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器件建模
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  device modeling
     Microwave Device Modeling Based on the Fuzzy Neural Network
     基于模糊神经网络的微波器件建模
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     Deep sub-micron CMOS device modeling and BSIM models
     深亚微米CMOS器件建模与BSIM模型
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     Ultra Deep Submicron Device Modeling and the Model Parameter Extraction Based upon the BSIM 3
     基于BSIM3的超深亚微米器件建模及模型参数提取
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     The developing trand of above 40 Gb/s ICs design technology was discussed, including high-speed device modeling and the ICs testing.
     还介绍了10Gb/s的收发器套片产品化问题,如封装问题等,讨论了40Gb/s以上速率芯片技术的发展趋势,包括高速器件建模和测试问题等。
短句来源
     The main target of this work is to design and realize the high-speed GaAs 3bit phase digitizing ADC and DAC for 3bit phase DRFM, including many research fields such as the GaAs process flow, device modeling, circuit design, characterization and test of circuits, etc.
     本文以用于3bit相位体制DRFM系统的超高速ADC、DAC单片集成电路为总体目标,基于信息产业部南京55所0.5um全离子注入MESFET工艺开展了适合于大规模集成的工艺流程、器件建模、电路设计、测试表征等各方面的研究工作。
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  “器件建模”译为未确定词的双语例句
     Modeling and Optimization System for Semiconductor Devices
     半导体器件建模与优化系统
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     But to exert the Halo structural advantages and potential sufficiently, there is much work to be done no only on modeling of Halo MOSFET but numerical simulation.
     但要充分发挥Halo结构的优势和潜力,无论在器件建模和数值模拟上都有很多工作要做。
短句来源
     CMOS Rf Devices Modeling and Low Noise Amplifiers Design
     CMOS射频器件建模及低噪声放大器的设计研究
短句来源
     In order to reduce design time,the modeling and optimization system for semiconductor devices (MOSSED) is studied and implemented.
     为节约设计时间 ,对半导体器件建模与优化系统 (MOSSED)进行了研究与实现 .
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     MODELING AND SIMULATION OF MEMS DEVICES
     MEMS器件建模与仿真分析方法研究
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  相似匹配句对
     High Frequency Device Modelling Software
     高频器件建模软件
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     Deep sub-micron pHEMT device modeling
     深亚微米pHEMT器件建模
短句来源
     THE MODELING OF FLEXIBLE MANUFACTURE SYSTEM
     柔性制造系统的建模
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     Protection Devices
     保护器件
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     The Research of Modeling Method Based on VHDL-AMS
     建模方法
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  device modeling
Spatial navigation and causal analysis in a brain-based device modeling cortical-hippocampal interactions
      
The diffusion length is nearly independent of temperature, which is interesting for device modeling.
      
We prove asymptotic stability results for nonlinear bipolar drift-diffusion-Poisson Systems arising in semiconductor device modeling and plasma physics in one space dimension.
      
Most of the groups are deal with the nanomaterial technology and only few of them have activities in nanostructure science and engineering, in new concepts and device modeling and technology.
      
Given are an example of device modeling, system-level modeling, and the temperature decay of a biomedical sensor chip.
      
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The modeling method for the elements with characteristic family, which is presented by L. O. Chua (1977), is modified, then the one dimensional fluctuating canonical picecwise-linear model is obtained. It is an efficient model. The algorithm for canonical piecewise-linear dynamic networks with one dimensional fluctuating model is discussed in detail.

本文改进了L.O.Chua(1977)提出的具有特性曲线族器件的建模方法,得出浮动一维规范化分段线性化模型,它是个较好的模型。文中还详细论述了含有这种器件的规范化分段线性化动态网络的算法。

The finite difference bine-domain method is extended to analyze an active antenna. The Procedures which are necessary to produce a stable algorithm are described. Because the large signal characteristic ofactive devices is introduced into the algorithm, it can calculate the transient electromagnetic field effectively.Some results are given and a comparison is made with the data obtained from piecewise harmonic balancemethod and the measurement.

本文采用时域有限差分法(FDTI))分析了有源天线,讨论了采用时域有限差分法对有源器件的建模问题.在本方法中由于有源器件的大信号模型被直接引入到时域场分析中,从而能得到十分有效的全波瞬态分析.计算结果和谐波平衡法计算结果及实验结果比较,验证了该方法的可行性.

A novel modeling way for nonlinear devices based on the MicroSim Corporatrion's general electronic andcircuital simulation software-Pspice is proposed for and implemented on the nonlinear capacitance. This model is ageneral subcircuit model and can be used in any circuit simulating and for modeling of power devices. As the modeladoptS the curve-fitting way for the nonlinear function, it is eaSy to realize the simulation of nonlinear devices inPspice using the controlled-source, which simulates the curve-fitting...

A novel modeling way for nonlinear devices based on the MicroSim Corporatrion's general electronic andcircuital simulation software-Pspice is proposed for and implemented on the nonlinear capacitance. This model is ageneral subcircuit model and can be used in any circuit simulating and for modeling of power devices. As the modeladoptS the curve-fitting way for the nonlinear function, it is eaSy to realize the simulation of nonlinear devices inPspice using the controlled-source, which simulates the curve-fitting polynomial function. The veracity and practicability of modeling way is proved by the result of comparing IR Corporation's IGBT gate-drain capacitancecharacteristic with the simulating curve. In actual application, the power device IGBT is simulated successfully through the simulating way of these nonlinear componentS. The ideal can be used to model the nonlinear component in others simulation software as well.

提出了一种基于MicroSim公司的通用电子电路仿真软件Pspice上的新颖的非线性器件的仿真方法,并以非线性电容为例具体加以实现该模型是一个通用子电路模型,并且可以应用于任何电路仿真及电力半导体器件建模中由于在该模型的建立中采取了非线性函数的曲线拟合方法,使得原先在Pspice中无法实现的非线性器件可以通过易于实现的受控源来模拟拟合多项式函数.本文以见公司的功率电子器件IGBT手册所给出的栅漏电容特性与仿真结果加以对比,证明了本方法的准确性及实用性.在实际应用中,该模型结合其它的非线性器件模型成功地构造了功率电子器件IGBT.同时,该思想也可以应用于大部分仿真软件中的非线性元件建模中.

 
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