity is greater when the disordered degree is weaker.
     无序度对无序体系的电导影响明显:当外场电压或频率不太高时,在低温区,无序度越小,体系的电导率越大。
短句来源
     This work also provided a base for applying the method to study the dynamics and electronic structure of amorphous systems.
     这一工作也为用Recursion方法处理复杂结构无序体系问题提供了准备。
短句来源
     It was found that the properties of the system in the region whose distance from the boundary is greater than the localization length of the system can be reproduced.
     结果表明,在离边界距离大于局域长度的区域内,这种本征态能够重现无序体系的性质。
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  disordered system
Asymptotically accurate results are obtained for the average Green function and density of states of a disordered system for a renormalizable class of models (as opposed to the lattice model examined previously [I.
      
Localization and space-time dispersion of the kinetic coefficients of a two-dimensional disordered system
      
A generalization of the Vollhardt-W?lfle self-consistent localization theory is proposed to take into account spatial dispersion of the kinetic coefficients of a two-dimensional disordered system.
      
A correction to the electric field strength linear in magnetic field H was found by computations for a two-dimensional disordered system.
      
The experimental results are interpreted using the model of many-particle correlations of holes localized in quantum dots, which lead to the formation of electron polarons in a 2D disordered system.
      
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  disordered systems
Termination effect in X-ray diffraction studies of disordered systems
      
Normalization of intensity curves in X-ray diffraction by disordered systems
      
Effect of the features of the low-energy spectrum of vibrational states in disordered systems on the probability of the M?ssbaue
      
We study the effect of the additional density of vibrational states inherent in disordered systems on the M?ssbauer effect and the Debye-Waller temperature factor at temperatures of about 10 K.
      
Suppression of superconductivity close to the metal-insulator transition in strongly disordered systems
      
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Recently, Wu and his coworkers formulated an infinite order perturbation theory for solving the Green's function of a disordered system, using a diagrammatic technique. In this paper, the method of matrix partition is used to obtain the same series of recursion relations, thus providing an algebraic proof for the theory.

无限次微扰理论是求解无序体系格林函数的理论方法。此方法是吴式玉教授及其合作者们用“图式法”获得的。 本文采用把矩阵分块,求解子矩阵方程的方法,推导了这一理论的结果,从而给出了这一理论的矩阵代数证明。

This article reviews the theoretical methods for disordered systems, with special emphasis on numerical methods and the methods of averaged Green's functions.

本文综合评述了无序体系的理论方法,包括数值计算方法,平均格林函数求解方法。

The zone-variational method and energy band calculations f or Ⅳ group semiconductors are described in this paper. The energy bands for C, Si, and Ge obtained by this method are also given. On this basis the self-consistent energy band calculation and the empirically adjusted method are discussed, thus a general picture for the zone-variational method is shown. The energy band for Si-Ge alloy is calculated using a new computational model, from which a trial test of computing the electronic state in disordered...

The zone-variational method and energy band calculations f or Ⅳ group semiconductors are described in this paper. The energy bands for C, Si, and Ge obtained by this method are also given. On this basis the self-consistent energy band calculation and the empirically adjusted method are discussed, thus a general picture for the zone-variational method is shown. The energy band for Si-Ge alloy is calculated using a new computational model, from which a trial test of computing the electronic state in disordered system is made. Finally this method is compared with the existed computational methods for energy band in respects of the computa-tional ways and means, potential character and the matching of wave functions, from which the merits of this method is seen.

本文简要介绍了分区变分法和Ⅳ族半导体能带的计算,给出了金刚石、硅和锗的能带.在此基础上又讨论了自洽能带计算和经验调整能带计算方法,从而给出了分区变分法的一个完整的概貌.用新的合金能带计算模型计算了锗硅合金的能带,对无序体系电子态的计算进行了一次初步的尝试.最后从计算方法、势场特性和波函数衔接等方面对现有能带计算方法进行了分析和比较,从中看出分区变分法的优点.

 
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