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电子转移
相关语句
  transferred electron
    Transferred Electron Effect Between Different Energy Valleys in Semiconductor Heterostructure
    半导体异质结构中的谷间电子转移效应(英文)
短句来源
    TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTURE
    半导体异质结构中的谷间电子转移效应
短句来源
    The transferred electron effect between different valleys in AlGaAs/GaAs/AlGaAs heterost-ructure is studied using the one band two valleys model in this paper.
    本文使用单带双谷理论研究了GaAs/AlGaAs异质结构中的谷间电子转移效应。
短句来源
    The dependence of transferred electron effect on the heterojunction interface, the band structures of the well and barrier materials, and the electric field is discussed.
    讨论了异质结界面、势阱和势垒材料的能带结构以及外加电压对谷间电子转移效应的影响。
短句来源
    Furthermore, the difference between this transferred electron effect and the well known Gunn effect is pointed out and its application in the developing 9f semiconductor devices is discussed.
    在此基础上进一步分析了这一谷间电子转移效应与熟知的Gunn效应间的区别,并讨论了它在半导体器件设计中的应用。
短句来源
  “电子转移”译为未确定词的双语例句
    It has been found that the valence electrons of Ni transfer partially to the Cu when the Cu (or Ni) is deposited onto Ni(or Cu) at very early stage of the deposition.
    结果表明当Cu(Ni)淀积到衬底Ni(Cu)的初期阶段,Ni的部分价带电子转移到Cu中。
短句来源
    Adsorption energies of a Au atom on different sites are calculated. The layer projected density of states for Au atoms covered Si(001) surface arestudied and compared with that of the clean surface.
    计算并分析Au原子在不同位置的吸附能,吸附体系与清洁的Si(001)表面的层投影态密度,以及电子转移情况。
短句来源
    Energies of adsorption systems of aFe atom on different sites are calculated, and the layer project density of states(LPDOS), the charge transfer are investigated.
    通过对Fe原子在不同位置的吸附能,吸附体系与清洁表面的层投影态密度以及电子转移情况进行计算。
短句来源
    This paper reports the preparation of the tin dioxide films deposited at 170℃ by meansof the plasma enhanced chemical vapor deposition (PECVD) and measure ments of infraredspectrum and surface photovoltaic spectrum. The experimental results show that two species ofO_2~(2-) and O~- are chemisorpted on the surface of the SnO_2 films as sensing activators of the re-action and medium of the charge transfer.
    本文采用PECVD方法制备了SnO_2薄膜,对薄膜进行了红外光谱和表面光电压谱测量发现,薄膜表面化学吸附O_2~(2-)和O~-离子基团,成为反应活性中心、电子转移的桥梁,推测了SnO_2表面与乙醇气体敏感反应历程.
短句来源
    It has been found that the Si bonds predominantly to As instead of Ga. Some p electrons are transferred from Si to the valance band of As, and a new interface state has emerged at 2eV ahove the top of the valance hand of GaAs.
    利用谱峰修正技术,研究了Ga、As、Si价带跃迁几率在界面不同深度内的变化情况,发现在界面处As-Si有明显的成键作用,Si原子的一部分p电子转移到了As原子空的p轨道中,由此产生了一个新的界面态,该界面态位于GaAs价带顶上方2eV的地方。
短句来源
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  transferred electron
Consideration of the charge transfer between the complex and the outer-sphere water molecules has no significant effect on the calculated electronic spectrum; the transferred electron density is below 1e.
      
This value (6 cm-1 for one transferred electron) is identical to the downshift of the Ag(2) mode in alkali metal fullerides with ionic bonding.
      
The transferred electron does not localize on the proton, but tunnels directly from the substrate to the ferric active site in a concerted proton tunneling-electron tunneling (PTET) process.
      
The197Au M?ssbauer spectrum obtained from Au(5 ?)/Fe(8 ?) is entirely magnetic at 16 K, suggesting the existence of a magnetic hyperfine interaction at197Au nuclei through the transferred electron spin polarization.
      
Theoretical and experimental investigations of millimeterwave GaAs second harmonic transferred electron device (TED) oscillators using separate circuits for frequency and power optimization, are described.
      
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This paper reports the preparation of the tin dioxide films deposited at 170℃ by meansof the plasma enhanced chemical vapor deposition (PECVD) and measure ments of infraredspectrum and surface photovoltaic spectrum.The experimental results show that two species ofO_2~(2-) and O~- are chemisorpted on the surface of the SnO_2 films as sensing activators of the re-action and medium of the charge transfer.The sensing mechanism of the SnO_2 films to thealcohol (C_2H_5-OH) is given.For a SnO_2 film deposited on an...

This paper reports the preparation of the tin dioxide films deposited at 170℃ by meansof the plasma enhanced chemical vapor deposition (PECVD) and measure ments of infraredspectrum and surface photovoltaic spectrum.The experimental results show that two species ofO_2~(2-) and O~- are chemisorpted on the surface of the SnO_2 films as sensing activators of the re-action and medium of the charge transfer.The sensing mechanism of the SnO_2 films to thealcohol (C_2H_5-OH) is given.For a SnO_2 film deposited on an n-Si wafer, the surface photo-voltaic relative intensity increases over two orders of magnitude. We attribute the effect tothe action of the heterojunction and antireflection.

本文采用PECVD方法制备了SnO_2薄膜,对薄膜进行了红外光谱和表面光电压谱测量发现,薄膜表面化学吸附O_2~(2-)和O~-离子基团,成为反应活性中心、电子转移的桥梁,推测了SnO_2表面与乙醇气体敏感反应历程.SnO_(?)薄膜淀积在n-Si上,使其表面光电压信号增强二个数量级以上,我们认为是SnO_2/n-Si异质结作用和消反射作用的结果.

The transferred electron effect between different valleys in AlGaAs/GaAs/AlGaAs heterost-ructure is studied using the one band two valleys model in this paper. Taking the contributions from various electric field and the band offset and current are derived. The tunnelling probabilities and currents for various hetorostructures, alloy components and electric fields have been calculated. The dependence of transferred electron effect on the heterojunction interface, the band structures of the well and barrier materials,...

The transferred electron effect between different valleys in AlGaAs/GaAs/AlGaAs heterost-ructure is studied using the one band two valleys model in this paper. Taking the contributions from various electric field and the band offset and current are derived. The tunnelling probabilities and currents for various hetorostructures, alloy components and electric fields have been calculated. The dependence of transferred electron effect on the heterojunction interface, the band structures of the well and barrier materials, and the electric field is discussed. The computed tunnelling current agrees with the experimental results, and so the effectiveness of this model in the research of many valleys system is demonstrated. Furthermore, the difference between this transferred electron effect and the well known Gunn effect is pointed out and its application in the developing 9f semiconductor devices is discussed.

本文使用单带双谷理论研究了GaAs/AlGaAs异质结构中的谷间电子转移效应。计入每一异质结界面上的能带交错,谷间耦合和电场的贡献,导出了计算异质结构隧穿概率和隧道电流的公式。以GaAs/AlGaAs异质结构为例,算出不同结构、不同合金组分比及不同电压下的隧穿概率和隧道电流。讨论了异质结界面、势阱和势垒材料的能带结构以及外加电压对谷间电子转移效应的影响。算得的隧道电流同实验结果相符合,证实了这一理论在研究多能谷系统中的适用性。在此基础上进一步分析了这一谷间电子转移效应与熟知的Gunn效应间的区别,并讨论了它在半导体器件设计中的应用。

The mechanism of forming negative ions in Cesium sputter negative ion sources is studied by means of a modified dipole layer model and quantum theory.Formulas of the change of work function on the metal surface adsorbing Cesium layer and the electron transfer probability are given.The forming probability of the negative ions are derived using a quantum tunnel mode.The negative ion yield and extracted beam current intensity are calculated.The calculation re-sults are in good agreement with the experimental data.The...

The mechanism of forming negative ions in Cesium sputter negative ion sources is studied by means of a modified dipole layer model and quantum theory.Formulas of the change of work function on the metal surface adsorbing Cesium layer and the electron transfer probability are given.The forming probability of the negative ions are derived using a quantum tunnel mode.The negative ion yield and extracted beam current intensity are calculated.The calculation re-sults are in good agreement with the experimental data.The calculation is simple.

本文采用改进的偶极层模型和量子理论,研究了铯溅射负离子源中负离子形成机理,给出了吸附铯原子层的金属表面功函数变化及电子转移几率公式,并用量子隧道模型导出负离子形成几率,计算了负离子产额和引出束流强.其结果与实验值基本相符.与测量值相比,比 Alton 的计算结果要好,且计算过程简单.它为溅射型负离子源机理研究提供了一种理论模式.

 
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