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高压输出
相关语句
  high voltage output
     Voltage integrated regulator LM317 and high voltage output circuit
     电压可调集成稳压器LM317及其高压输出电路
短句来源
     Due to some key technologies of many advanced desigh ideas, design circuits, controlling high voltage output etc applied to the source, it reached 10~15kV, output oldtage,stability 2× 10 ̄(-5) in 24h, accuracy better than 1× 10 ̄(-4) .
     其准确度,稳定度指标都很低,一般不能用它对仪器仪表进行检定。 本文所介绍的标准高压源,由于应用了许多先进的设计思想、设计线路以及诸如通过光纤直接传递模拟信号控制高压输出等关键技术,使其最终达到了输出电压10~105kV,24h稳定度2×10 ̄(-5),准确度优于1×10 ̄(-4)。
短句来源
     The analog part mainly includes power source, power control, signal generation, signal modulation, high voltage output control and feedback control circuit.
     模拟部分主要包括电源、功率控制、信号产生、信号调制、高压输出控制和反馈控制电路。
短句来源
     LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC).
     RESURF(减小表面电场)结构的LDMOSFET(水平沟道二次扩散MOS场效应晶体管)是HVIC(高压集成电路)中较为理想的高压输出器件。
短句来源
     Test results show that the circuit is capable of driving 16-channel high voltage output circuit simultanously and its maxium frequency reaches 60 MHz.
     对样片进行了测试,结果表明,电路功能达到设计要求,可同时驱动16路高压输出电路,最高工作频率达到60 MHz。
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  “高压输出”译为未确定词的双语例句
     The output range of positive high-voltage is from zero to +50kV, which is from zero to -25kV for the negative high-voltage.
     电源的正负高压输出值分别为:正高压0~+50kV、负高压0~-25kV。
短句来源
     This kind of converters is constituted of inverter, high frequency transformer and output cycloconverter.
     这类变换器由逆变器、高频变压器、输出周波变换器、以及输出滤波器构成,适用于高压输出变换场合。
短句来源
     The 6KV transducer with the series-wound unit of the PWM pressure type can realize the output of the direct high pressure by collecting a lot of lower frequency conversion pressure.
     单元串联多电平PWM电压源型6kV变频器采用若干个低压PWM变频功率单元串联的方式实现直接高压输出
短句来源
     The applied software and hardware of high voltage power supply that ranged from 0 to 8000V have been finished.
     开发了用于微流体驱动的高压电源,高压输出0-8000V,电压的最小分辨率为1.95V,实际输出电压波动3-5V。
短句来源
     SCM controls CPLD by the input/output port through the procedure so as to produce the profile signal for power module. Then the high pressure shielding system controls the power module so as to drive the output transformer for the high frequency high-pressure output of high frequency electricity knife.
     单片机通过程序由输入输出端口对CPLD进行控制,使之产生控制功率模块所需要的波形信号,通过高压隔离系统控制功率模块,驱动输出变压器,产生高频电刀的高频高压输出
短句来源
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  相似匹配句对
     Study of the Filter at the Motor Terminals in a High Voltage Inverter Drive System
     高压变频器输出滤波器研究
短句来源
     Experimental Investigation for Minimizing the High Voltage Output Transformers in Display
     显示器高压输出变压器小型化试验研究
短句来源
     output of the model.
     模型输出
短句来源
     HIGH PRESSURE HEAT EXCHANGER
     高压换热器
短句来源
     Discussion about the Brand Output
     谈品牌输出
短句来源
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  high voltage output
High voltage output stimulation is recommended to observe diaphragmatic stimulation.
      
It is not the only method of controlling the high voltage output, however.
      
This divider was needed in order to produce a low-level analog of the high voltage output for control purposes.
      
The high voltage output stage also provides feedback and monitoring signals which will be processed by the power supply control circuits.
      
The output of the detector would be an error signal which would be filtered and used to control the high voltage output.
      
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A basic principle of spiral strip line generator (SSLG) for obtaining millimicrose-cond pulsed high voltage is described. Design method of SSLG with a short switch is given. The SSLG's inner end is the high -voltage output end, and its outer end is grounded. The working parameters and main geometrie sizes of SSLG designed for portable X-ray generator, are also given. Fabricating technology of SSLG is described in detail. Electrical properties of the generator are investigated experimentally. The generator, when...

A basic principle of spiral strip line generator (SSLG) for obtaining millimicrose-cond pulsed high voltage is described. Design method of SSLG with a short switch is given. The SSLG's inner end is the high -voltage output end, and its outer end is grounded. The working parameters and main geometrie sizes of SSLG designed for portable X-ray generator, are also given. Fabricating technology of SSLG is described in detail. Electrical properties of the generator are investigated experimentally. The generator, when connected with X-ray tube, can yield 40-70μR of X-ray radiation at 1 m from outpur-window of the X-ray tube.

本文叙述了能产生毫微秒脉冲高压的螺旋形带状线发生器(以下简称SSLG)的基本原理,给出了具有一个短路开关,内端为高压输出端,外端接地的SSLG的设计方法,并提供了为便携式X光发生器设计的SSLG的制作工艺。对该发生器电性能的实验研究表明:该发生器能输出脉宽40—100ns、电压100kV的高压脉冲,接上X光管负载时,在距X光管输出窗1m处能得到40—70μR的X光辐照量。

This paper investigates the high voltage output transformers experimentally, which are used widly in selfdriven switehing power in displays. The maina factors of key technology for QC are discussed. An approaeh to minimize the transformer using new amorphous and ultrafine crystalline magnetic materals is presented.

本文介绍了目前在显示器中广泛采用的自激式开关电源高压输出变压器质量控制的诸关键工艺要素。讨论了采用新型非晶态、超微晶磁性材料实现变压器小型化的途径。

LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC). In this paper a theoretic analysis and computer simulation to LDMOSFET in RESURF structure were carried out. In order to find the design rules amd the compatible processing with bipolar devices, testing drvices of LDMOSFET in RESURF structure with different length of drift region were designed combined with NPN and PNP transistors. After processing a LDMOSFET...

LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC). In this paper a theoretic analysis and computer simulation to LDMOSFET in RESURF structure were carried out. In order to find the design rules amd the compatible processing with bipolar devices, testing drvices of LDMOSFET in RESURF structure with different length of drift region were designed combined with NPN and PNP transistors. After processing a LDMOSFET in RESURF structure with 350V breakdown voltage was obtained and was compatible with low vlotage bipolar transistors.

RESURF(减小表面电场)结构的LDMOSFET(水平沟道二次扩散MOS场效应晶体管)是HVIC(高压集成电路)中较为理想的高压输出器件。本文对RESURF结构的LDMOSFET进行了理论与计算机分析,为探求该器件的设计依据及其与双极器件相兼容的工艺方案,设计了一个包含有NPN,PNP晶体管及不同漂移区长度的RESURF试验模型,并进行了工艺流片,获得了耐压为350V与低压双极器件相兼容的高压RESURF结构的LDMOSFET。

 
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