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器件特性     
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  device characteristics
     A Study on the Semiconductor Device Characteristics of Integral Protein
     Integral蛋白质半导体器件特性研究
短句来源
     Experimental results also verify this point, thin - film SOI SRT sensor not only achieves promising device characteristics, the Tmax can be over 450℃, but also shows that the bias current of the thin - film SOI SRT sensor can be as low as 1μA, which is one thousand times less than that of bulk Si SRT sensor.
     实验结果也验证了这一点,薄膜SOISRT传感器不仅具有非常好的器件特性,T_(maxm)高至450℃以上,而且它的工作偏置电流低至1μA,比体Si SRT传感器小10~3倍。
短句来源
     In this paper, a self consistent sub-donain decomposition method is performed to divide the defining region of process parameter super space, and an experimental design method is used to build the second order regression models of IC device characteristics with process parameters.
     本文用自适应子空间剖分方法进行工艺参数超空间定义域的分割,并利用试验设计方法建立集成电路器件特性与工艺参数的二次回归模型。
短句来源
     The simulation results indicate that the reverse leakage current and the dependence of the device characteristics on a critical thickness are reduced greatly,and the stability is improved by the incorporation of carbon atoms into SiGe/Si diodes,when the forward I-V and reverse recovery characteristics remain constant.
     结果表明:在SiGe/Si功率二极管中加入少量的C,在基本不影响器件正向I V特性和反向恢复特性的前提下,大大减少了器件的反向漏电流,并且C的加入还减小了器件特性对材料临界厚度的依赖性,提高了器件稳定性.
短句来源
     The main factors to limit conversion efficiency of CdTe solar cells are analyzed after the device characteristics were measured.
     结合器件特性表征分析了限制CdTe太阳电池转换效率的主要因素,提出高效率CdTe太阳电池的新结构。
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  characteristics of device
     As a result,how the parameters such as capacitor C,resistance R and voltage (V_a,V_g) effect on the characteristics of device is discussed.
     文中从自由能量出发对器件特性进行分析,从而得到电容、电阻以及电压等参数对库仑台阶及电导振荡的影响。
短句来源
  device characteristic
     The Application of CAD Technique in the Microelectronic Technology Design and Device Characteristic Analyses
     CAD技术在微电子工艺设计及器件特性分析中的应用
短句来源
     Based on the systematic and detailed analysis on the correlation between material structure parameters and device characteristic parameters,the design principle and design method on RTD material structure were established. And the MBE material structure on RTD for SI-GaAs substrate was designed by this design method.
     在系统细致分析RTD材料结构参数与器件特性参数关系的基础上,确立了RTD材料结构的设计原则和设计方法,并对以SI-GaAs为衬底的RTD分子束外延(MBE)材料生长结构进行了设计。
短句来源
     Influence of Temperatures and Radiation Dose Rate on CMOS Device Characteristic Parameter
     环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响
短句来源
     The IC processing and device characteristic CAD system are very important parts in the microelectronic CAD system.
     集成电路工艺及器件特性计算机辅助设计系统是微电子CAD系统的重要组成部分。
短句来源
     The present paper introduce mainly basic principle, device characteristic and making method of long-period fiber grating and outlines the application status in optical communication and sensor system.
     介绍长周期光纤光栅基本工作原理、器件特性和制备方法,同时对这种器件在光通信和传感系统中的应用状况作了简要概述.
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  device performances
     In order to investigate the validity that the SiGe layer incorporated into deep submicron PMOSFET improves device performances, a strained Si 1-xGe x buried channel PMOS FET of 0.18 μm is simulated employing the MEDICI simulator, and compared with a conventional Si PMOSFET.
     为研究深亚微米尺度下应变 Si Ge沟改进 PMOSFET器件性能的有效性 ,运用二维数值模拟程序MEDICI模拟和分析了 0 .1 8μm有效沟长 Si Ge PMOS及 Si PMOS器件特性
短句来源
     The source to drain (S/D) tunneling current is included based on the ballistic transport model in this work,using WKB method to calculate the possibility of tunneling. The device performances of DG (dual gate) MOSFETs with very thin silicon films (thickness of 1nm) are simulated.
     在经典弹道输运模型中引入源漏隧穿 (S/ D tunneling) ,采用 WKB方法计算载流子源漏隧穿几率 ,对薄硅层(硅层厚度为 1nm) DG(dual gate) MOSFETs的器件特性进行了模拟 .
短句来源
     Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
     管芯研究结果表明,在适当的退火条件下,离子注入掺杂制备浅结是改善器件特性较为理想的方法。
短句来源
     The relationship between device performances and insulator thickness is investigated using the model, and an optimum thickness of 2~2.3 nm for high-temperature application of around 300 oC is obtained by taking account of tradeoff among sensitivity, reliability and operation current/resolution.
     采用此模型 ,分析了器件特性与绝缘层厚度的关系 ,并在灵敏度、可靠性和工作电流 /电流分辨率诸因素之间其进行了优化设计 ,对于 30 0℃左右的高温应用 ,确定出最佳绝缘层厚度为2~ 2 .3nm。
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  device characteristics
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm
      
Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells
      
Beside the logical interface, also the physical interface to operators is of significance for interactive systems since physical device characteristics determine the suitability of a system for given interactive applications.
      
The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.
      
The device characteristics of the dielectrophoretically-aligned SWNTs are discussed.
      
更多          
  device characteristic
Despite its advantages, STI applies mechanical stress to the MOS transistor changing its electrical device characteristic.
      
Furthermore, we demonstrate that the electrical device characteristic is not influenced by the capping layer.
      
For a given fault current, the current is found on the horizontal axis and followed vertically to the device characteristic.
      
In fact the device characteristic and the circuit topology may be simultaneously determined for optimal silicon implementation and system performance.
      
Look-up tables create appropriate luminance grayscale steps, taking into account the device characteristic.
      
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  detector characteristics
The effectiveness of analytical results is illustrated with an example on the transition processes in a pulse phase-locked system with proportionally integrating filter and standard phase detector characteristics.
      
Charge accumulation in the protective oxide was responsible for this noise and affected the volt-ampere and volt-farad detector characteristics.
      
The detector characteristics have been investigated with an X-ray source.
      
The detector characteristics were measured in testing with natural-decay alpha particles with energies of 3.35 and 5.4 MeV.
      
The uniform boundedness and existence of a global periodic attractor for a third-order phase-locked loop with general phase detector characteristics and frequency modulation input is proved under some parametric conditions.
      
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