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电荷储存
相关语句
  charge storage
     Investigation of Charge Storage Properties in V_2O_5 Thin Films
     V_2O_5薄膜电荷储存特性研究
短句来源
     The Stability of Charge Storage and Property of Charge Transport of Si_3N_4/SiO_2 Double Layer Electret Based on Si Substrate
     Si基Si_3N_4/SiO_2双层驻极体薄膜的电荷储存稳定性和电荷输运特性
短句来源
     CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si_3N_4/SiO_2 ELECTRET FILM BASED ON Si SUBSTRATE
     Si基Si_3N_4/SiO_2双层膜驻极体的电荷储存与输运
短句来源
     Influence of Thickness on the Charge Storage Stability for Porous PTFE/PE/PP Film Electrets
     厚度对多孔PTFE/PE/PP驻极体电荷储存稳定性的影响
     Charge storage stability of the porous SiO_2 thin film electret based on Si substrate
     Si基多孔SiO_2薄膜驻极体电荷储存稳定性
短句来源
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  “电荷储存”译为未确定词的双语例句
     TheexperimentalresultsshowthestabilityofchargestorageinSi3 N4 /SiO2 doublelayerelectretlayerismuchbetterthanthatof singleoneanditschargelifeisabouttwoordersofmagnitudeofthatofsingleone .
     实验结果表明 ,Si3 N4 /SiO2 双层膜具有比单层膜更优异的电荷储存稳定性 ,Si3 N4 /SiO2 双层膜系统的电荷寿命比SiO2 驻极体约高两个数量级。
短句来源
     Silicon nitride/silicon dioxide (Si_3N_4/SiO_2) double layer electret films, based on silicon substrate, are made
     通过平面工艺和微机械加工技术将硅基Si_3N_4/SiO_2双层驻极体膜制作成2mm×2mm的小片,通过电晕充电及等温表面电位衰减测量,考察了微型化对材料的电荷储存稳定性的影响。
     For HMDS (hexamethyedisilane) and DCDMS (dichlorodimeth siliane) chemical surface modification, the stability of silicon nitride (Si 3N 4) single layer and silicon nitride/silicon dioxide(Si 3N 4/SiO 2) double layer electrets charged with constant voltage corona were compared by compensation method.
     采用补偿法对六甲基二硅胺烷 (hexamethyedisilane ,HMDS)和二氯二甲基硅烷 (dichlorodimethsiliane ,DCDMS)化学表面修正恒压电晕充电硅基氮化硅 (Si3N4)薄膜驻极体及氮化硅 /二氧化硅 (Si3N4/SiO2 )薄膜驻极体的电荷储存稳定性进行了比较性的研究 .
短句来源
     Aselectretmembranesinelectretsensors ,Si3 N4 /SiO2 doublelayerscouldleadtocompensatetensile stressforcompressivestressesencounteredinsinglelayersofSi3 N4 andSiO2 .Inthispaper ,thechargestorageandtransportpropertiesare discussed .
     利用氮化硅薄膜的高张应力研制成氮化硅 /二氧化硅 (Si3 N4 /SiO2 )双层膜 ,可使其内应力相互补偿。 本文讨论了双层膜驻极体的电荷储存稳定性及电荷输运特性。
短句来源
     Firstly, the electret properties of virginal cellular PP (PQ50) films were systematically studied by measuring the open-circuit thermally stimulated discharge (TSD) current spectra and charge TSD spectra.
     本文首先通过热刺激放电(Thermally Stimulated Discharge,TSD)电流、原位实时电荷TSD和电荷等温衰减的测量,系统地研究了商用PP合成纸(国产PQ50型)原膜的驻极特性,分析了其电荷储存机制。
短句来源
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  相似匹配句对
     The charge storage stability of porous polytetrafluoroethy lene film electret
     聚四氟乙烯多孔薄膜驻极体的电荷储存稳定性
短句来源
     Preparation and Charge Storage Characteristics of Silicon Nanoparticles
     硅纳米晶的制备和电荷储存特性
短句来源
     On Natural Gas's Storage
     天然气的储存
短句来源
     Storage of Natural Gas
     天然气的储存
短句来源
     Charge Pump Random-Access Memory
     电荷泵随机存储器
短句来源
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  charge storage
The influence of environmental humidity on the stability of spatial charge storage in polyimide films has been studied.
      
The paper shows the charge storage behavior of short psn-silicon diodes under the condition of quasi-stationary equilibrium.
      
The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology.
      
In this experiment we have injected charge into the SiO2 and investigated the nature of charge storage at the SiO2/Si interface.
      
The extraordinary stability and cycle life performance of today's electrochemical double-layer capacitors (EDLCs) are generally ascribed to the fact that charge storage in activated carbon (AC) is based on pure double-layer charging.
      
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In order to carry out a research on the mechanism of charge storage and transmission in thin polymer electrets, it is highly desirable to know the information about the distribution of charges in electrets.The thermal pulse technique introduced in this paper, originally proposed by R. E. Collins in 1975, is able to determine the total charge and its mean position in one-sided metallized thin polymer electret. As long as changes of voltage on the surface of the equivalent electret are measured during and after...

In order to carry out a research on the mechanism of charge storage and transmission in thin polymer electrets, it is highly desirable to know the information about the distribution of charges in electrets.The thermal pulse technique introduced in this paper, originally proposed by R. E. Collins in 1975, is able to determine the total charge and its mean position in one-sided metallized thin polymer electret. As long as changes of voltage on the surface of the equivalent electret are measured during and after the absorption of a transient thermal pulse on one electret surface, the total charge and charge centroid in thin electret are obtained directly with this technique. It is a nondestructive technique for the reason that the amount of heating is very small but produces no alteration in the internal electret charge distribution.In this paper the thermal pulse technique is discussed in detail theoretically and experimentally.

为了研究薄膜驻极体内电荷储存和传输的机理,很需要知道有关驻极体内电荷分布的信息. 本文介绍的热脉冲法,最初R.E.Collins于1975年提出,可以测定单面镀金属膜的驻极体的总电荷量以及它的平均位置.只要驻极体表面在吸收热脉冲的瞬间以及其后,测量出等效表面电压的变化,便可直接算得驻极体的总电荷量及其电荷重心.由于脉冲热量极其微小,不会引起驻极体内部电荷分布的改变,对样品无破坏作用. 本文从理论上和实验上对热脉冲法进行了详细的讨论.

The pyroelectric effect induced due to FE1-FE2 phase transition and the condu-cting behaviour of PZT 95/5 ceramics doped with U_3O_8 were studied.It was shownthat doping U_3O_8 could improve detectivity figure of merit over a wide temperaturerange,and it could act as a donor to make the material have semiconductivity.Thepredication on the conducting mechanism of carrier can be proved to be coincidedwith the experimental result.The activition energy of the carrier localized extra-electrons was obtained.That this...

The pyroelectric effect induced due to FE1-FE2 phase transition and the condu-cting behaviour of PZT 95/5 ceramics doped with U_3O_8 were studied.It was shownthat doping U_3O_8 could improve detectivity figure of merit over a wide temperaturerange,and it could act as a donor to make the material have semiconductivity.Thepredication on the conducting mechanism of carrier can be proved to be coincidedwith the experimental result.The activition energy of the carrier localized extra-electrons was obtained.That this material can store up large quantity of spacecharges was first discovered for application.A semiconducting material with highpyroelectric coefficient,low dielectric constant,low dielectric loss,and suitable tomake pyroelectric detector,was prepared.

本文研究了 U_3O_8掺杂的 PZT 95/5系统多晶固溶体在两个菱方铁电相间相变的热释电性能及材料的电导特性。认为 U_3O_8的加入不仅改善了材料的热释电优值,同时作为一种施主杂质使材料半导化,实验结果证实了载流子的传输机理与假设一致,并求出了载流子的激活能。发现了该材料具有巨大潜在应用前景的电荷储存特性。最后制备了适用于热释电红外探测器的、具有高热释电系数、低介电常数及半导化的铁电相变热释电陶瓷材料。

The polypropylene films are treated with low temperature plasma and the charges are injected into this film under needle-plate electrodes.Varying the temperature of samples,applied voltage and injection time,the optimal condition of charge injection is obtained.The experimental results show that with the plasma treatment, the charge storage capacity of polypropylene film increases 43% and half value temperature of charge thermal stimulation decay raises 8℃. It is proved by infrared spectrum with multiple inner...

The polypropylene films are treated with low temperature plasma and the charges are injected into this film under needle-plate electrodes.Varying the temperature of samples,applied voltage and injection time,the optimal condition of charge injection is obtained.The experimental results show that with the plasma treatment, the charge storage capacity of polypropylene film increases 43% and half value temperature of charge thermal stimulation decay raises 8℃. It is proved by infrared spectrum with multiple inner reflection,second ion mass spectrum and photoconduction measurement that there are more carbonyl groups C=O and double bonds C=C on the sample surface after treatment and the plasma treatment increases the crystallinity of the sample.These polar groups, double bonds and construction defects are considered as the deep traps of charge.

作者以低温等离子体对聚丙烯薄膜进行表面处理,在针对板电极上做了电荷注入试验,改变试样的温度、外施电压和注入时间,研究了试样的电荷注入的最佳条件。试验结果表明,等离子体处理可提高聚丙烯薄膜的电荷储存量43%,电荷的热刺激衰减半值温度8℃,使聚丙烯驻极体的等效表面电荷密度达到特氟隆驻极体的水平,因而对驻极体的生产具有一定的实际意义。红外多次内反射光谱,二次离子质谱和光电导测量证明,聚丙烯薄膜经等离子体处理后,试样表面形成了更多的 C=O 和 C=C 基,提高了聚丙烯的结晶度,极性基团的出现和结构缺陷的增加,形成了电荷的深陷阱。

 
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