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穿透位错
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  threading dislocation
     A surface threading dislocation density of about 5×105cm -2 is achieved for the SGOI samples.
     分析结果表明:SGOI样品表面的穿透位错密度约为5×105cm-2;
短句来源
     Densities of threading dislocation in the layer of top silicon of SIMOX wafer can be reduced by using oxygen ion implantation of low dose.
     低剂量氧离子注入能降低SIMOX硅片顶层硅中的间隙原子浓度,从而降低穿透位错的密度。
短句来源
     The threading dislocation density is reduced to almost zero in the area on mask.
     在SiO2 掩膜区生长的GaN,其腐蚀坑密度(相当于穿透位错密度 )减少到几乎为零。
短句来源
  threading dislocations
     The majority carrier peaks in samples with x= 0. 45 and 0. 53 are believcd to be caused by the threading dislocations induced by the partial relaxation of misfit strains.
     而应变部分弛豫的样品(X=0.45、0.53),DLTS测得的缺陷与前三种样品不同,样品的缺陷可能与形成的穿透位错有关。
短句来源
     The works are concentrated on yellow luminescence band, nanopipes, threading dislocations, cracks and precipitates in Ⅲ nitrides, and on fine structures of Fe energy levels and DX centers in Ⅲ V compounds.
     并着重展示对 族氮化物中黄色发光带、纳米管、穿透位错、龟裂和沉积物 ,以及 - V化合物中 Fe杂质和 DX中心能级精细结构等研究的结果 .
短句来源
     The misfit dislocations are pure edge dislocation and that can be transformed to threading dislocations via slip.
     失配位错为纯刃型位错,可通过滑移面的改变而形成穿透位错;
短句来源
     The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.
     侧翼区域中极低的穿透位错使得ELOG GaN适用于在其上制作高性能的氮化物基激光器.
短句来源
     Profile-fitting analyses indicate that the annealed ones have larger full widths at half maximum of (0002) rocking curve and lower densities of screw-type threading dislocations than the as-grown samples. A chemical etching experiment supports the above results.
     通过对各个样品的(0002)面摇摆曲线进行线形拟合及分析,发现虽然退火后摇摆曲线的半峰宽变大,但面外倾斜角(tilt)的值却变小,从而螺型穿透位错(TD)密度变小,这与化学腐蚀实验的结果一致.
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  threading dislocation
The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed.
      
After annealed, the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Transmission Electron Microscopy (TEM) analysis.
      
We assumed that oxygen diffuses along the threading dislocation lines, acts as a shallow donor and influences unintentional doping.
      
The threading dislocation density was estimated at 2×104?cm-2 for 500-nm Si0.75Ge0.25 grown on the 20% borosilicate glass substrate.
      
It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer.
      
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  threading dislocations
The results are presented of the fabrication of strain-relaxed graded Si1 - xGex/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (>amp;lt;106 cm-2) and low surface roughness.
      
Relaxed step-graded buffer layers of Si1-xGex/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure.
      
Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures
      
In the opposite case, it was necessary to introduce additional MD arrays that increased the probability of formation of threading dislocations in an epitaxial film.
      
The results obtained make it possible to suggest a method for the formation of thin SiGe/Si layers that feature a high degree of relaxation, low density of threading dislocations, and a good surface morphology.
      
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A series of GexSi1-x/Si single quantum well samples with x = 0. 25, 0. 33, 0. 40,0. 45 and 0. 53 are grown by the molecular beam epitaxy with 15 nm well thickness, which is smaller than hc, the critical thickness of psudomophical growth,for metastable samples with x=0. 25,0. 33 and 0. 40,a little larger than hcfor sample with x=0. 53. First,the degrees of strain relaxation of samples are measured by the Raman scattering spectra. When the Ge composition x is larger than0. 45,the strain begins to relax. To detect...

A series of GexSi1-x/Si single quantum well samples with x = 0. 25, 0. 33, 0. 40,0. 45 and 0. 53 are grown by the molecular beam epitaxy with 15 nm well thickness, which is smaller than hc, the critical thickness of psudomophical growth,for metastable samples with x=0. 25,0. 33 and 0. 40,a little larger than hcfor sample with x=0. 53. First,the degrees of strain relaxation of samples are measured by the Raman scattering spectra. When the Ge composition x is larger than0. 45,the strain begins to relax. To detect the interfacial defects in quantum wells, aspecial operating mode in deep level transient spectroscopy (DLTS ) isemployed. For the samples with x = 0. 25, 0. 33 and 0. 40, a majority carrier peakcorresponding to the confined carrier emissions from the quantum well can be seen.The activation energies derived from the peak temperatures agree well with thepredicted valence band offsets at the GexSi1-x/Si interfaces. In addition,a single level defect located in the quantum well or near its interface is found in the sample with x=0. 25,and a series of defects located at the heterointerfaces and distributed in an energy range above the midgap exist in the samples with x=0. 33 and x= 0. 40. For samples with x = 0. 45 and 0. 53, the situations are quite different, the DLTS peak corresponding to the well emission can no longer be seen. The majority carrier peaks in samples with x= 0. 45 and 0. 53 are believcd to be caused by the threading dislocations induced by the partial relaxation of misfit strains. By the electrochemical corrosion, it is found that all' defects of samples are located near the heterointerfaces of the samples.

对于处在亚稳态生长区域内阱宽为15um锗组分x=0.25、0.33、0.40的单量子阱样品,及阱宽相同x=0.45、0.53的单量子阱样品,首先通过喇曼光谱测量了样品的应变弛豫程度,发现当锗组分增加到X≥0.45时,其应变开始逐渐弛豫,然后通过测量深能组瞬态谱(DLTS),研究应变弛豫程度不同的样品中形成的缺陷性质。在X=0.25、0.33、0.40样品中均可以观察到量子阱中载流子发射产生的DLTS峰,由它求得的能带们移值与理论预计值符合。对于X=0.45、0.53样品阱中载流子发射信号已被缺陷信号淹没,表明此时样品的缺陷浓度很大。相应的缺陷情况是:对于应变未弛豫的样品(X=0.25),DLTS测得的缺陷为一点缺陷;对于应变基本未弛豫的样品(X=0.33、0.40)DLTS测得的缺陷主要为一组界面缺陷;而应变部分弛豫的样品(X=0.45、0.53),DLTS测得的缺陷与前三种样品不同,样品的缺陷可能与形成的穿透位错有关。通过电化学腐蚀,可以确定这些缺陷均位于异质界面附近。

Based on the one-dimensional dislocation crack model and the energy calculations, a two-dementional dislocation crack model is presented,which is an elliptical crack caused by the dislocation pile-up groups.The total potential energy of this model is obtained. Following the principle of conservation of energy, the equilibrium length of the crack and the critical stresses for growing cracks are given. All results are compared with Griffith's solutions for Mode-I through crack and the elliptical embedded crack,...

Based on the one-dimensional dislocation crack model and the energy calculations, a two-dementional dislocation crack model is presented,which is an elliptical crack caused by the dislocation pile-up groups.The total potential energy of this model is obtained. Following the principle of conservation of energy, the equilibrium length of the crack and the critical stresses for growing cracks are given. All results are compared with Griffith's solutions for Mode-I through crack and the elliptical embedded crack, which get in macroscopic fracture mechanics.When the number of dislocation tends to zero, the results obtained in this paper are reduced to that of macroscopic fracture mechanics.

在已有的一维穿透位错裂纹模型及能量计算的基础上,将其推广为二维椭圆盘状裂纹模型,并计算了其能量.根据能量平衡原理,给出了位错裂纹模型的裂纹平衡尺寸、裂纹扩展临界应力.并与不考虑位错影响的宏观断裂力学中Ⅰ型穿透裂纹的Grifith解及椭圆盘裂纹的Grifith解加以比较.给出的位错裂纹模型解在位错数目n=0时与宏观断裂力学解一致

The fully relaxed Si\-\{0.83\}Ge\-\{0.17\} epitaxial layer with Ge composition grade buffer layer is grown at 600℃ by our cold\|wall ultrahigh vacuum chemical vapor deposition system (UHV/CVD). The transmission electron microscopy (TEM) image shows that the Si 0.83 Ge 0.17 epitaxial layer is free of dislocations, and the Si cap layer on it is in tensile strain. Additionally, it is found that the temperature can affect the results of the growth greatly. The higher temperature can increase the growth...

The fully relaxed Si\-\{0.83\}Ge\-\{0.17\} epitaxial layer with Ge composition grade buffer layer is grown at 600℃ by our cold\|wall ultrahigh vacuum chemical vapor deposition system (UHV/CVD). The transmission electron microscopy (TEM) image shows that the Si 0.83 Ge 0.17 epitaxial layer is free of dislocations, and the Si cap layer on it is in tensile strain. Additionally, it is found that the temperature can affect the results of the growth greatly. The higher temperature can increase the growth rate and accelerate the relaxation velocity of the Ge composition grade layers. This is of advantage to the growth of thick Ge composition grade layers.

利用自制的冷壁石英腔 UHV/CVD设备 ,60 0℃条件下 ,通过 Ge组分渐变缓冲层技术 ,在 Si( 1 0 0 )衬底上成功地生长出完全弛豫、无穿透位错的 Si0 .83Ge0 .17外延层 ,并在其上获得了具有张应变的 Si盖帽层 .另外 ,还在 550℃下生长了同样结构的样品 ,发现此样品厚度明显变薄 ,组分渐变层的应变释放不完全 ,位错网稀疏而且不均匀 ,其上的 Si0 .83Ge0 .17外延层具有明显的穿透位错

 
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