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   晶格温度 的翻译结果: 查询用时:0.459秒
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晶格温度
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  lattice temperature
     The electron and hole system are described by a Fermi-Dirac distribution with two parameters: the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc>TL.
     这时电子和空穴各自分布在能带底,形成准费米狄拉克分布。 这种热平衡费米分布可以用两个参数来描述,准费米能级μ和载流子温度Tc,开始时载流子温度高于晶格温度Tc>Tl。
短句来源
     Electron gas and lattice temperature profiles in each layer, 100 nm gold film and 34 nm gold film/33 nm Cr film/34 nm gold film, are obtained by numerical inverse.
     通过拉普拉斯数值反变换,计算并绘制了100nm单层Au膜和34nmAu/33nmCr/33nmAu三层膜在飞秒脉冲激光加热过程中各层薄膜内电子温度和晶格温度沿薄膜厚度的分布曲线。
短句来源
     The results show that the electron temperature comes to a head in the channel under the gate,it will achieve 6223 K when the height of the pulse is -18 V. then it falls around gradually towards the lattice temperature(300 K).
     结果表明,在器件的栅下靠近漏端一侧的沟道处电子温度最高,当栅脉冲电压为-18V时可达6223K,并且电子温度从最高点向四周逐渐降低最后与晶格温度(300K)达到一致。
短句来源
     The temporal evolution and spatial distribution of the lattice temperature, carrier concentration
     本文计算了由毫微秒和微微秒激光脉冲照射而在硅晶体中产生的晶格温度、载流子浓度和载流子温度的时间演变和空间分布,本文用PDECOL软件包计算一组关于晶格温度、载流子浓度、载流子温度和激光强度的偏微分方程组的数值解。
短句来源
     Using Laplace transform an analytical expression for the electron gas temperature and lattice temperature is given in transform domain. Also,the effects of the op-erating conditions and metal properties on the thermal losses are studied.
     从双曲两步热传导模型出发,运用Laplace变换给出在考虑对流热损失的情况下,金属薄膜的电子气和固体晶格温度在Laplace变换域内的解析表达式,同时给出各种工作条件和材料参数对薄膜热损失的影响。
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  “晶格温度”译为未确定词的双语例句
     While holding the collector-emitter voltage constant at 3.0 V,the base-emitter voltage reaches maximum value about 0.735 V and then starts to decrease.
     研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。
短句来源
     The line shapes and temperature dependence of the 1LO and 2LO phonon assisted replicas are discussed in terms of the distribution of kinetic energy of the excitons with an effective temperature equal to that of the lattice.
     根据激子的动能分布,讨论了1LO和2LO声子协助的伴线的形状和温度依赖。 这里激子的有效温度等于晶格温度
短句来源
     It is also analysed that the effect of electron-lattice couple coefficient g on surface temperature, and found that g determines the surface temperature rising rate and the electron-lattice couple time.
     计算模型对电子与光子耦合系数的大小对金属表层电子温度的影响进行了分析 ,同时考虑不同脉宽、不同能流及功率密度大小的因素。 发现电子与晶格耦合系数影响材料表面电子的温升及电子与晶格温度耦合时间 ;
短句来源
     Make the two-temperature model, describes interaction of ultrashort laser with solids, formatted simply, simulated the surface temperature of electron and lattice by finite-different method to understand the essence of non-thermal processing. Threshold model and phase explosion, the mechanism of femtosecond laser interact with metal, were investigated and proved by the ablation of single crystal copper in vacuum.
     在飞秒脉宽条件下,化简描述超短脉冲与材料作用的一维双温模型,并利用有限差分方法进行分析,得到材料表层电子与晶格温度随时间变化规律,从温度角度分析飞秒激光非热熔性加工的本质,并探讨飞秒激光与金属材料作用的烧蚀阈值和液相爆破理论,并采用120fs激光在真空中烧蚀单晶铜试验对其进行了验证。
短句来源
     The relaxing process is analyzed with the experimental results, and the influence of the temperature effect of the free carrier and the lattice on the relaxing process is numerically expressed, and quantitive calculating results are also presented.
     根据实验结果,分析了弛豫过程,并通过计算,分析了自由载流子和晶格温度效应对弛预过程的影响,并给出了定量计算结果,分别为-7.33x10~(-4),0.85×10~(-4)。
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  相似匹配句对
     T is temperature, ℃.
     T为温度,℃。
短句来源
     Lattice Theory and Experimental Study of Methane Adsorption above the Critical Temperature
     超临界温度甲烷吸附的晶格理论及实验
短句来源
     Crystal lattice constants,IR spectroscopy and Curie temperatures were tested.
     测试了晶体的晶格常数、红外光谱和居里温度
短句来源
     T-temperature, K;
     T—溶液温度,K;
短句来源
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  lattice temperature
The obtained dependences of the lattice temperature on the radius (distance from the ion path) and depth suggest that the ionization energy loss of a 700-MeV uranium ion in nickel is sufficient to melt the material.
      
The obtained dependences of the lattice temperature on the radius and depth show that the ionization energy loss of a 710-MeV bismuth ion in this two-layer material is sufficient for melting.
      
The threshold conditions for a vibronic laser are shown to be dependent on the strength of the interaction of optical centers with a local vibration, which forms the vibronic spectrum, and the crystal lattice temperature.
      
Such AS‖ are formed at high EHP densities (n ≥ 1 × 1016 cm-3), when the electron-hole scattering is dominant, and at electron temperatures Te = (2-4.5)T0 (T0 is the lattice temperature).
      
An approximate expression is derived for the momentum relaxation time in the quasielastic scattering of hot electrons by acoustic phonons as a function of the electron energy and the lattice temperature.
      
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The exciton emission spectrum of ZnSe MIS diodes in forward bias electroluminescence has been studied down to the lowest temperatures (20-30K) atwhich it is still possible to pass an appreciable current through a device. Withdiodes prepared on crystals of the highest chemical purity grown by conventional vapour phase techniques, the luminescence consisted almost entirely of the 1LO and 2LO phonon assisted replicas of the Γ3→Γ6 free exciton emission.The shapes of the two bands are discussed in terms of the semi-classical...

The exciton emission spectrum of ZnSe MIS diodes in forward bias electroluminescence has been studied down to the lowest temperatures (20-30K) atwhich it is still possible to pass an appreciable current through a device. Withdiodes prepared on crystals of the highest chemical purity grown by conventional vapour phase techniques, the luminescence consisted almost entirely of the 1LO and 2LO phonon assisted replicas of the Γ3→Γ6 free exciton emission.The shapes of the two bands are discussed in terms of the semi-classical theory of Gross et al [6. 7] with the result that the width asymmetry of the bands are attributed to a Maxwell-Boltzmann distribution of the excitons in an exciton band with an effective exciton temperature close to that of the lattice.

研究了最低温度为20~30K时,在正向电压激发下ZnSe MIS二极管的激子发光光谱,在这一温度下,二极管有可能通过足以产生发光的电流。对于利用通常气相技术生长的高纯晶体所制备的二极管,其电致发光几乎完全由Γ_8→Γ_6自由激子发光的1LO和2LO声子伴线所组成。根据Gross等人的半经典理论,讨论了两个谱带的形状。结果是谱带的宽度和不对称性归结为激子服从Maxwell-Boltzmann分布,其有效激子温度接近于晶格温度

The radiative decay of free excitons with the emission of 0, 1 or 2LO phonons has been observed in electroluminescence in CdS diodes operated in forward bias at temperatures in the range 40-77K. The line shapes and temperature dependence of the 1LO and 2LO phonon assisted replicas are discussed in terms of the distribution of kinetic energy of the excitons with an effective temperature equal to that of the lattice.

在44~77K温度范围内。在正向电压激发下的Cds MIS二极管中,观测到了发射0、1或2个纵光学(O、1LO或2LO)声子的自由激子的辐射衰减。根据激子的动能分布,讨论了1LO和2LO声子协助的伴线的形状和温度依赖。这里激子的有效温度等于晶格温度

Recently, much work on near band edge emission under high excitation density has been reported in ZnSe to obtain blue spontaneous and stimulated amission. But most of the researchs are concentrated on photoluminescence (PL). Saito et al. observed E and P bands in ZnSe in PL, which they attributed to exciton-electron (Ex-e) and exciton-exciton (Ex-Ex) interaction, respectively. Baltramiejunas et al. found that the effective exciton temperature used in ZnSe in PL was 79-150K, higher than the lattice temperature...

Recently, much work on near band edge emission under high excitation density has been reported in ZnSe to obtain blue spontaneous and stimulated amission. But most of the researchs are concentrated on photoluminescence (PL). Saito et al. observed E and P bands in ZnSe in PL, which they attributed to exciton-electron (Ex-e) and exciton-exciton (Ex-Ex) interaction, respectively. Baltramiejunas et al. found that the effective exciton temperature used in ZnSe in PL was 79-150K, higher than the lattice temperature used (77K). Catalano et al. and Colak et al. reported the stimulated emission in ZnSe excited by photon and electron beam respectively. In our earlier work attention was focused on the identification of free exciton emission in forward-biased ZnSe MIS diodes under low excitation density , and proved that the effective exciton temperature was close to the lattice temperature. As far as we are aware that there is no reports on free exciton emission in forward-biased ZnSe MIS diodes with high pulse current density.This paper describes the free exciton emission in ZnSe MIS diodes with high pulse current density. With increasing the pulse current density, a new emission band P was found at the low energy side oi the intrinsic exciton emission band. The origin of the new P band in EL was investigated.ZnSe crystal used in this study were grown by sublimation. Dice with dimension of 3×3×lmm3 were cut from the crystalline boules and heated in molten zinc to reduce their resistivities. The MIS structure was performed by making an ohmic contact on one large area surface and evaporating an insulating layer and gold electrode on opposite surface. The ZnSe MIS diodes were excited by pulse current in forward bias with the pulse width of 0.2ms, repetition frequency of 160Hz and current density from 50 to 500mA/mm2. EL spectra were measured using a grating monochromater of Model Spex 1404 with a RCA-C31034 cooled photomultiplier.Fig.1 shows the EL spectra at 77K of ZnSe MIS diodes excited by pulse current with density from 50 to 500mA/mm2 in iorward bias. The bands in Fig.l have been labeled according to the nomenclature adopted by Fan and, Woods. Thus when the current density was 50mA/mm2 in Fig.1 the bands labeled Ex and Ex-2LO were located at 4431A (2.7981eV) and 4537 A (2.7328eV)5 lespeclively. The energy separation between two bands is close to twice 31.9meV, which corresponds to the energy of LO phonon in ZnSe . The band at 4462A (2.7787eV) labeled E, is due to free exciton emission following scattering from free electron in conduction band and the band at 4585A (2.7041eV) labeled FB is associated with free to bound emission. With increasing the pulse cuirent density following results were obtained.First, a new emission band P which does not exist under ordinary excitation is produced in the low energy side of Es band, and the dependence of intensity of P band Jp on intensity of excitation laser J can be expressed as the nonlinear relation. Second, Es band becomes broad, especially at the low energy side and the peak position of Es band shilts to the low energy side. This fact is shown more clearly in Fig. 2 in which the abscissa is enlarged.One of the most interesting aspects of the work described here is concerned with the nature of the new P band in EL in ZnSe MIS diodes. Saito et al. attributed the P band, which they observed in PL, to Ex-Ex interaction. Comparing the new P band in EL obtained here with the P band in PL obtained by Saito et al.,it is reasonable to think that the new P band in EL is the same as that of the P band in PL, So it can also be ascribed to the inelastic collision of two free excitons.In PL it is concluded that the P band is produced by Ex-Ex interaction under high excitation and the effective temperature of free exciton is higher than the lattice temperature. On the bads of the results of PL, we consider that in EL when the new P band appears under high excitation, the effective temperature of free exciton should be higher than the lattice temperature. Fig.3 , 4 show comparison of the shape of t

本文测量了在77K和正向脉冲电流密度为50~500mA/mm~2的激发下,ZnSe MIS二极管的电致发光光谱。首次在高电流密度激发下的ZnSe晶体的电致发光光谱上,观测到自由激子与自由激子间(E_x-E_x)的散射。本中根据自由激子的动能分布,讨论了2LO声子协助的自由激子伴线的形状,发现当激发电流密度增高时,自由激子的有效温度大于晶格温度,这可归结为激子与激子间的非弹性散射。

 
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