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tft器件
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  tft device
     Amorphous thin film transistor (a-Si TFT) electric model was developed with the conference of MOSFET and its I-V characterization was deduced based on that model. The TFT device was designed by synthesizing both the requisitions of TFT and LCD pixel, and as high as six decade On to Off state current ratio TFT was fabricated. A 3 inch diagonal a-Si TFT liquid crystal display panel was manufactured successfully.
     对于TFT器件的设计,首先建立了a-Si TFT的电学模型,综合TFT器件及液晶像素对信号驱动和图像显示的要求,优化设计并成功制备了开关比大于6个数量级的a-Si TFT及3英寸视频显示样机。
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  “tft器件”译为未确定词的双语例句
     The Preparation of ZnO Thin Films by L-MBE and the Study of ZnO-TFT
     L-MBE法制备ZnO薄膜及ZnO-TFT器件研究
短句来源
     Because P-Si TFT and MOS-FET have the same characteristics ,and CMOS circuit is the main technology of present integrate circuit for its simple configuration, low power consumption and high integrity.
     由于P-Si TFT 器件的特性与用于 LSI的 MOS-FET的特性相同,而CMOS电路以其结构简单规则、功耗低、集成度高等优点,成为当今集成电路的主流技术。
短句来源
     It was observed that the I-V characteristics of TFT were improved when In was doped into CdSe.
     实验中观察到 Cd Se掺 In后 ,TFT的 I - V特性明显得到改善 ,得到了性能稳定的 TFT器件
短句来源
     The on and off state hot carrier(HC) stress degradation characteristics and models of n-type LTPS-TFTs fabricated by metal-induced lateral crystallization(MILC) are investigated,respectively.
     从开态和关态两个方面,研究了热载流子(HC)应力下,N型金属诱导横向结晶(MILC)LTPS TFT器件退化特性及模型。
短句来源
     The models are applicable to the a-Si:H TFT devices with different process structures. The modeling procedure is useful to TFT designers.
     本论文建立的模型适用于不同工艺结构的a-Si:H TFT器件,对TFT的设计者具有较高的指导价值。
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  相似匹配句对
     Protection Devices
     保护器件
短句来源
     The Preparation of ZnO Thin Films by L-MBE and the Study of ZnO-TFT
     L-MBE法制备ZnO薄膜及ZnO-TFT器件研究
短句来源
     Active Matrix OLED Displays Using Simple Poly-si TFT Process
     采用简化多晶硅TFT工艺的有源矩阵OLED显示器件
短句来源
     Quantum Confined Device
     量子限制器件
短句来源
     Principle of TFT-LCD
     TFT液晶显示原理
短句来源
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  tft device
The Si-TFT device is not damaged during the laser irradiation process because the laser power is completely absorbed into the a-Si layer.
      


We have developed a new way to recrystallize poly-GeSi on SiO2. 180keV-Si+ion implantation with dose 2×1014cm-2 is used to amorphize the high quality poly-GeSi grown by RRH/VLP-CVD on SiO2. An amorphized region with damage distribution is formed, so we can systematically study the recrystallization properties of amorphized GeSi thin film. The results revealed the inducement of Ge in the recrystallization process. For the first time, we have observed the longitudinal recrystallization pattern of GeSi grains....

We have developed a new way to recrystallize poly-GeSi on SiO2. 180keV-Si+ion implantation with dose 2×1014cm-2 is used to amorphize the high quality poly-GeSi grown by RRH/VLP-CVD on SiO2. An amorphized region with damage distribution is formed, so we can systematically study the recrystallization properties of amorphized GeSi thin film. The results revealed the inducement of Ge in the recrystallization process. For the first time, we have observed the longitudinal recrystallization pattern of GeSi grains. After the recrystallization, the final GeSi grain sizes are greater than the poly-Si grain sizes in the same conditions.

本文发展了一种SiO2上多晶GeSi再结晶的方法,研究了其再结晶性质.由RRH/VLP-CVD系统在SiO2上生长的性能优良的多晶GeSi材料,经能量为180keV,剂量为2×1014cm-2的Si+离子注入非晶化处理后,形成具有一定损伤分布的非晶层.由此,我们系统研究了多晶GeSi非晶化后的再结晶性质,认为Ge在再结晶过程中可能起了的诱导晶化作用;首次观察到GeSi晶粒的纵向生长行为;得到的GeSi晶粒大于同样条件下得到的多晶Si晶粒.本项研究为多晶GeSi在高速TFT器件及其它高速器件中的应用奠定了基础,并为制备GeSi量子线结构提供了一条可能的途径.

In this paper, the optical and electrical properties of ITO films prepared by reactive D C magnetron sputtering dependent on various sputtering technology parameters are investigated The influence on the optical electrical properties of ITO films dependent on various oxygen partial pressures under vacuum annealed circumstance is also reported We obtained high quality ITO films with appropriate sheet resistance of 150~200Ω/□( d =100nm)and transmittance of over 85% which are satisfied for AMLCD application...

In this paper, the optical and electrical properties of ITO films prepared by reactive D C magnetron sputtering dependent on various sputtering technology parameters are investigated The influence on the optical electrical properties of ITO films dependent on various oxygen partial pressures under vacuum annealed circumstance is also reported We obtained high quality ITO films with appropriate sheet resistance of 150~200Ω/□( d =100nm)and transmittance of over 85% which are satisfied for AMLCD application at low substrate temperature and low sputtering power compatible with TFT devices preparation technology in AMLCD application

研究了直流磁控溅射法制备的ITO薄膜的光电特性与溅射工艺参数的关系以及退火处理对ITO薄膜光电特性的影响。在低衬底温度、低溅射功率下获得了优质的ITO薄膜,可见光透过率高于85%,在厚度为100nm时其方块电阻在150~200Ω/□之间,并且ITO薄膜的制备工艺完全与AMLCD中TFT器件的制作工艺兼容。

The reactive ion etching (RIE) in TFT was studied in this paper The etching-ratio of several films often used in TFT was provided, and the influence of other gases (such as Ar, H 2) to etching-ratio was discussed

TFT器件工艺中的反应性离子刻蚀技术进行了研究,给出了TFT器件工艺中常见薄膜刻蚀速率的实验结果,并讨论了掺杂气体(如H2、Ar等)对刻蚀速率的影响。

 
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