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激活温度
相关语句
  activation temperature
    Effects of Activation Temperature on Diamond Growth in C-H,C-O and C-H-O Systems under Low Temperature
    激活温度对C-H、C-O和C-H-O体系低压金刚石生长条件的影响
短句来源
    In this paper, according to our non-equilibrium thermodynamic coupling model, the phase diagrams for diamond growth in C-H,C-O and C-H-O system are calculated under different activation temperatures. Based on these phase diagrams, the effects os activation temperature and substrate temperature on diamond growth region were studied. These results can direct the selection of activation temperature and substrate temperature during diamond growth in the vapor phase under low pressure.
    本研究采用非平衡热力学耦合模型计算了C-H、C-O和C-H-O体系不同激活温度下的金刚石生长相图,研究了激活温度和衬底温度对金刚石生长区的影响规律.本研究结果将对金刚石气相生长实验中激活温度和衬底温度的合理选取具有指导意义。
短句来源
    The experimental results indicate that the pumping properties of these new Ti-based getters activated at low temperature are better than the Zr-C getter. The gettering will be improved with increasing the activation temperature.
    结果表明,这种新型的钛基吸气剂在低温激活时的室温吸氢性能优于高温激活的传统Zr-C吸气剂,随着激活温度的升高,新型吸气剂的性能更好。
短句来源
  “激活温度”译为未确定词的双语例句
    The melting point of Si1-xGex is lower than that of Si, and its temperatures of deposition, crystallization and dopant activation are also lower than that of Si, so Si1-xGex is more suitable for the low temperature process.
    Si_(1-x)Ge_x的熔点比Si低,淀积、结晶和杂质激活温度也比Si低,比较适宜低温工艺。
短句来源
    However,the BeO film activated at 640℃ was quite different from that activated at 870℃. The former was thin and uniform,with fine and uniform grains around 150(?) in size,while the latter was thick and uneven with more fissures and its grains were uneven and coarse with the size from 200(?)
    但640℃与870℃激活生成的BeO薄膜有很大差异:前者BeO晶粒细小,基本在150埃左右,膜薄且均匀,后者晶粒粗大不等,大的可达1000埃,小的仅有200埃,少的仅有200埃,膜厚亦不均匀,裂纹也增多了,这说明激活温度对BeO薄膜的生长有显著影响。
短句来源
    After rare earth doped molybdenum is actived at high temperature(≥1400*!℃),the maximum secondary emission coefficient can be high to more than 3.0.The higher the content of rear earth,the higher the secondary emission coefficient.
    经过高温激活处理 (激活温度≥ 14 0 0℃ )的稀土 钼烧结体 ,最大次级发射系数δmax大于 3 0。 随着稀土添加量的增加 ,材料的次级发射系数增大。
短句来源
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  activation temperature
The induction period is followed by a rapid stage of the reaction, during which hydrogen reacts with NO1 × 1 molecules adsorbed on 1 × 1 areas, irrespective of the activation temperature.
      
The activation has a larger effect on δ when the activation temperature is higher than 1100 °C.
      
Sol-gel catalyst properties depended significantly upon the preparation method used and on the activation temperature.
      
The extreme changes in the plots of the specific surface and adsorption activity with respect to methylene blue (MB) and iodine with maxima at 800°C are observed with an increase in the activation temperature from 400 to 900°C.
      
Both the mutual mass (D) and the thermal diffusion (DT) coefficient contain a thermally activated factor with an activation temperature of 1415 K.
      
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An investigation of the microscopic structure of the surface iilms of Cu-Be dynodes pcelcd off using a special chemical method was carried out by TEM.This methcd is more advantageous in giving a straight forward direct-viewing and avoiding a great deal of indirect analysis.Results showed that the BeO film was continuous,and the BeO grains were fine, dense and grainy in shape.However,the BeO film activated at 640℃ was quite different from that activated at 870℃.The former was thin and uniform,with fine and uniform...

An investigation of the microscopic structure of the surface iilms of Cu-Be dynodes pcelcd off using a special chemical method was carried out by TEM.This methcd is more advantageous in giving a straight forward direct-viewing and avoiding a great deal of indirect analysis.Results showed that the BeO film was continuous,and the BeO grains were fine, dense and grainy in shape.However,the BeO film activated at 640℃ was quite different from that activated at 870℃.The former was thin and uniform,with fine and uniform grains around 150(?) in size,while the latter was thick and uneven with more fissures and its grains were uneven and coarse with the size from 200(?) up to 1000(?),indicating that the activation temperature had a considerable influence on the growth of the BeO thin film. The SAED and AES analysis results showed that there was small mount of Cu_2O and CuO in the peeled film,but not on the outermost surface. By measuring the secondary-electron yield combined with the diffraction analysis,it can be concluded that the BeO film played the major role in the secondary electron cmissiol of the dynode.

采用一种特殊的化学剥离方法,把Cu-Be打拿极的表面薄膜剥离下来,用透射电镜直接观察到了BeO薄膜的微观结构,既直观、真实,又避免了大量的间接分析。观察结果表明,BeO薄膜是连续的,BeO晶粒细小、致密,呈颗粒状。但640℃与870℃激活生成的BeO薄膜有很大差异:前者BeO晶粒细小,基本在150埃左右,膜薄且均匀,后者晶粒粗大不等,大的可达1000埃,小的仅有200埃,少的仅有200埃,膜厚亦不均匀,裂纹也增多了,这说明激活温度对BeO薄膜的生长有显著影响。选区电子衍射与俄歇电子谱的分析表明,在剥离下来的表面薄膜中,确有少量的Cu_2O和CuO存在,但不是分布在最表面。通过反射电子衍射和二次电子发射系数的测量,直接证明了BeO薄膜是Cu-Be打拿极的主要二次电子发射体。

Activation temperature and substrate temperature are two key parameters for diamond growth in the vapor phase under low pressure. Activation temperature determines the concentrations of activation particles such as super-equilibrium atomic hydrogen (SAH) and super-equilibrium atomic oxygen (SAO) etc. in reaction syStems, and substrate temperature also plays an very important role in reaction processes concerning with the success or failure of diamond growth. Theoretical calculations may predict the effect...

Activation temperature and substrate temperature are two key parameters for diamond growth in the vapor phase under low pressure. Activation temperature determines the concentrations of activation particles such as super-equilibrium atomic hydrogen (SAH) and super-equilibrium atomic oxygen (SAO) etc. in reaction syStems, and substrate temperature also plays an very important role in reaction processes concerning with the success or failure of diamond growth. Theoretical calculations may predict the effect of temperature on diamond growth conditions. In this paper, according to our non-equilibrium thermodynamic coupling model, the phase diagrams for diamond growth in C-H,C-O and C-H-O system are calculated under different activation temperatures. Based on these phase diagrams, the effects os activation temperature and substrate temperature on diamond growth region were studied. These results can direct the selection of activation temperature and substrate temperature during diamond growth in the vapor phase under low pressure.

激活温度和衬底温度是低压人造金刚石制备过程中的两个重要的温度参数,激活温度决定着制备过程中一些重要激活粒子如超平衡氢原子和超平衡氧原子等的浓度,而衬底温度对能否成功地生长金刚石也有重要作用。采用合理的理论计算可以预测温度对金刚石生长条件的影响。本研究采用非平衡热力学耦合模型计算了C-H、C-O和C-H-O体系不同激活温度下的金刚石生长相图,研究了激活温度和衬底温度对金刚石生长区的影响规律.本研究结果将对金刚石气相生长实验中激活温度和衬底温度的合理选取具有指导意义。

A novel temperature difference technique,which considerably reduces alkali vapor contamination,has been successfully deve- loped in fabricating the multi alkali cathodes of the 20/30 invert image intensifier tube.In cathode fabrication,a temperature controllable oven is introduced to raise the temperature of the bottom part of the tube,which contains the screen and the microchannel plate (MCP),100 ℃ higher than the front part.The MCP sample was studied with X-ray photoelectron spectroscopy (XPS).XPS results...

A novel temperature difference technique,which considerably reduces alkali vapor contamination,has been successfully deve- loped in fabricating the multi alkali cathodes of the 20/30 invert image intensifier tube.In cathode fabrication,a temperature controllable oven is introduced to raise the temperature of the bottom part of the tube,which contains the screen and the microchannel plate (MCP),100 ℃ higher than the front part.The MCP sample was studied with X-ray photoelectron spectroscopy (XPS).XPS results show that the alkali vapor contamination has been significantly reduced,The concentrations of Na,K,and Cs are 3.07%,2.23% and 0.00%,respectively,whereas for the control sample,fabricated in conventional technique,the concentrations of Na,K,and Cs are 6.32%,2.70% and 0.36%,respectively.

所谓温差法就是在制备 2 0 / 30倒像管多碱阴极过程中 ,将像管后半部分套一可控温小电炉 ,使荧光屏和微通道板(MCP)等部位的温度始终比阴极基底高 10 0℃左右 ;阴极制备结束后 ,取下管内的MCP进行XPS分析 ,同时还与用标准工艺制备阴极后取下的MCP进行对比分析。XPS谱图表明 ,前者检测到的Na为 3 0 7% ,K为 2 2 3% ,Cs为 0 0 0 % ;后者检测到的Na为 6 32 % ,K为 2 70 % ,Cs为 0 36 %。实验说明 ,在制备阴极过程中 ,阳极筒和荧光屏端温度高于阴极面激活温度 ,使得吸附在MCP电极表面以及阳极筒等高温部件的碱金属 ,尤其是Na的含量降低。从而说明温差法是降低碱金属蒸气对像管内其它部件的污染 ,改善背景噪声的有效方法之一。

 
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