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压电器件
相关语句
  piezoelectric devices
    The obtained piezoelectric ceramics with excellent piezoelectric properties sintered at 950oC are expected as optional materials for high power piezotransformers and are helpful to decrease the cost of multilayer piezoelectric devices.
    通过低温烧结研究,获得的具有良好电学性能的950oC烧结的压电陶瓷,在大功率压电变压器上具有较好的应用前景,有助于降低多层压电器件的生产成本。
短句来源
  “压电器件”译为未确定词的双语例句
    Electromechanical Coupling Effects of Piezoelectric Laminated Devices
    层合结构压电器件的机电耦合效应
短句来源
    Electromechanical coupling effects of piezoelectric laminated devices
    层合结构压电器件的机电耦合响应
短句来源
    ZnO thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical, transparent and conductive performance.
    ZnO薄膜以其优良的压电性能、透明导电等性能在太阳能电池、压电器件、声表面波器件、气敏元件等诸多领域得到广泛应用。
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  piezoelectric devices
Various piezoelectric devices, which form an inseparable part in the progress of modern communication devices, television, radars, and several kinds of defence technology are being produced by the thousands in developed countries all over the world.
      
Analysis of the insulating, piezoelectric, and mechanical properties of the samples demonstrates that there is a group of solid solutions that are promising materials for high-temperature piezoelectric devices operating in the medium-frequency band.
      
Simulating the response of piezoelectric devices requires solving coupled electrical and mechanical partial differential equations.
      
A shape-memory-alloy actuator which memorizes the linear shape was used to realize a driving amount larger than those of electrostatic actuators and piezoelectric devices.
      
The films thus produced show a step forward in developing piezoelectric devices using more economic routes.
      
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>=Oriented ZnO piezoelectric films have been prepared on common polycrystalline brass substrates by atmospheric pressure metal organic chemical vapor deposition(AP-MOCVD). A simple growth model for the films is discussed after the SEM images of the film, results of XRD and the growth characteristics of ZnO were analyzed. The piezoelectric unimorphs were made by the ZnO films. By using the optical microscopy, it was observed that the tip of the unimorph was moved for a larger distance than the conventional unimorph....

>=Oriented ZnO piezoelectric films have been prepared on common polycrystalline brass substrates by atmospheric pressure metal organic chemical vapor deposition(AP-MOCVD). A simple growth model for the films is discussed after the SEM images of the film, results of XRD and the growth characteristics of ZnO were analyzed. The piezoelectric unimorphs were made by the ZnO films. By using the optical microscopy, it was observed that the tip of the unimorph was moved for a larger distance than the conventional unimorph. So the conventional model is invalid on this occasion. A new model is needed.

采用大气开放式金属有机化合物化学气相沉积(A-MOCVD)的方法,在普通多晶黄铜基片上制备ZnO薄膜.薄膜的SEM、XRD结果表明ZnO沿C轴取向垂直生长在基片上.综合分析ZnO自身晶体生长习性,提出了ZnO薄膜在普通多晶铜表面的生长模型.并将ZnO薄膜制备成压电双晶片元件,在光学正微镜下能观察到元件尖端产生了很大的位移量,结果表明高定向性ZnO薄膜具有优异的压电特性.该压电器件使得传统的小变形双晶片元件的数学模型失效,有必要建立新型大变形双晶片物理、数学模型.

 
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