Experimental results also verify this point, thin - film SOI SRT sensor not only achieves promising device characteristics, the Tmax can be over 450℃, but also shows that the bias current of the thin - film SOI SRT sensor can be as low as 1μA, which is one thousand times less than that of bulk Si SRT sensor.
In this paper, a self consistent sub-donain decomposition method is performed to divide the defining region of process parameter super space, and an experimental design method is used to build the second order regression models of IC device characteristics with process parameters.
The simulation results indicate that the reverse leakage current and the dependence of the device characteristics on a critical thickness are reduced greatly,and the stability is improved by the incorporation of carbon atoms into SiGe/Si diodes,when the forward I-V and reverse recovery characteristics remain constant.
Based on the systematic and detailed analysis on the correlation between material structure parameters and device characteristic parameters,the design principle and design method on RTD material structure were established. And the MBE material structure on RTD for SI-GaAs substrate was designed by this design method.
In order to investigate the validity that the SiGe layer incorporated into deep submicron PMOSFET improves device performances, a strained Si 1-xGe x buried channel PMOS FET of 0.18 μm is simulated employing the MEDICI simulator, and compared with a conventional Si PMOSFET.
为研究深亚微米尺度下应变 Si Ge沟改进 PMOSFET器件性能的有效性 ,运用二维数值模拟程序MEDICI模拟和分析了 0 .1 8μm有效沟长 Si Ge PMOS及 Si PMOS器件特性。
The source to drain (S/D) tunneling current is included based on the ballistic transport model in this work,using WKB method to calculate the possibility of tunneling. The device performances of DG (dual gate) MOSFETs with very thin silicon films (thickness of 1nm) are simulated.
The relationship between device performances and insulator thickness is investigated using the model, and an optimum thickness of 2～2.3 nm for high-temperature application of around 300 oC is obtained by taking account of tradeoff among sensitivity, reliability and operation current/resolution.
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm
Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells
Beside the logical interface, also the physical interface to operators is of significance for interactive systems since physical device characteristics determine the suitability of a system for given interactive applications.
The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.
The device characteristics of the dielectrophoretically-aligned SWNTs are discussed.
The effectiveness of analytical results is illustrated with an example on the transition processes in a pulse phase-locked system with proportionally integrating filter and standard phase detector characteristics.
Charge accumulation in the protective oxide was responsible for this noise and affected the volt-ampere and volt-farad detector characteristics.
The detector characteristics have been investigated with an X-ray source.
The detector characteristics were measured in testing with natural-decay alpha particles with energies of 3.35 and 5.4 MeV.
The uniform boundedness and existence of a global periodic attractor for a third-order phase-locked loop with general phase detector characteristics and frequency modulation input is proved under some parametric conditions.