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mos控制
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  mos-controlled
     The Design of MOS-controlled Thyristor
     MOS控制晶闸管(MCT)的设计
短句来源
     The Investigation of Triple Diffusion Process for MOS-Controlled Thyristor
     MOS控制晶闸管的三重扩散工艺研究
短句来源
     Simulation Design of Power Integrated Light-Activated MOS-Controlled Multiway Switch
     功率集成光激MOS控制交流多路开关模拟设计
短句来源
     The fundamental structures and working principles of the new -t ype power device MCT (MOS-controlled Thyristor) were introduced, and the physic al state model in turn-off status modeled mathematically by the state-average method was discussed.
     介绍了新型功率器件MCT(MOS控制晶闸管 )的基本结构和工作原理 . 探讨了MCT在关断情况下的物理状态模型 ,并对MCT的物理状态模型采用状态平均法建立其关断时的数学模型 .
短句来源
  mos controlled
     A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.
     报道了一种新结构的功率栅控晶闸管 ,称其为槽栅 MOS控制的晶闸管 (TMCT) .
短句来源
     This paper deals with a new MCT (MOS controlled thyristor) power device including the parameter and process design and the experimental results. Based on the computer process simulation, the MCT samples were fabricated by using SDB(silicon direct bonding).
     本文探讨了新型功率器件MCT(MOS控制晶闸管)的电参数设计和工艺设计,通过计算机模拟,采用SDB(硅片直接键合)材料,在实验室制成了NMCT样品。
短句来源
     Maximum controllable current of the MOS controlled thyristor
     MOS控制晶闸管的最大可关断电流
短句来源
     Trench MOS Controlled Thyristor
     槽栅MOS控制的晶闸管(英文)
短句来源
     A new power integrated light activated MOS controlled multiway switch is described,which consists of bi directional thyristors,MOS and photoelectric devices.
     介绍了一种新型功率集成光激 MOS控制多路开关 ,它由双向晶闸管、MOS器件、光电器件组成。
短句来源
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  “mos控制”译为未确定词的双语例句
     Characteristics,Drive and Applications of MCT
     MOS控制晶闸管(MCT)的特性、驱动及应用
短句来源
     The paper summarized the new applications of the silicon direct bonding(SDB)technique in the new power electronic devices, such as Insulated Gate Bipolar Transistor(IGBT), Static Induction Thyristor (SITH), MOS Turn-Off Thyristor (MTO), etc.
     综述了硅直接键合(SDB)技术在绝缘栅双极晶体管(IGBT)、静电感应晶闸管(SITH)及MOS控制可关断晶闸管(MTO)等器件中的新应用,说明了SDB技术在新型电力电子器件应用中的新方法和新思路。
短句来源
     A new MOS gate controlled power device ——MBSIT is described. Its fabrication process is similar to that of a n - channel power MOSFET and employs an n - epitaxial layer grown on an n + substrate.
     介绍了一种新型MOS控制功率器件———MBSIT,它的制造工艺类似于一个功率MOS的制造工艺,其材料是在n+衬底上生长n-外延层。
短句来源
     A new type of device structure of MOS controlling thyristor known as DNMCT is presented in this paper.
     提出一种新型的MOS控制晶闸管结构DNMCT器件。
短句来源
     The comparisons of the analytical expression with simulation results are made, which shows that they are in good agreement.
     另外 ,基于MOS控制晶闸管的仿真模型 ,模拟分析了最大可关断电流与它们间的关系 . 解析与模拟分析结果符合较好 .
短句来源
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  mos-controlled
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
      
A type of MOS-controlled thyristor is designed, produced, and studied experimentally.
      
Trench-Gate MOS-Controlled Thyristor: An Evaluation
      
The trench-gate technology for MOS-controlled thyristors is evaluated.
      
Switching characteristics of electron-irradiated MOS-controlled thyristors
      
更多          


This paper deuls with a new MCT (MOS controlled thyristor) power device including the parameter and process design and the fabrication process. Based on the computer process simulation, the MCT samples were fabricated by using SDB (silicon dircct bonding), polysilicon gate sclfaliignment process and multi-lager diclcetrics insulation. Measurement resuits show that the anode cument of 42A/ cm2 can be cutoff in 5μs at the gate bias of-12V.

本文探讨了新型功率器件MCT(MOS控制晶闸管)的结构设计、工艺设计及实施方法。通过计算机工艺模拟,采用SDB(硅片直接键合)、硅栅自对准工艺和多层介质隔离等技术,在实验室制成了MCT样品.测试结果表明.在-12伏的栅偏压下能在5μs内关断42A/cm~2的阳极电流.

This paper deals with a new MCT (MOS controlled thyristor) power device including the parameter and process design and the experimental results. Based on the computer process simulation, the MCT samples were fabricated by using SDB(silicon direct bonding).Measurement results show that the anode current of 42A/cm2 can be cutoff in 5μs at the gate bias of -12V.

本文探讨了新型功率器件MCT(MOS控制晶闸管)的电参数设计和工艺设计,通过计算机模拟,采用SDB(硅片直接键合)材料,在实验室制成了NMCT样品。测试结果表明,在-12V的栅偏压下能在5μs内关断42A/cm2的阳极电流。

A new MOS gate controlled power device ——MBSIT is described.Its fabrication process is similar to that of a n - channel power MOSFET and employs an n - epitaxial layer grown on an n + substrate.In operation,this device is easily designed as normally off device,where the current is completely pinched off by the junction built in voltage resulting in an appearance of potential barrier in the channel of BSIT.An application of forward gate bias voltage allows the anode current to flow.MBSIT is characterized...

A new MOS gate controlled power device ——MBSIT is described.Its fabrication process is similar to that of a n - channel power MOSFET and employs an n - epitaxial layer grown on an n + substrate.In operation,this device is easily designed as normally off device,where the current is completely pinched off by the junction built in voltage resulting in an appearance of potential barrier in the channel of BSIT.An application of forward gate bias voltage allows the anode current to flow.MBSIT is characterized by low impedance,high speed and high current density,so that MBSIT is a promising high current,high speed and high efficiency switching device.

介绍了一种新型MOS控制功率器件———MBSIT,它的制造工艺类似于一个功率MOS的制造工艺,其材料是在n+衬底上生长n-外延层。该器件被设计为常开器件,它的阳极电流通路完全被BSIT沟道中的自建电场所夹断,当外加一个正向栅压时,器件可通过阳极电流。该器件具有低的导通电阻、高速和大的导通电流密度,是一种很有发展前途的大电流、高速度、高效率开关器件。

 
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