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      电子能带结构     
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  electronic band structure
     Electronic band structure of ferroelectric SrBi_2Nb_2O_9
     铁电体SrBi_2Nb_2O_9电子能带结构的第一性原理研究
短句来源
     The electronic band structure of the high Tc superconductor YBa2Cu3O7 system, has been calculated by using LDF-LMTO method.
     本文用密度泛函理论和线性丸盒轨道方法计算了YBa_2Cu_3O_1系统的电子能带结构.
短句来源
     An analytical expression for the force constants of semiconductors with arbitrary hybridization is derived by using the bond orbital approximation to simplify the calculation of electronic band structure energy of the system.
     本文利用成键轨道近似简化电子能带结构能量的计算,导出了任意杂化下半导体力常数的解析表达式。
短句来源
     First-principles electronic calculations are used to study the electronic band structure and the half-metallic ferromagnetism of the RCrO4(R=Er and Tm) oxides. The Zircon RCrO4(R=Er and Tm) phases are found to be excellent half-metallic ferromagnets with large half-metallic gaps(up to 0.35 eV).
     用第一性原理研究了RCrO4(R=Er和Tm)氧化物的电子能带结构和半金属铁磁性,发现锆石相的RCrO4是优质的半金属铁磁材料,具有达到0.35eV的半金属能隙。
短句来源
     First-Principles Study on the Electronic Band Structure of Ferroelectric PbTiO_3
     钛酸铅铁电体电子能带结构的第一性原理研究
短句来源
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  electronic band structures
     The Electronic Band Structures of Complex Quantum Wells Ge_(0.3)Si_(0.7)/(Ge_(0.3)Si_(0.7))_m-(Si)_m/Ge_(0.3)Si_(0.7)
     复合量子阱Ge_(0.3)Si_(0.7)/(Ge_(0.3)Si_(0.7))_m-(Si)_m/Ge_(0.3)Si_(0.7)的电子能带结构
短句来源
     Research on Electronic Band Structures of Superlattices(Ge_2)_1/(GaAs)_m(110) with m=1-20
     超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构研究
短句来源
     The Electronic Band Structures of (110)-Oriented Superlattices(Al_xGa_(1-x)As)m/(GaAs)_m
     超晶格(Al_xGa_(1-x)As)_m/(GaAs)_m(110)的电子能带结构
短句来源
     Electronic band Structures of GaAs/Ge_xSi_(1-x) systems
     GaAs/Ge_xSi_(1-x)系统的电子能带结构
短句来源
     The electronic band structures of superlattices (Ge_2)_1/(GaAs)_m(110) with m=1-20 werecalculated by using the renormalization technique in tight-binding frame.
     在紧束缚的框架下,利用重整化方法计算了超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构
短句来源
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  electronic energy band structures
     Electronic Energy Band Structures of Superlattices (Ge_xSi_(1-x)_1 /Si_m (001 )
     超晶格(Ge_xSi_(1-x)1/(Si)_m(001)的电子能带结构
短句来源
     Electronic Energy Band Structures of Strained Ge_xSi_(1-x) Alloys on Si(001) Substrates
     生长在Si(001)衬底上的Ge_xSi_(1-x)合金的电子能带结构
短句来源
     ELECTRONIC ENERGY BAND STRUCTURES OF STRAINED GaAs LAYERS GROWN ON Ge_xSi_(1-x)(001) SUBSTRATES
     生长在Ge_xSi_(1-x)合金衬底(001)面上的应变GaAs层的电子能带结构
短句来源
     AbstractThe electronic energy band structures of strained GexSi1-x alloys onSi(001) substrates were calculated by tight-binding technique and compared withthose of GexSi1-x bulk alloys. The calculating results show that for the most ofalloy compositions (0
     采用紧束缚方法对生长在Si(001)衬底上的GexSi1-x合金形变层的电子能带结构进行了计算,并与GexSi1-x合金的能带结构进行了比较.计算结果表明,对大部分合金组分x(0≤x≤0.9),形变层的导带底处在△轴上;
短句来源
     The electronic energy band structures of strained GaAs layers grown on the GexSi1-x(001) substrates are calculated in tightbinding theoretical frame.
     采用紧束缚方法计算了GaAs/Ge_xSi_(1-x)(001)的电子能带结构.
短句来源
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  structure of electronic energy bands
     INVESTIGATION ON THE STRUCTURE OF ELECTRONIC ENERGY BANDS OF POLYDIACETYLENES
     聚二乙炔电子能带结构的研究
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      electronic band structure
    LMTO calculations of the electronic band structure showed that CaCo2 forms as a result of an s-d electronic transition of Ca and in the ground state it is a ferromagnet with a high magnetic moment per Co atom.
    例句来源      
    The electronic band structure of corundum (α-Al2O3) is calculated by the ab initio density functional method and compared with experimental results.
    例句来源      
    It is shown that, due to specific features of the AgBr electronic band structure, the probabilities of two-photon transitions for the light at λ = 560 nm are anomalously low, while those of four-photon transitions are anomalously high.
    例句来源      
    The results obtained are discussed in the frame of available information on the electronic band structure of these compounds.
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    Fundamental reflection spectrum and the electronic band structure of chlorine-doped CdTe
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      electronic band structures
    The general problems of an accurate a priori determination of electronic band structures are discussed.
    例句来源      
    The direct evaluation of electronic band structures of layered solids using angle-resolved photoemission
    例句来源      
    Electronic band structures and electronic properties of some substituted linear polyenes
    例句来源      
    Electronic band structures and electronic properties of some substituted linear polyenes
    例句来源      
    The electronic band structures of the rhombohedral-based boron compounds α-B12, B12P2 and B12 As2 have been investigated along all symmetry directions.
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      electronic energy band structures
    The electronic energy band structures of the Tl0.5Pb0.5Sr2Cu0y (y≈5) superconductor were calculated and the effect of the oxygen content on its electronic structures was studied in the present paper.
    例句来源      
    A review is given of the theoretical approaches that have been made to understand and describe the electronic energy band structures for protein molecules.
    例句来源      
    An outline is given of the theoretical approaches that have been made to understand and describe the electronic energy band structures for polynucleotides such as DNA and RNA.
    例句来源      
      其他



             In this paper, we introduced the concept of the interface plane wave orbits (IPWO). A method for calculating the interface electronic structure of heterometal superposed film was given. It is called MTO-IPWO-PWO Method.
                本文引入了“界面平面波轨道”概念(IPWO:Interface Plane Wave Orbits)。由此给出了计算异质金属复合薄膜电子能带结构的一种方法,我们称之为MTO-IPWO-PWO方法。
    文摘来源
             In this paper, a Scalar Eelativiatic Green's Function method ( SRA-KKR) neglecting spin-orbit coupling effect has been proposed for the energy band calculation. With this method, only a few modifications to the Non-Relativistic Green's Function method would be needed in order to obtain the relativiatic effect on the electronic band structure of solid.
                略去自旋轨道耦合效应,在标量相对论近似下本文提出了一个近似的、相对论格林函数电子能带结构计算法。用这个方法可以对非相对论格林函数计算电子能带结构方法稍加改变就得到相对论效应对电子结构的影响。
    文摘来源
             Based on the band theory, the BCS mechanism of superconductivity is still valid for Lanthanum. The principal factor resulting in the comparatively high superconductive transition temperature in Lanthanum is the large value, caused by d-p and d-f scattering. The abundance of / partial wave component in the band structure of Lanthanum and the unfavorable factor of its large atomic volume should attract further attention in the preparation of superconductive materials containing Lanthanum. It is not too m...
                通过能带理论分析肯定镧的超导机制仍是BCS机制.造成镧的超导转变温度较高的主要因素是值高,这是由d-p及d-f散射引起的.在镧的电子能带结构中较丰富的f分波以及镧的原子体积大这一不利处是在制备含镧超导材料中值得进一步注意的.可以说,镧是“f带”超导体典型之一.
    文摘来源
     
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