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直接刻蚀
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  direct etching
     Investigation of UV Laser Direct Etching on InP Material
     InP材料UV激光直接刻蚀研究
短句来源
     An investigation of direct etching on semiconductor InP by UV laser APD effect has been made and a good result was achieved.
     利用UV激光的光解剥离(APD)效应,对半导体材料InP进行了直接刻蚀研究,获得了良好的结果。
短句来源
     A Quality Analysis of Direct Etching with an Excimer Laser
     激光直接刻蚀图形的质量分析
短句来源
     Micromachining of Monocrystal Silicon by Excimer Laser Direct Etching
     准分子激光直接刻蚀单晶硅研究
短句来源
     Excimer laser electrochemical etching process is a combination of excimer laser direct etching and electrochemical etching.
     准分子激光电化学刻蚀工艺是一种将准分子激光直接刻蚀和电化学刻蚀相结合而形成的新工艺。
短句来源
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  “直接刻蚀”译为未确定词的双语例句
     Etching of Semiconductor InP by APD of Direct Eximer Laser
     准分子激光直接刻蚀InP半导体材料
短句来源
     In the process of the fabrication of Au/AuGeNi-GaAs ohmic contact, a dark-brown layer appears frequently when Au/AuGeNi is chemically etched.
     Au/AuGeNi-GaAs欧姆接触工艺中,直接刻蚀Au/AuGeNi往往会出现一褐色层.
短句来源
     The technology of direct and induced etching of Al, Au with excimer laser is reported in this paper. The functional relations between laser energy density,etching rate and pressure of reaction gas are given. And the mechanism of the etching of metals by excimer laser is discussed.
     本文报导了准分子激光对Al、Au等金属的直接刻蚀和诱导刻蚀技术,给出了刻蚀过程中激光能量密度、刻蚀速率及反应气体压力之间的关系,分析讨论了准分子激光对Al、Au的刻蚀机理和规律。
短句来源
     This paper introduces the manufacturing technique of zero thickness grating,specially explains the procedure of electrical chemical method to etch the high density orthogonal zero thickness grating.
     介绍了零厚度光栅制作方法,其中重点是用电化学刻栅法在高温合金材料试件表面直接刻蚀高密度正交零厚度光栅。
短句来源
     Abstract μm InGaAsP/InP strained Multi Quantum Well DFB Lasers with complex coupled grating formed by etching through the top 3 ̄4 QWs of active region are reported. The laser structure is grown by all MOVPE and subsequently processed into PBH LD devices. The threshold current is 10mA.
     本文在国内首次报道了采用直接刻蚀有源区技术在应变多量子阱有源区结构基础上制作了1.3μmInGaAsP/InP部分增益耦合DFB激光器,器件采用全MOVPE生长,阈值电流10mA,边模抑制比(SMSR)大于35dB,在端面未镀膜情况下器件单纵模成品率较高
短句来源
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  相似匹配句对
     A Quality Analysis of Direct Etching with an Excimer Laser
     激光直接刻蚀图形的质量分析
短句来源
     Micromachining of Monocrystal Silicon by Excimer Laser Direct Etching
     准分子激光直接刻蚀单晶硅研究
短句来源
     Ion Beam Etching
     离子束刻蚀
短句来源
     kill directly the tumor cells;
     直接杀伤;
短句来源
     Plasma Etching
     等离子体刻蚀
短句来源
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  direct etching
This process leads to direct etching of the polymer.
      
Photostimulated direct etching of GaN has been demonstrated with extremely high etching rate up to 135?nm/pulse.
      
This system produces microscopic laser beams able to pattern gratings on the surface of various materials in the micrometer range by direct etching.
      
Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
      


In the process of the fabrication of Au/AuGeNi-GaAs ohmic contact, a dark-brown layer appears frequently when Au/AuGeNi is chemically etched. In this paper the composition of the dark-brown layer is analysed with AES and ESCA and the specific contact resistance has also been measured.

Au/AuGeNi-GaAs欧姆接触工艺中,直接刻蚀Au/AuGeNi往往会出现一褐色层.本文叙述了对这一褐色层进行俄歇电子能谱学(AES)和化学分析电子能谱学(ESCA)研究结果.测定了比接触电阻.

An investigation of direct etching on semiconductor InP by UV laser APD effect has been made and a good result was achieved. The experimental APD fluency threshold is about 390 mJ/cm~2 by an XeCl excimer laser with a wavelength of 308 nm and a pulse width of 20 ns. Compared with the theoretical results, they are coincident well with each other. Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.

利用UV激光的光解剥离(APD)效应,对半导体材料InP进行了直接刻蚀研究,获得了良好的结果。采用波长为308nm,光脉冲宽度20ns的XeCl)准分子激光器,APD刻蚀的光能量密度阈值为390mJ/cm~2;与理论结果相比较,两者具有良好的一致性。同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。

The technology of direct and induced etching of Al, Au with excimer laser is reported in this paper. The functional relations between laser energy density,etching rate and pressure of reaction gas are given. And the mechanism of the etching of metals by excimer laser is discussed.

本文报导了准分子激光对Al、Au等金属的直接刻蚀和诱导刻蚀技术,给出了刻蚀过程中激光能量密度、刻蚀速率及反应气体压力之间的关系,分析讨论了准分子激光对Al、Au的刻蚀机理和规律。

 
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